Patent US2682063A successfully refreshed from Google Patents.
US2785096A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Manufacture of junction-containing silicon crystals
Assignee: Texas Instruments Inc
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Filing: 1955-05-25
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Granted: 1957-03-12
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Expires: 1975-05-25
Abstract
No abstract record available.
Inventors
- 👤 Willis A Adcock
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 20:23
CPC Classifications
C; C30; C30B; C30B15/00; C30B15/02; C30B15/04; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/919
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
130 words
A METHOD OF MANUFACTURING SILICON CRYSTALS FOR USE IN TRANSISTORS, CRYSTAL DIODES AND THE LIKE THAT COMPRISES GROWING A SILICON CRYSTAL FROM A MOLTEN BATH UNDER CONDITIONS WHICH WILL PRODUCE A FIRST LAYER OF SILICON HAVING N-TYPE CNDUCTIVITY, A SECOND LAYER OF SILICON HAVING PTYPE CONDUCTIVITY AND HAVING A RESISTIVITY OF AT LEAST ABOUT 1.5 OHM-CENTIMETERS, AND A THIRD LAYER OF SILICON HAVING THE SAME KIND OF CONDUCTIVITY AS THE SECOND LAYER, BUT HAVING A RESISTIVITY SUBSTANTIALLY LOWER THAN THE SECOND LAYER, AND SUBSEQUENTLY HEATING THE CRYSTAL CONTAINING THE THREE LAYERS AT A TEMPERATURE OF FROM 300*C. TO 450* C. AND FOR A PERIOD OF TIME SUFFICIENT TO EFFECT THE CONVERSION OF THE SECOND LAYER OF SILICON TO AN INTRINSIC STATE HAVING A SUBSTANTIALLY HIGHER RESISTIVITY THAN IT ORIGINALLY HAD.
Claim 2
Independent Claim
130 words
A METHOD OF MANUFACTURING SILICON CRYSTALS FOR USE IN TRANSISTORS, CRYSTAL DIODES AND THE LIKE THAT COMPRISES GROWING A SILICON CRYSTAL FROM A MOLTEN BATH UNDER CONDITIONS WHICH WILL PRODUCE A FIRST LAYER OF SILICON HAVING N-TYPE CNDUCTIVITY, A SECOND LAYER OF SILICON HAVING PTYPE CONDUCTIVITY AND HAVING A RESISTIVITY OF AT LEAST ABOUT 1.5 OHM-CENTIMETERS, AND A THIRD LAYER OF SILICON HAVING THE SAME KIND OF CONDUCTIVITY AS THE SECOND LAYER, BUT HAVING A RESISTIVITY SUBSTANTIALLY LOWER THAN THE SECOND LAYER, AND SUBSEQUENTLY HEATING THE CRYSTAL CONTAINING THE THREE LAYERS AT A TEMPERATURE OF FROM 300*C. TO 450* C. AND FOR A PERIOD OF TIME SUFFICIENT TO EFFECT THE CONVERSION OF THE SECOND LAYER OF SILICON TO AN INTRINSIC STATE HAVING A SUBSTANTIALLY HIGHER RESISTIVITY THAN IT ORIGINALLY HAD.
References Cited (Backward Citations)
US2602763A
Cited
US2701326A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1960-03-11 | 1960-09-10 | 1961-03-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1964-03-11 | 1964-09-10 | 1965-03-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1968-03-11 | 1968-09-10 | 1969-03-12 | $7700.00 | Window Closed / Lapsed |