Patent US2831787A successfully refreshed from Google Patents.
US2831787A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Emeis
Assignee: —
•
Filing: —
•
Granted: 1958-04-22
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Expires: 1975-04-22
Abstract
No abstract record available.
Inventors
No inventors recorded.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 04:16
CPC Classifications
H; H10; H10P; H10P10/00; H10P10/12; H10D; H10D99/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
134 words
IN A METHOD OF MAKING A SILICON DEVICE HAVING RECTIFIER ACTION, WITH A P-N JUNCTION, THE IMPROVEMENT COMPRISING HEATING GERMANIUM IN CONTACT WITH A SEMICONDUCTOR BODY OF SILICON HAVING CONDUCTANCE OF A GIVEN TYPE, THE GERMANIUM BEING DOPED TO PRODUCE CONDUCTANCE TO ANOTHER TYPE, THE HEATING BEING TO A TEMPERATURE HIGHER THAN THE MELTING POINT OF GERMANIUM TO MELT THE LATTER, BUT BELOW THE MELTING POINT OF THE SILICON BODY, PERMITTING THE BODY TO COOL SLOWLY, TO FORM AN OUTER RELATIVELY THINNER ALLOY LAYER OF MIXED CRYSTALS OF GERMANIUM AND SILICON, AND TO PRODUCE AN INTERMEDIATE LAYER OF SILICON HAVING A CONDUCTANCE OTHER THAN SAID GIVEN TYPE, BY ENTRANCE OF DEFECTION ATOMS BY DIFFUSION FROM THE OUTER LAYER, AND AFFIXING AN ELECTRIC CONTACT TERMINAL UPON THE SAID OUTER ALLOY TO PRODUCE A BARRIER-FREE JUNCTION.
Claim 2
Dependent Claim
134 words
IN A METHOD OF MAKING A SILICON DEVICE HAVING RECTIFIER ACTION, WITH A P-N JUNCTION, THE IMPROVEMENT COMPRISING HEATING GERMANIUM IN CONTACT WITH A SEMICONDUCTOR BODY OF SILICON HAVING CONDUCTANCE OF A GIVEN TYPE, THE GERMANIUM BEING DOPED TO PRODUCE CONDUCTANCE TO ANOTHER TYPE, THE HEATING BEING TO A TEMPERATURE HIGHER THAN THE MELTING POINT OF GERMANIUM TO MELT THE LATTER, BUT BELOW THE MELTING POINT OF THE SILICON BODY, PERMITTING THE BODY TO COOL SLOWLY, TO FORM AN OUTER RELATIVELY THINNER ALLOY LAYER OF MIXED CRYSTALS OF GERMANIUM AND SILICON, AND TO PRODUCE AN INTERMEDIATE LAYER OF SILICON HAVING A CONDUCTANCE OTHER THAN SAID GIVEN TYPE, BY ENTRANCE OF DEFECTION ATOMS BY DIFFUSION FROM THE OUTER LAYER, AND AFFIXING AN ELECTRIC CONTACT TERMINAL UPON THE SAID OUTER ALLOY TO PRODUCE A BARRIER-FREE JUNCTION.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1961-04-21 | 1961-10-21 | 1962-04-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1965-04-21 | 1965-10-21 | 1966-04-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1969-04-21 | 1969-10-21 | 1970-04-22 | $7700.00 | Window Closed / Lapsed |