Patent US2763581A successfully refreshed from Google Patents.
US2763581A
Expired / Lapsed
US
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Process of making p-n junction crystals
Assignee: Raytheon Co
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Filing: 1952-11-25
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Granted: 1956-09-18
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Expires: 1972-11-25
Abstract
No abstract record available.
Inventors
- 👤 Freedman George
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 19:33
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y10; Y10S; Y10S148/00; Y10S148/049; Y10S148/072; Y10S148/12; Y10S148/122; Y10S252/00; Y10S252/95; Y10S252/951
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
116 words
THE METHOD OF MAKING SINGLE CRYSTAL JUNCTION CRYSTALS WHICH CONSISTS IN VAPORIZING A P-TYPE SEMICONDUCTOR COMPOUND AND AN N-TYPE SEMICONDUCTOR COMPOUND, PASSING SAID P-TYPE SEMICONDUCTOR COMPOUND IN A GASEOUS STATE ONTO A HEATED SINGLE CRYSTAL MEMBER, DEPOSITING A LAYER OF P-TYPE SEMICONDUCTOR ALLOY ON SAID MEMBER, PASSING SAID N-TYPE SEMICONDUCTOR COMPOUND IN A GASEOUS STATE ONTO SAID MEMBER, DEPOSITING LAYER OF N-TYPE SEMICONDUCTOR ALLOY ON SAID MEMBER IN ALTERNATE STEPS TO FORM A JUNCTION CRYSTAL, INTERRUPTING THE DEPOSITION OF AT LEAST ONE OF SAID LAYERS AT A DESIRED TIME, PLACING AN ELECTRICAL CONDUCTOR IN CONTACT WITH SAID ONE LAYER, AND RESUMING THE DEPOSITION OF ONE LAYER WHEREBY SAID CONDUCTOR IS FIRMLY EMBEDDED WITHIN SAID ONE LAYER.
Claim 2
Independent Claim
116 words
THE METHOD OF MAKING SINGLE CRYSTAL JUNCTION CRYSTALS WHICH CONSISTS IN VAPORIZING A P-TYPE SEMICONDUCTOR COMPOUND AND AN N-TYPE SEMICONDUCTOR COMPOUND, PASSING SAID P-TYPE SEMICONDUCTOR COMPOUND IN A GASEOUS STATE ONTO A HEATED SINGLE CRYSTAL MEMBER, DEPOSITING A LAYER OF P-TYPE SEMICONDUCTOR ALLOY ON SAID MEMBER, PASSING SAID N-TYPE SEMICONDUCTOR COMPOUND IN A GASEOUS STATE ONTO SAID MEMBER, DEPOSITING LAYER OF N-TYPE SEMICONDUCTOR ALLOY ON SAID MEMBER IN ALTERNATE STEPS TO FORM A JUNCTION CRYSTAL, INTERRUPTING THE DEPOSITION OF AT LEAST ONE OF SAID LAYERS AT A DESIRED TIME, PLACING AN ELECTRICAL CONDUCTOR IN CONTACT WITH SAID ONE LAYER, AND RESUMING THE DEPOSITION OF ONE LAYER WHEREBY SAID CONDUCTOR IS FIRMLY EMBEDDED WITHIN SAID ONE LAYER.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1959-09-18 | 1960-03-19 | 1960-09-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1963-09-18 | 1964-03-19 | 1964-09-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1967-09-18 | 1968-03-19 | 1968-09-18 | $7700.00 | Window Closed / Lapsed |