Fused-junction silicon diodes

Claim 1

A FUSED-JUNCTION SILICON DIODE COMPRISING: A SILICON CRYSTAL ELEMENT HAVING AN ACCEPTOR-IMPURITY-DOPED P-TYPE REGION, AN ANTIMONY-DOPED N-TYPE REGION SEPARATED FROM SAID P-TYPE REGION BY A RECTIFYING BARRIER, A LAYER OF ALUMINUM DEPOSITED ON SAID P-TYPE REGION AND IN OHMIC CONTACT THEREWITH, A LAYER OF GOLD DEPOSITED ON SAID LAYER OF ALUMINUM, SAID GOLD LAYER BLENDING WITH SAID ALUMINUM LAYER, AND AN ALLOY BUTTON FUSED TO SAID N-TYPE REGION AND IN OHMIC CONTACT THEREWITH, SAID ALLOY BUTTON INCLUDING SILICON, ANTIMONY, AND GOLD; A FIRST METALLIC ELECTRODE FOR SUPPORTING SAID CRYSTAL ELEMENT, SAID FIRST ELECTRODE HAVING FIRST AND SECOND ENDS; AN INSULATIVE BINDER MECHANICALLY INTERCONNECTING SAID GOLD LAYER WITH SAID FIRST END OF SAID FIRST ELECTRODE, SAID BINDER HAVING GOLD PARTICLES DISPERSED THEREIN TO PROVIDE AN OHMIC CONNECTION BETWEEN SAID FIRST ELECTRODE AND SAID P-TYPE REGION; A VITREOUS TUBULAR ENVELOPE FOR ENCLOSING SAID CRYSTAL ELEMENT, SAID ENVELOPE HAVING FIRST AND SECOND APERTURED ENDS, SAID FIRST ELECTRODE EXTENDING THROUGH THE APERTURE IN SAID FIRST END OF SAID VITREOUS ENVELOPE AND BEING HERMETICALLY SEALED THERETO WHEREBY SAID CRYSTAL ELEMENT IS POSITIONED WITHIN SAID ENVELOPE; A SECOND METALLIC ELECTRODE HAVING FIRST AND SECOND ENDS, SAID SECOND ELECTRODE EXTENDING THROUGH THE APERTURE IN SAID SECOND END OF SAID VITREOUS ENVELOPE AND BEING HERMETICALLY SEALED THERETO WHEREBY THE FIRST END OF SAID SECOND ELECTRODE EXTENDS WITHIN SAID ENVELOPE; AND A RESILIENT METALLIC ELEMENT POSITIONED WITHIN SAID ENVELOPE AND ELECTRICALLY INTERCONNECTING SAID FIRST END OF SAID SECOND ELECTRODE AND SAID ALLOY BUTTON.