Semiconductor element of silicon carbide

Abstract

Abstract PURPOSE:To obtain an SiC element which is operational at high temperature by a method wherein Pt is utilized as a material which is used to form a Schottky junction. CONSTITUTION:A p-type SiC layer 2 formed out of SiH4, C3H5, and B is deposited on an n-type Si substrate 1 through the CVD method. Next, an n-type SiC layer 3 is made to overlap thereon using N2. Ni ohmic electrodes 4 a and 5 are provided onto the layer 3, and a Pt electrode 7 is evaporated at an intermediate point between the electrodes 4 and 5 independently of them. Ni or the like is made to be laminated on the Pt film 6, it necessary. In this constitution, a FET is able to operate at high temperature under a sever condition through a small Schottky junction inverted bias leakage current. Therefore, the FET of this design is used as a high frequency element or a large power element utilized at high temperature.

Inventors

• 👤 Yoshihisa Fujii
• 👤 Akira Suzuki
• 👤 Masaki Furukawa
• 👤 Mitsuhiro Shigeta
• 👤 Atsuko Uemoto

Bibliographic Details