Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent the generation of a leakage current between a source and a drain forming one pair and to enhance the characteristic of a transistor formed in an element region by a method wherein, after an impurity to be used for a channel stopper has been introduced in advance into an insulating film where an opening to be filled with a semiconductor in the element region is formed, said impurity is diffused into said semiconductor from said insulating film and the channel stopper is formed at the interface part with said insulating film in said element region. CONSTITUTION:After B (boron) has been diffused into an n-MOS-formed region at an n<+>-Si substrate 1a, this assembly is oxidized, and an SiO2 insulating film 2 with a thickness of about 1 mum and a p<+> well 7 are formed. Then, after openings 3 and 3a have been formed in the n-MOS-formed region and a p-MOS-formed region by etching the insulating film 2, the openings 3 and 3a are filled by means of the selective epitaxial growth of undoped Si. Then, the assembly is heat-treated. Through this heat treatment, the B (boron) is diffused from an ion-implanted region 8 to an element region 4; a desired p<+> channel stopper 9 is formed at the interface part with the insulating film 2 in the element region 4; in the same manner, a desired n<+> channel stopper 9a is formed at the interface part with the insulating film 2 in the device region 4.

Inventors

• 👤 Junji Sakurai
• 👤 桜井　潤治

Bibliographic Details