Optical switch

Abstract

Abstract PURPOSE:To improve the isolation of an optical switch element which is turned on and off by electric signals, by constituting a semiconductor P-N junction element with specific active layer, carrier shutting layers and clad layers. CONSTITUTION:Carrier shutting layers 9 and 10 which have a band gap energy (about 2eV or more) enough to shut in carriers and have a thickness (about 250-450Angstrom ) enough to prevent the tunnel effect of carriers and consist of N type and P type Ga1-zAlz As are provided in both sides of an active layer 6 consisting of a P type Ga1-yAlyAs, and clad layers 5 and 7 which have a band gap energy lower than that of the active layer 6 and consist of N type and P type Ga1-xAlxAs (an Al content (x) of clad layers is smaller than an Al content (y) of the active layer) are provided in both sides of layers 9 and 10, thus constituting a semiconductor P-N junction element for optical switch (a substrate 4 consists of an N type GaAs and a gap layer 8 consists of a P type GaAs).

Inventors

• 👤 Masahiro Ikeda
• 👤 正宏 池田

Bibliographic Details