Improvements in or relating to resistance devices for generating a hall voltage

Abstract

Abstract 782,774. Semi-conductor devices. SIEMENSSCHUCKERTWERKE AKT.-GES. July 26, 1955 [Aug. 20, 1954], No. 21629/55. Class 37. A Hall effect device comprises a rectangular lamina 1 of length to breadth ratio in the range 1.4 to 3: 1, of a semi-conductor compound of the type A III B V , preferably In As, with a carrier mobility greater than 6000 cm.<SP>2</SP> volt.<SP>-1</SP> sec.<SP>-1</SP>, with laminar current electrodes 2, 3 extending the full length of the short edges of the lamina, and Hall voltage electrodes 6, 7 on the longer edges of the lamina. The latter electrodes are of point contact form, or preferably, as shown, are laminµ in contact over about 1/ 10 of the length of the respective edges, and the Hall voltage may be fed to a relay or magnetic amplifier.

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