US6401580B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for sawing wafers employing multiple indexing techniques for multiple die dimensions
Assignee: Micron Technology Inc
•
Filing: 2000-05-09
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Granted: 2002-06-11
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Expires: 2020-05-09
Abstract
Abstract A semiconductor wafer saw and method of using the same for dicing semiconductor wafers comprising a wafer saw including variable lateral indexing capabilities and multiple blades. The wafer saw, because of its variable indexing capabilities, can dice wafers having a plurality of differently sized semiconductor devices thereon into their respective discrete components. In addition, the wafer saw with its multiple blades, some of which may be independently laterally or vertically movable relative to other blades, can more efficiently dice silicon wafers into individual semiconductor devices.
Inventors
- 👤 Salman Akram
- 👤 Derek J. Gochnour
- 👤 Michael E. Hess
- 👤 David R. Hembree
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 19:10
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0428; B; B28; B28D; B28D5/00; B28D5/02; B28D5/022; B28D5/024; B28D5/029; Y; Y10; Y10T; Y10T83/00; Y10T83/02; Y10T83/0207; Y10T83/0215; Y10T83/0222; Y10T83/0333; Y10T83/0363; Y10T83/04; Y10T83/0524; Y10T83/768; Y10T83/7684; Y10T83/7722; Y10T83/7726; Y10T83/7809; Y10T83/7868
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
168 words
A method for forming semiconductor components having conductive traces thereon, comprising: providing a substrate including a plurality of columns, each of said columns including at least one semiconductor device component, adjacent columns of said plurality of columns each being separated by a street located therebetween; positioning groups of conductive traces on a surface of said substrate, a first group of said groups of conductive traces extending at least partially over a first column of said plurality of columns and a second group of said groups of conductive traces extending at least partially over a second column of said plurality of columns, said second column being located adjacent to said first column, said first and second groups being connected to a common tie bar, said common tie bar being at least partially located over said street between said adjacent columns; substantially simultaneously severing said common tie bar from said first and second groups of conductive traces; and severing said first and second columns from one another along said street.
Claim 2
Independent Claim
168 words
A method for forming semiconductor components having conductive traces thereon, comprising: providing a substrate including a plurality of columns, each of said columns including at least one semiconductor device component, adjacent columns of said plurality of columns each being separated by a street located therebetween; positioning groups of conductive traces on a surface of said substrate, a first group of said groups of conductive traces extending at least partially over a first column of said plurality of columns and a second group of said groups of conductive traces extending at least partially over a second column of said plurality of columns, said second column being located adjacent to said first column, said first and second groups being connected to a common tie bar, said common tie bar being at least partially located over said street between said adjacent columns; substantially simultaneously severing said common tie bar from said first and second groups of conductive traces; and severing said first and second columns from one another along said street.
Claim 3
Dependent Claim
36 words
The method of claim 1 , wherein said substantially simultaneously severing is effected by cutting through at least a region of each of said first and second groups of conductive traces adjacent said common tie bar.
Claim 4
Dependent Claim
19 words
The method of claim 2 , wherein said substantially simultaneously severing includes cutting at least partially through said substrate.
Claim 5
Dependent Claim
22 words
The method of claim 3 , wherein said cutting at least partially through said substrate comprises scribing a surface of said substrate.
Claim 6
Dependent Claim
27 words
The method of claim 1 , wherein said substantially simultaneously severing said common tie bar and said severing said first and second columns are effected substantially concurrently.
Claim 7
Dependent Claim
17 words
The method of claim 1 , wherein said substantially simultaneously severing is effected with a wafer saw.
Claim 8
Dependent Claim
22 words
The method of claim 6 , wherein said substantially simultaneously severing is effected with a wafer saw including two parallel saw blades.
Claim 9
Dependent Claim
51 words
The method of claim 7 , wherein said severing said first and second columns is effected by laterally moving at least one of said two parallel saw blades to a position aligned with said street and raising the other of said two parallel saw blades out of contact with said substrate.
Claim 10
Dependent Claim
25 words
The method of claim 1 , wherein said positioning groups of conductive traces comprises forming said groups of conductive traces on said substrate by electrodeposition.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-06-10 | 2005-12-10 | 2006-06-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-06-10 | 2009-12-10 | 2010-06-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-06-10 | 2013-12-10 | 2014-06-11 | $7700.00 | Window Closed / Lapsed |