Patent US5902229A successfully refreshed from Google Patents.
US6159836A
Expired / Lapsed
US
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Method for forming programmable contact structure
Assignee: STMicroelectronics lnc USA
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Filing: 1995-05-08
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Granted: 2000-12-12
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Expires: 2015-05-08
Abstract
Abstract A programmable semiconductor contact structure and method are provided. A semiconductor substrate has a first patterned conductive layer for forming an interconnect. A first insulating layer overlies the first patterned conductive layer. An opening is formed through the insulating layer to the first patterned conductive layer to form the contact via. A buffer layer overlies portions of the first insulating layer and covers the opening. A second conductive layer overlies the buffer layer. A third conductive layer then overlies the integrated circuit. The buffer layer is a material, such as amorphous silicon, which functions as an anti-fuse and can be programmed by application of a relatively high programming voltage.
Inventors
- 👤 Che-Chia Wei
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 13:46
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
135 words
A method for forming an integrated circuit contact structure, comprising the steps of: forming an insulating layer over a first patterned metal interconnect layer; forming an opening through the insulating layer to expose a portion of the first patterned metal interconnect layer; forming a first conductive layer including a refractory metal material over the insulating layer and in the opening; forming a low conductivity silicon layer over the first conductive layer; forming a second conductive layer over the low conductivity silicon layer; patterning the first and second conductive layers, and the low conductivity silicon layer, to form a programmable contact within the opening, the contact having side walls; forming insulating sidewall spacers surrounding the programmable contact; and forming a second metal interconnect layer over the programmable contact and in contact with the second conductive layer.
Claim 2
Independent Claim
135 words
A method for forming an integrated circuit contact structure, comprising the steps of: forming an insulating layer over a first patterned metal interconnect layer; forming an opening through the insulating layer to expose a portion of the first patterned metal interconnect layer; forming a first conductive layer including a refractory metal material over the insulating layer and in the opening; forming a low conductivity silicon layer over the first conductive layer; forming a second conductive layer over the low conductivity silicon layer; patterning the first and second conductive layers, and the low conductivity silicon layer, to form a programmable contact within the opening, the contact having side walls; forming insulating sidewall spacers surrounding the programmable contact; and forming a second metal interconnect layer over the programmable contact and in contact with the second conductive layer.
Claim 3
Dependent Claim
16 words
The method of claim 1, wherein the first and second barrier layers comprise deposited titanium nitride.
Claim 4
Dependent Claim
14 words
The method of claim 1, wherein the low conductivity silicon layer comprises amorphous silicon.
Claim 5
Dependent Claim
46 words
The method of claim 1, wherein the step of forming insulating sidewalls comprises the steps of: depositing an oxide layer over the programmable contact and the insulating layer; and anisotropically etching back the oxide layer to leave insulating sidewalls alongside vertical portions of the programmable contact.
Claim 6
Dependent Claim
13 words
The method of claim 1, wherein the insulating layer is formed from oxide.
Claim 7
Dependent Claim
18 words
The method of claim 1, wherein the first and second patterned metal interconnect layers are formed from aluminum.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-12-12 | 2004-06-12 | 2004-12-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-12-12 | 2008-06-12 | 2008-12-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-12-12 | 2012-06-12 | 2012-12-12 | $7700.00 | Window Closed / Lapsed |