US6018485A
Expired / Lapsed
US
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Semiconductor memory device with cascaded burn-in test capability
Assignee: Samsung Electronics Co Ltd
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Filing: 1998-12-28
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Granted: 2000-01-25
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Expires: 2018-12-28
Abstract
Abstract A semiconductor memory device with a cascaded burn-in test capability for a plurality of memory cell blocks. A delayed feedback signal is communicated between memory cell block selection circuits to create the cascade burn-in.
Inventors
- 👤 Gi-Won Cha
- 👤 Jae-Youn Youn
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 15:10
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/04; G11C29/50; G11C29/006; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
74 words
A semiconductor memory device including an address buffer, and first and second memory cell blocks in a memory cell array, comprising: a first block selection circuit selecting the first memory cell block during a burn-in test, and generating a burn-in signal; a delay circuit generating a delayed feedback signal in response to the burn-in signal; and, a second block selection circuit selecting the second memory cell block in response to the delayed feedback signal.
Claim 2
Dependent Claim
74 words
A semiconductor memory device including an address buffer, and first and second memory cell blocks in a memory cell array, comprising: a first block selection circuit selecting the first memory cell block during a burn-in test, and generating a burn-in signal; a delay circuit generating a delayed feedback signal in response to the burn-in signal; and, a second block selection circuit selecting the second memory cell block in response to the delayed feedback signal.
Claim 3
Dependent Claim
96 words
The semiconductor memory device of claim 1, wherein the first block selection circuit comprises: a first block decoder receiving an address signal from the address buffer and a burn-in test initiation signal, and generating a first memory cell block selection signal in response to the address signal and the burn-in test initiation signal; a first main word line decoder, and a first section word line decoder, wherein the first block decoder, the first main word line decoder, and the first section word line decoder cooperate to select the first memory cell block during the burn-in test.
Claim 4
Dependent Claim
19 words
The semiconductor memory device of claim 2, wherein an output of the first block decoder forms the burn-in signal.
Claim 5
Dependent Claim
21 words
The semiconductor memory device of claim 2, wherein an output of the first main word line decoder forms the burn-in signal.
Claim 6
Dependent Claim
86 words
The semiconductor memory device of claim 2, wherein the second block selection circuit comprises: a second block decoder receiving the delayed feedback signal from the delay circuit and generating a second memory cell block selection signal in response to the delayed feedback signal; a second main word line decoder, and a second section word line decoder, wherein the second block decoder, the second main word line decoder, and the second section word line decoder cooperate to select the second memory cell block during the burn-in test.
Claim 7
Dependent Claim
50 words
The semiconductor memory device of claim 5, wherein the second block decoder also receives the address signal from the address buffer and the burn-in initiation signal, and generates the second memory cell block selection signal in response to the delayed feedback signal, the address signal, and the burn-in imitation signal.
Claim 8
Independent Claim
105 words
A method of performing a burn-in test during the wafer stage of a semiconductor memory device fabrication process, the semiconductor memory device comprising an address buffer, and first and second memory cell blocks of a memory cell array, and the method comprising the steps of: selecting the first memory cell block in response to an address signal from the address buffer and a burn-in initiation signal; forming a delayed feedback signal in response to the step of selecting the first memory cell block; and, selecting the second memory cell block in response to the delayed feedback signal, the address signal, and the burn-in initiation signal.
Claim 9
Independent Claim
105 words
A method of performing a burn-in test during the wafer stage of a semiconductor memory device fabrication process, the semiconductor memory device comprising an address buffer, and first and second memory cell blocks of a memory cell array, and the method comprising the steps of: selecting the first memory cell block in response to an address signal from the address buffer and a burn-in initiation signal; forming a delayed feedback signal in response to the step of selecting the first memory cell block; and, selecting the second memory cell block in response to the delayed feedback signal, the address signal, and the burn-in initiation signal.
Claim 10
Independent Claim
92 words
A method of performing a burn-in test during the wafer stage of a semiconductor memory device fabrication process, the semiconductor memory device comprising a plurality of memory cell blocks, each memory cell block in the plurality of cell blocks having associated with it a selection circuit, the method comprising the steps of: selecting one memory cell block using its associated selection circuit; forming a delayed feedback signal in response to the selection of the one memory cell block; and, selecting another memory cell block in sequence responsive to the delayed feedback signal.
Claim 11
Independent Claim
92 words
A method of performing a burn-in test during the wafer stage of a semiconductor memory device fabrication process, the semiconductor memory device comprising a plurality of memory cell blocks, each memory cell block in the plurality of cell blocks having associated with it a selection circuit, the method comprising the steps of: selecting one memory cell block using its associated selection circuit; forming a delayed feedback signal in response to the selection of the one memory cell block; and, selecting another memory cell block in sequence responsive to the delayed feedback signal.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-01-24 | 2003-07-26 | 2004-01-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-01-24 | 2007-07-26 | 2008-01-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-01-24 | 2011-07-26 | 2012-01-25 | $7700.00 | Window Closed / Lapsed |