US5718813A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Enhanced reactive DC sputtering system
Assignee: Advanced Energy Industries Inc
•
Filing: 1993-04-02
•
Granted: 1998-02-17
•
Expires: 2013-04-02
Abstract
Abstract An enhanced reactive plasma processing method and system useful for deposition of highly insulating films. A variety of alternative embodiments are allowed for varying applications. In one embodiment, a tapped inductor is switched to ground or some common level to achieve substantial voltage reversal of about 10% upon detection of an arc condition. This reversal of voltage is maintained long enough to either afford processing advantages or to allow restoration of uniform charge density within the plasma prior to restoration of the initial driving condition. A technique for preventing arc discharges involving periodically either interrupting the supply of power or reversing voltage is effected through a timer system in the power source.
Inventors
- 👤 Geoffrey N. Drummond
- 👤 Richard A. Scholl
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 15:36
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/34; H01J2237/00; H01J2237/004; H01J2237/0041; H01J2237/0044; H01J2237/02; H01J2237/0203; H01J2237/0206
Claims Analysis
Total Claims: 55
Claim 1
Independent Claim
136 words
A method of reactive sputtering comprising the steps of: a. supplying a material target to expose coating material within a coating chamber; b. supplying at least one reactive gas within said coating chamber wherein said gas reacts with said coating material to form electrically insulating material; c. furnishing direct current power to said coating chamber to create a plasma composed of charged particles; d. causing deposition of at least some of said electrically insulating material upon a substrate through action of said plasma; e. clearing an uneven buildup of charged particles within said chamber so as to avoid potential arcing conditions in the first place wherein said step of clearing an uneven buildup of charged particles occurs for a time which does not extinguish said plasma; and then f. continuing to cause deposition upon said substrate.
Claim 2
Independent Claim
136 words
A method of reactive sputtering comprising the steps of: a. supplying a material target to expose coating material within a coating chamber; b. supplying at least one reactive gas within said coating chamber wherein said gas reacts with said coating material to form electrically insulating material; c. furnishing direct current power to said coating chamber to create a plasma composed of charged particles; d. causing deposition of at least some of said electrically insulating material upon a substrate through action of said plasma; e. clearing an uneven buildup of charged particles within said chamber so as to avoid potential arcing conditions in the first place wherein said step of clearing an uneven buildup of charged particles occurs for a time which does not extinguish said plasma; and then f. continuing to cause deposition upon said substrate.
Claim 3
Dependent Claim
33 words
A method of reactive sputtering as described in claim 1 wherein said step of clearing an uneven buildup of charged particles is accomplished from approximately every 10 microseconds to approximately every 2000 microseconds.
Claim 4
Independent Claim
135 words
A method of reactive sputtering comprising the steps of: a. supplying a material target to expose coating material within a coating chamber; b. supplying at least one reactive gas within said coating chamber wherein said gas reacts with said coating material to form electrically insulating material; c. furnishing direct current power by applying a voltage within said coating chamber to create a plasma composed of charged particles; d. causing deposition of at least some of said electrically insulating material upon a substrate through action of said plasma; and e. reversing said voltage so as to avoid potential arcing conditions in the first place during said deposition wherein said step of reversing said direct current power occurs for a time which does not extinguish said plasma; and then f. continuing to cause deposition upon said substrate.
Claim 5
Independent Claim
135 words
A method of reactive sputtering comprising the steps of: a. supplying a material target to expose coating material within a coating chamber; b. supplying at least one reactive gas within said coating chamber wherein said gas reacts with said coating material to form electrically insulating material; c. furnishing direct current power by applying a voltage within said coating chamber to create a plasma composed of charged particles; d. causing deposition of at least some of said electrically insulating material upon a substrate through action of said plasma; and e. reversing said voltage so as to avoid potential arcing conditions in the first place during said deposition wherein said step of reversing said direct current power occurs for a time which does not extinguish said plasma; and then f. continuing to cause deposition upon said substrate.
Claim 6
Dependent Claim
54 words
A method of reactive sputtering as described in claim 3 wherein said voltage which is applied within said chamber has a normal operating level and wherein said step of reversing said voltage comprises the step of applying a reverse voltage at a level of between 5 and 20 percent of the normal operating level.
Claim 7
Dependent Claim
52 words
A method of reactive sputtering as described in claim 3 wherein said coating chamber is maintained at a voltage level and wherein said step of reversing said voltage comprises the step of applying a reverse voltage of between 10 and 100 volts with respect to the voltage level of said coating chamber.
Claim 8
Dependent Claim
29 words
A method of reactive sputtering as described in claim 3 or 5 wherein said step of reversing said voltage occurs for a time which does not extinguish said plasma.
Claim 9
Dependent Claim
29 words
A method of reactive sputtering as described in claim 3 wherein said step of reversing said voltage is accomplished from approximately every 10 microseconds to approximately every 2000 microseconds.
Claim 10
Dependent Claim
30 words
A method of reactive sputtering as described in claim 3 wherein said step of reversing said voltage occurs for a time of from approximately 1 microsecond to approximately 10 microseconds.
Claim 11
Dependent Claim
29 words
A method of reactive sputtering as described in claim 8 wherein said step of reversing said voltage is accomplished from approximately every 10 microseconds to approximately every 2000 microseconds.
Claim 12
Independent Claim
134 words
A method of reactive sputtering comprising the steps of: a. supplying a material target to expose coating material within a coating chamber; b. supplying at least one reactive gas within said coating chamber wherein said gas reacts with said coating material to form electrically insulating material; c. furnishing direct current power by applying a voltage within said coating chamber to create a plasma composed of charged particles; d. causing deposition of at least some of said electrically insulating material upon a substrate through action of said plasma; and e. interrupting said direct current power so as to avoid potential arcing conditions in the first place wherein said step of interrupting said direct current power occurs for a time which does not extinguish said plasma; and then f. continuing to cause deposition upon said substrate.
Claim 13
Independent Claim
134 words
A method of reactive sputtering comprising the steps of: a. supplying a material target to expose coating material within a coating chamber; b. supplying at least one reactive gas within said coating chamber wherein said gas reacts with said coating material to form electrically insulating material; c. furnishing direct current power by applying a voltage within said coating chamber to create a plasma composed of charged particles; d. causing deposition of at least some of said electrically insulating material upon a substrate through action of said plasma; and e. interrupting said direct current power so as to avoid potential arcing conditions in the first place wherein said step of interrupting said direct current power occurs for a time which does not extinguish said plasma; and then f. continuing to cause deposition upon said substrate.
Claim 14
Dependent Claim
31 words
A method of reactive sputtering as described in claim 10 wherein said step of interrupting said direct current power is accomplished from approximately every 10 microseconds to approximately every 2000 microseconds.
Claim 15
Dependent Claim
32 words
A method of reactive sputtering as described in claim 10 wherein said step of interrupting said direct current power occurs for a time of from approximately 1 microsecond to approximately 10 microseconds.
Claim 16
Dependent Claim
31 words
A method of reactive sputtering as described in claim 12 wherein said step of interrupting said direct current power is accomplished from approximately every 10 microseconds to approximately every 2000 microseconds.
Claim 17
Dependent Claim
132 words
A reactive plasma sputtering system comprising: a. a coating chamber; b. a material target disposed to expose coating material within said chamber; c. a reactive gas supply connected to said coating chamber wherein said gas reacts with said coating material to form electrically insulating material; d. an anode positioned within said coating chamber in proximity to said material target; e. a DC power source having a first lead connected to said material target and a second lead connected to said anode; f. an inductor means connected in series along said first lead and having first and second inductor portions wherein said first and second portions are magnetically coupled; and g. a switch connected from said second lead to said first lead at a point in between said first and second inductor portions.
Claim 18
Dependent Claim
132 words
A reactive plasma sputtering system comprising: a. a coating chamber; b. a material target disposed to expose coating material within said chamber; c. a reactive gas supply connected to said coating chamber wherein said gas reacts with said coating material to form electrically insulating material; d. an anode positioned within said coating chamber in proximity to said material target; e. a DC power source having a first lead connected to said material target and a second lead connected to said anode; f. an inductor means connected in series along said first lead and having first and second inductor portions wherein said first and second portions are magnetically coupled; and g. a switch connected from said second lead to said first lead at a point in between said first and second inductor portions.
Claim 19
Dependent Claim
17 words
A reactive plasma sputtering system as described in claim 14 wherein said first inductor portion is large.
Claim 20
Dependent Claim
49 words
A reactive plasma sputtering system as described in claim 15 wherein said first inductor portion and said second inductor portion define a turns ratio with respect to each other and wherein the turns ratio of said second inductor portion to said first inductor portion is at least about 10%.
Claim 21
Dependent Claim
49 words
A reactive plasma sputtering system as described in claim 14 wherein said first inductor portion and said second inductor portion define a turns ratio with respect to each other and wherein the turns ratio of said second inductor portion to said first inductor portion is at least about 10%.
Claim 22
Dependent Claim
26 words
A reactive plasma sputtering system as described in claim 14, 17, or 16 and further comprising a sensor wherein said switch is responsive to said sensor.
Claim 23
Dependent Claim
27 words
A reactive plasma sputtering system as described in claim 18 wherein said DC power source has an output voltage and wherein said sensor detects said output voltage.
Claim 24
Dependent Claim
32 words
A reactive plasma sputtering system as described in claim 18 wherein said DC power source causes an output voltage and wherein said sensor detects a rate of change in said output voltage.
Claim 25
Dependent Claim
18 words
A reactive plasma sputtering system as described in claim 20 wherein said sensor also detects said output voltage.
Claim 26
Dependent Claim
24 words
A reactive plasma sputtering system as described in claim 14 and further comprising timer circuitry wherein said switch is responsive to said timer circuitry.
Claim 27
Dependent Claim
29 words
A reactive plasma sputtering system as described in claim 22 wherein said timer circuitry causes said switch to activate from approximately every 10 microseconds to approximately every 2000 microseconds.
Claim 28
Dependent Claim
25 words
A reactive plasma sputtering system as described in claim 22 wherein said timer circuitry engages said switch for approximately 1 microsecond to approximately 10 microseconds.
Claim 29
Dependent Claim
29 words
A reactive plasma sputtering system as described in claim 24 wherein said timer circuitry causes said switch to activate from approximately every 10 microseconds to approximately every 2000 microseconds.
Claim 30
Dependent Claim
121 words
A reactive plasma sputtering system comprising: a. a coating chamber; b. a material target disposed to expose coating material within said chamber; c. a reactive gas supply connected to said coating chamber wherein said gas reacts with said coating material to form electrically insulating material; d. an anode positioned within said coating chamber in proximity to said material target; e. a DC power source which applies an output voltage across said anode and said material target; and f. voltage reversal circuitry which acts so as to avoid potential arcing conditions in the first place during processing and then to automatically resume said processing wherein said voltage reversal circuitry causes a voltage reversal for a time which does not extinguish said plasma.
Claim 31
Dependent Claim
121 words
A reactive plasma sputtering system comprising: a. a coating chamber; b. a material target disposed to expose coating material within said chamber; c. a reactive gas supply connected to said coating chamber wherein said gas reacts with said coating material to form electrically insulating material; d. an anode positioned within said coating chamber in proximity to said material target; e. a DC power source which applies an output voltage across said anode and said material target; and f. voltage reversal circuitry which acts so as to avoid potential arcing conditions in the first place during processing and then to automatically resume said processing wherein said voltage reversal circuitry causes a voltage reversal for a time which does not extinguish said plasma.
Claim 32
Dependent Claim
35 words
A reactive plasma sputtering system as described in claim 26 wherein said voltage reversal circuitry creates a reverse voltage level and wherein said reverse voltage level is at least five percent of said output voltage.
Claim 33
Dependent Claim
32 words
A reactive plasma sputtering system as described in claim 26 wherein said DC power source continuously applies a voltage across said anode and said material target for a continuous deposition time period.
Claim 34
Dependent Claim
25 words
A reactive plasma sputtering system as described in claim 26 and further comprising a sensor wherein said voltage reversal circuitry is responsive to said sensor.
Claim 35
Dependent Claim
22 words
A reactive plasma sputtering system as described in claim 29 wherein said sensor detects said output voltage from said DC power source.
Claim 36
Dependent Claim
27 words
A reactive plasma sputtering system as described in claim 29 wherein said sensor detects a rate of change in the output voltage from said DC power source.
Claim 37
Dependent Claim
23 words
A reactive plasma sputtering system as described in claim 31 wherein said sensor also detects said output voltage from said DC power source.
Claim 38
Dependent Claim
89 words
A reactive plasma sputtering system as described in claim 26 wherein said DC power source has a first lead connected to said material target and a second lead connected to said anode and wherein said voltage reversal circuitry comprises: a. an inductor connected in series along said first lead and having first and second inductor portions wherein said first and second portions are magnetically coupled; and b. a switch connected from said second lead to said first lead at a point in between said first and second inductor portions.
Claim 39
Dependent Claim
28 words
A reactive plasma sputtering system as described in claim 33 wherein said voltage reversal circuitry further comprises a sensor and wherein said switch is responsive to said sensor.
Claim 40
Dependent Claim
22 words
A reactive plasma sputtering system as described in claim 34 wherein said sensor detects said output voltage from said DC power source.
Claim 41
Dependent Claim
27 words
A reactive plasma sputtering system as described in claim 34 wherein said sensor detects a rate of change in the output voltage from said DC power source.
Claim 42
Dependent Claim
23 words
A reactive plasma sputtering system as described in claim 36 wherein said sensor also detects said output voltage from said DC power source.
Claim 43
Dependent Claim
26 words
A reactive plasma sputtering system as described in claim 26 and further comprising timer circuitry wherein said voltage reversal circuitry is responsive to said timer circuitry.
Claim 44
Dependent Claim
31 words
A reactive plasma sputtering system as described in claim 38 wherein said timer circuitry causes said voltage reversal circuitry to activate from approximately every 10 microseconds to approximately every 2000 microseconds.
Claim 45
Dependent Claim
29 words
A reactive plasma sputtering system as described in claim 38 wherein said timer circuitry causes said voltage reversal circuitry to activate for approximately 1 microsecond to approximately 10 microseconds.
Claim 46
Dependent Claim
31 words
A reactive plasma sputtering system as described in claim 40 wherein said timer circuitry causes said voltage reversal circuitry to activate from approximately every 10 microseconds to approximately every 2000 microseconds.
Claim 47
Dependent Claim
51 words
A reactive plasma sputtering system as described in claim 26 wherein said output voltage creates a plasma current, wherein said voltage reversal circuitry creates a reverse voltage level for a reverse voltage time, and wherein said reverse voltage level for said reverse voltage time allow said plasma current to reach zero.
Claim 48
Dependent Claim
110 words
A reactive plasma sputtering system comprising: a. a coating chamber; b. a material target disposed to expose coating material within said chamber; c. a reactive gas supply connected to said coating chamber wherein said gas reacts with said coating material to form electrically insulating material; d. a DC power source wherein which applies direct current power within said coating chamber to cause processing; and e. clearing circuitry which acts to clear an uneven buildup of charged particles so as to avoid potential arcing conditions in the first place during processing, which acts for a time which does not extinguish said plasma, and which then acts to automatically resume said processing.
Claim 49
Dependent Claim
110 words
A reactive plasma sputtering system comprising: a. a coating chamber; b. a material target disposed to expose coating material within said chamber; c. a reactive gas supply connected to said coating chamber wherein said gas reacts with said coating material to form electrically insulating material; d. a DC power source wherein which applies direct current power within said coating chamber to cause processing; and e. clearing circuitry which acts to clear an uneven buildup of charged particles so as to avoid potential arcing conditions in the first place during processing, which acts for a time which does not extinguish said plasma, and which then acts to automatically resume said processing.
Claim 50
Dependent Claim
27 words
A reactive plasma sputtering system as described in claim 43 wherein said clearing circuitry causes periodic clearing from approximately every 10 microseconds to approximately every 2000 microseconds.
Claim 51
Dependent Claim
103 words
A reactive plasma sputtering system comprising: a. a coating chamber; b. a material target disposed to expose coating material within said chamber; c. a reactive gas supply connected to said coating chamber wherein said gas reacts with said coating material to form electrically insulating material; d. a DC power source which applies direct current power within said coating chamber to cause processing; and e. interruption circuitry which interrupts said direct current power so as to avoid potential arcing conditions in the first place during processing, which acts for a time which does not extinguish said plasma, and then which automatically resumes said processing.
Claim 52
Dependent Claim
103 words
A reactive plasma sputtering system comprising: a. a coating chamber; b. a material target disposed to expose coating material within said chamber; c. a reactive gas supply connected to said coating chamber wherein said gas reacts with said coating material to form electrically insulating material; d. a DC power source which applies direct current power within said coating chamber to cause processing; and e. interruption circuitry which interrupts said direct current power so as to avoid potential arcing conditions in the first place during processing, which acts for a time which does not extinguish said plasma, and then which automatically resumes said processing.
Claim 53
Dependent Claim
26 words
A reactive plasma sputtering system as described in claim 45 wherein said interruption circuitry causes interruption from approximately every 10 microseconds to approximately every 2000 microseconds.
Claim 54
Dependent Claim
24 words
A reactive plasma sputtering system as described in claim 45 wherein said interruption circuitry causes interruption for approximately 1 microsecond to approximately 10 microseconds.
Claim 55
Dependent Claim
25 words
A reactive plasma sputtering system as described in claim 47 wherein said interruption circuitry activates from approximately every 10 microseconds to approximately every 2000 microseconds.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-02-16 | 2001-08-18 | 2002-02-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-02-16 | 2005-08-18 | 2006-02-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-02-16 | 2009-08-18 | 2010-02-17 | $7700.00 | Window Closed / Lapsed |