Redundancy circuit of a semiconductor memory device

Claim 2

A redundancy circuit of a semiconductor memory device having a normal memory cell array for storing data, redundant memory cells for repairing fail cells in said normal memory cell array, a normal decoder for receiving addresses, each said address including a plurality of bits, each bit having an input state being one of a first state and a second state opposite said first state, said normal decoder designating corresponding normal memory cells in said normal memory cell array, and a redundancy decoder for selecting said redundant memory cells, said redundancy circuit comprising: a control circuit which is operative to receive said addresses and to detect addresses which have fail addresses corresponding to said fail cells, said control circuits cutting fuses which correspond to bits of each fail address having said first state, and, upon subsequent input of one of said fail addresses, outputting a control signal corresponding thereto; and a transmission circuit which receives said addresses and has a first path for outputting certain of said bits of each said address and a second path for outputting remaining bits of each said address with a state opposite said input state, one of said first path and said second path being selected for each bit in accordance with each said control signal of said control circuit.

Claim 3

The redundancy circuit according to claim 1, wherein each of said fuses is coupled between a power supply voltage and an output node which discharges according to a corresponding bit of said fail addresses and a control clock.

Claim 4

The redundancy circuit according to claim 2, wherein said control circuit includes a single fuse corresponding to each of said bits of said addresses in order to program each bit of each said fail addresses.

Claim 5

The redundancy circuit according to claim 3, wherein each of said fuses are cut off on the basis of said first state of corresponding bits of said fail addresses.

Claim 6

The redundancy circuit according to claim 4, wherein said first state is a logic low state.

Claim 7

The redundancy circuit according to claim 4, wherein said first state is a logic high state.

Claim 8

The redundancy circuit according to claim 3, wherein said control signal is a control signal having a plurality of bits, each bit corresponding to one of said plurality of bits of said addresses.

Claim 9

The redundancy circuit according to claim 1, wherein said control circuit cuts said fuses to repair said fail cells in a package state which are detected after a burn-in test.

Claim 10

The redundancy circuit according to claim 2, further comprising a control clock generator which receives first and second data formats and outputs said control clock in accordance therewith.

Claim 11

The redundancy circuit according to claim 9, wherein said control clock generator includes a control fuse which is cut after a programming operation to thereafter disable output of said control clock.

Claim 12

The redundancy circuit according to claim 1, further comprising a logic circuit which receives said bits output by said transmission circuit and which generates a signal for said redundancy decoder to select said redundant memory cells according to said bits.

Claim 13

The redundancy circuit according to claim 11, wherein said logic circuit is comprised of a plurality of NAND gates.

Claim 14

A redundancy circuit of a semiconductor memory device having a normal memory cell array for storing data, redundant memory cells for repairing fail cells in said normal memory cell array which are detected during a burn-in test, a normal decoder for receiving addresses, each said address including a plurality of bits, each bit having an input state being one of a first state and a second state opposite said first state, said normal decoder designating corresponding normal memory cells in said normal memory cell array, and a redundancy decoder for selecting said redundant memory cells, said redundancy circuit comprising: a control circuit which is operative to receive said addresses and to detect addresses which have fail addresses corresponding to said fail cells, said control circuit outputting a control signal corresponding to each bit of said addresses, said control circuit being operative to cut fuses corresponding to bits of each said fail address during a programming operation after said burn-in test to repair said fail cells when said semiconductor memory device is in a package state; and a transmission circuit which receives said addresses and has a first path for outputting certain of said bits of each said address and a second path for outputting remaining bits of each said address with a state opposite said input state, said first path being selected during said burn-in test to output all bits of each said address to burn in both said normal memory cells and said redundant memory cells, and one of said first path and said second path being selected after said programming operation for each bit in accordance with each said control signal of said control circuit.

Claim 15

A redundancy circuit of a semiconductor memory device having a normal memory cell array for storing data, redundant memory cells for repairing fail cells in said normal memory cell array which are detected during a burn-in test, a normal decoder for receiving addresses, each said address including a plurality of bits, each bit having an input state being one of a first state and a second state opposite said first state, said normal decoder designating corresponding normal memory cells in said normal memory cell array, and a redundancy decoder for selecting said redundant memory cells, said redundancy circuit comprising: a control circuit which is operative to receive said addresses and to detect addresses which have fail addresses corresponding to said fail cells, said control circuit outputting a control signal corresponding to each bit of said addresses, said control circuit being operative to cut fuses corresponding to bits of each said fail address during a programming operation after said burn-in test to repair said fail cells when said semiconductor memory device is in a package state; and a transmission circuit which receives said addresses and has a first path for outputting certain of said bits of each said address and a second path for outputting remaining bits of each said address with a state opposite said input state, said first path being selected during said burn-in test to output all bits of each said address to burn in both said normal memory cells and said redundant memory cells, and one of said first path and said second path being selected after said programming operation for each bit in accordance with each said control signal of said control circuit.

Claim 16

The redundancy circuit according to claim 13, wherein said control circuit cuts fuses which correspond to bits of each fail address having said first state, and, upon subsequent input of one of said fail addresses, outputs a control signal corresponding thereto.

Claim 17

The redundancy circuit according to claim 14, wherein each of said fuses is coupled between a power supply voltage and an output node which discharges according to a corresponding bit of said fail addresses and a control clock.

Claim 18

The redundancy circuit according to claim 15, wherein said control circuit includes a single fuse corresponding to each of said bits of said addresses in order to program each bit of each said fail addresses.

Claim 19

The redundancy circuit according to claim 16, wherein each of said fuses are cut off on the basis of said first state of corresponding bits of said fail addresses.

Claim 20

The redundancy circuit according to claim 16, wherein said control signal is a control signal having a plurality of bits, each bit corresponding to one of said plurality of bits of said addresses.

Claim 21

The redundancy circuit according to claim 15, further comprising a control clock generator which receives first and second data formals and outputs said control clock in accordance therewith.

Claim 22

The redundancy circuit according to claim 19, wherein said control clock generator includes a control fuse which is cut after a programming operation to thereafter disable output of said control clock.