US5528051A
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Quantum well infrared detector
Assignee: Picogiga SA
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Filing: 1993-01-21
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Granted: 1996-06-18
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Expires: 2013-01-21
Abstract
Abstract The semiconductor component, comprises a succession of alternating stacked layers of a III-V semiconductor material with a large forbidden band such as Al x Ga 1-x As and a III-V semiconductor material with a small forbidden band such as GaAs with p-doping, defining a quantum (9) with sub-bands of HH and LH type in the region of the layer comprising the material with a small forbidden band in the valence band diagram (E v ) of each corresponding heterostructure. According to the invention, the thickness of the material with a small forbidden band is essentially selected in such a manner that only two quantum sub-levels LH 1 and HH 1 appear in the well, and the energy difference between these two sub-levels corresponds to the energy of the photons (6) to be detected, and the composition of the material with the large forbidden band is essentially selected in such a manner that the height adjacent the barrier (ΔE v ) of the quantum well is equal to or greater than the energy of the LH 1 sub-band.
Inventors
- 👤 Linh T. Nuyen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 15:32
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H10; H10F; H10F77/00; H10F77/10; H10F77/14; H10F77/146
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
171 words
A semiconductor component of quantum well infrared detector type comprising a succession of alternating stacked layers of III-V semiconductor material with a large forbidden band and a III-V semiconductor material with a small forbidden band with p-doping, defining an assembly of potential barriers alternating in series with quantum wells, each well including sub-bands of HH and LH type in the region of the layer comprising the material with the small forbidden band in the valance diagram (E v ) of each corresponding heterostructure, characterized in that: the thickness of the layers of the material with a small forbidden band is selected such that only two quantum sub-levels LH 1 and HH 1 appear in each well, and in that the energy difference between the two sub-levels corresponds to the energy of photons to be detected, and the material with the large forbidden band comprises a composition that causes the height (ΔE v ) of the potential barriers to be equal to or greater than the energy of the LH 1 sub-band.
Claim 2
Dependent Claim
171 words
A semiconductor component of quantum well infrared detector type comprising a succession of alternating stacked layers of III-V semiconductor material with a large forbidden band and a III-V semiconductor material with a small forbidden band with p-doping, defining an assembly of potential barriers alternating in series with quantum wells, each well including sub-bands of HH and LH type in the region of the layer comprising the material with the small forbidden band in the valance diagram (E v ) of each corresponding heterostructure, characterized in that: the thickness of the layers of the material with a small forbidden band is selected such that only two quantum sub-levels LH 1 and HH 1 appear in each well, and in that the energy difference between the two sub-levels corresponds to the energy of photons to be detected, and the material with the large forbidden band comprises a composition that causes the height (ΔE v ) of the potential barriers to be equal to or greater than the energy of the LH 1 sub-band.
Claim 3
Dependent Claim
77 words
The component of claim 2 wherein, for resonant-tunnel-effect light holes populate the sub-level LH 1 and resonant-tunnel-effect heavy holes populate the HH 1 sub-level, the thickness of the layers of the material with a large forbidden band is so selected that the height of the potential barriers defined by the layers of said material creates for the light holes a state in which light-hole wave function is spread over the assembly, while heavy-hole wave function is localized.
Claim 4
Dependent Claim
19 words
The component of claim 1 wherein the material with a large forbidden band is Al x Ga 1-x As.
Claim 5
Dependent Claim
15 words
The component of claim 3 wherein the material with a small forbidden band is GaAs.
Claim 6
Dependent Claim
27 words
The component of claim 4 wherein the thickness of the layer of the material with a small forbidden band lies approximately between 1.5 nm and 2.5 nm.
Claim 7
Dependent Claim
23 words
The component of claim 4 wherein the thickness of the layers of the material with a large forbidden band is approximately 8 nm.
Claim 8
Dependent Claim
28 words
The component of claim 3 wherein the material with a small forbidden band is In y Ga 1-y As with an indium content of approximately Y In ≦0.05.
References Cited (Backward Citations)
EP0299841A2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-06-18 | 1999-12-18 | 2000-06-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-06-18 | 2003-12-18 | 2004-06-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-06-18 | 2007-12-18 | 2008-06-18 | $7700.00 | Window Closed / Lapsed |