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US5319653A
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Integrated optical component structure
Assignee: Orange SA
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Filing: 1992-11-19
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Granted: 1994-06-07
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Expires: 2012-11-19
Abstract
Abstract An integrated optical component structure designed to operate at a rare earth ion fluorescence wavelength λ 1 comprises at least a thin layer of a mixed rare earth fluoride solid solution having the formula (1-x)(M 1-y M' y F 2 )-x TRF z deposited on a substrate of a monocrystalline semiconductor material where M and M' denote an alkaline earth ion, TRF z denotes a rare earth fluoride, x is in the range ]0,1[ and y is in the range [0,1]. The component structure finds applications in telecommunications using optical waveguides.
Inventors
- 👤 Pierre-Noel Favennec
- 👤 Helene L'Haridon
- 👤 Danielle Moutonnet
- 👤 Albert Barriere
- 👤 Sebastien Raoux
- 👤 Bruno Nombelli
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:38
CPC Classifications
C; C09; C09K; C09K11/00; C09K11/08; C09K11/77; C09K11/7704; C09K11/7705; G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/122; H; H01; H01S; H01S3/00; H01S3/05; H01S3/06; H01S3/063; H01S3/14; H01S3/16; H01S3/1601; H01S3/1603; H01S3/1608; H01S3/163
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
81 words
An integrated optical component structure which produces radiation at a rare earth ion fluorescence wavelength λ 1 comprising at least a thin layer of a mixed rare earth fluoride solid solution having the formula (1-x)(M 1-y M' y F 2 )-x TRF 3 deposited on a substrate of a monocrystalline semiconductor material where M and M' denote an alkaline earth ion, TRF 3 denotes a rare earth fluoride, x is in the range (0,1) and y is in the range (0,1).
Claim 2
Dependent Claim
81 words
An integrated optical component structure which produces radiation at a rare earth ion fluorescence wavelength λ 1 comprising at least a thin layer of a mixed rare earth fluoride solid solution having the formula (1-x)(M 1-y M' y F 2 )-x TRF 3 deposited on a substrate of a monocrystalline semiconductor material where M and M' denote an alkaline earth ion, TRF 3 denotes a rare earth fluoride, x is in the range (0,1) and y is in the range (0,1).
Claim 3
Dependent Claim
34 words
An integrated optical component structure according to claim 1 wherein said wavelength λ 1 represents the 4 I 13/2 > 4 I 15/2 transition at 1.54 μm of the erbium ion Er 3+ .
Claim 4
Dependent Claim
25 words
An integrated optical component structure according to claim 1 wherein the molar fraction x of rare earth fluoride TRF z is in the range (0,0,2).
Claim 5
Dependent Claim
16 words
An integrated optical component structure according to claim 1 wherein said monocrystalline semiconductor material is silicon.
Claim 6
Dependent Claim
18 words
An integrated optical component structure according to claim 1 wherein said monocrystalline semiconductor material is a III-V compound.
Claim 7
Independent Claim
167 words
A method of producing an integrated optical component structure designed to operate at a rare earth ion fluorescence wavelength λ 1 comprising at least a thin layer of a mixed rare earth fluoride solid solution having the formula (1-x)(M 1-y M' y F 2 )-x TRF 3 deposited on a substrate of a monocrystalline semiconductor material where M and M' denote an alkaline earth ion, TRF 3 denotes a rare earth fluoride, x is in the range (0, 1) and y is in the range (0,1), said method comprising the following stages: preparing an initial powder of alkaline earth fluoride M x-y M' y F 2 , preparing an initial powder of rare earth fluoride TRF 3 , mixing said initial powders in a particular molar fraction x, producing a mixed rare earth fluoride solid solution (1-x)(M 1-y M' y F 2 )-xTRF 3 by heating said mixture at high temperature, epitaxially growing said solid solution thin film on a surface of said monocrystalline semiconductor material substrate.
Claim 8
Independent Claim
167 words
A method of producing an integrated optical component structure designed to operate at a rare earth ion fluorescence wavelength λ 1 comprising at least a thin layer of a mixed rare earth fluoride solid solution having the formula (1-x)(M 1-y M' y F 2 )-x TRF 3 deposited on a substrate of a monocrystalline semiconductor material where M and M' denote an alkaline earth ion, TRF 3 denotes a rare earth fluoride, x is in the range (0, 1) and y is in the range (0,1), said method comprising the following stages: preparing an initial powder of alkaline earth fluoride M x-y M' y F 2 , preparing an initial powder of rare earth fluoride TRF 3 , mixing said initial powders in a particular molar fraction x, producing a mixed rare earth fluoride solid solution (1-x)(M 1-y M' y F 2 )-xTRF 3 by heating said mixture at high temperature, epitaxially growing said solid solution thin film on a surface of said monocrystalline semiconductor material substrate.
Claim 9
Dependent Claim
14 words
A method according to claim 6 wherein said surface is a (100) crystal face.
Claim 10
Dependent Claim
157 words
A integrated optical component having a guide structure comprising an integrated optical component structure designed to operate at a rare earth ion fluorescence wavelength λ 1 comprising at least a thin layer of a mixed rare earth fluoride solid solution having the formula (1-x)(M 1-y M' y F 2 )-x TRF 3 deposited on a substrate of a monocrystalline semiconductor material where M and M' denote an alkaline earth ion, TRF 3 denotes a rare earth fluoride, x is in the range (0,1) and y is in the range (0,1), said component including a first microstrip thin film of index n a , a first mixed rare earth solid solution deposited on said monocrystalline semiconductor material substrate, a second microstrip thin film of index n b greater than n a , a second mixed rare earth solid solution deposited on said first thin film and a third medium of index n c less than n b .
Claim 11
Dependent Claim
157 words
A integrated optical component having a guide structure comprising an integrated optical component structure designed to operate at a rare earth ion fluorescence wavelength λ 1 comprising at least a thin layer of a mixed rare earth fluoride solid solution having the formula (1-x)(M 1-y M' y F 2 )-x TRF 3 deposited on a substrate of a monocrystalline semiconductor material where M and M' denote an alkaline earth ion, TRF 3 denotes a rare earth fluoride, x is in the range (0,1) and y is in the range (0,1), said component including a first microstrip thin film of index n a , a first mixed rare earth solid solution deposited on said monocrystalline semiconductor material substrate, a second microstrip thin film of index n b greater than n a , a second mixed rare earth solid solution deposited on said first thin film and a third medium of index n c less than n b .
Claim 12
Dependent Claim
33 words
An integrated optical component according to claim 8 wherein said third medium comprises a third microstrip thin film of a third mixed rare earth fluoride solid solution deposited on said second thin film.
Claim 13
Dependent Claim
199 words
An Optical waveguide comprising an integrated optical component having a guide structure comprising an integrated optical component structure which produces radiation at a rare earth ion fluorescence wavelength λ 1 comprising at least a thin layer of a mixed rare earth fluoride solid solution having the formula (1-x)(M 1-y M' y F 2 )-x TRF 3 deposited on a substrate of a monocrystalline semiconductor material where M and M' denote an alkaline earth ion, TRF 3 denotes a rare earth fluoride, x is in the range (0,1) and y is in the range (0,1), said component including a first microstrip thin film of index n a , first mixed rare earth solid solution deposited on said monocrystalline semiconductor material substrate, a second microstrip thin film of index n b greater than n a , a second mixed rare earth solid solution deposited on said first thin film and a third medium of index n c less than n b wherein said third medium comprises a third microstrip thin film of a third mixed rare earth fluoride solid solution deposited on said second thin film and wherein said first, second and third microstrip thin films form a mesa type microstrip.
Claim 14
Dependent Claim
199 words
An Optical waveguide comprising an integrated optical component having a guide structure comprising an integrated optical component structure which produces radiation at a rare earth ion fluorescence wavelength λ 1 comprising at least a thin layer of a mixed rare earth fluoride solid solution having the formula (1-x)(M 1-y M' y F 2 )-x TRF 3 deposited on a substrate of a monocrystalline semiconductor material where M and M' denote an alkaline earth ion, TRF 3 denotes a rare earth fluoride, x is in the range (0,1) and y is in the range (0,1), said component including a first microstrip thin film of index n a , first mixed rare earth solid solution deposited on said monocrystalline semiconductor material substrate, a second microstrip thin film of index n b greater than n a , a second mixed rare earth solid solution deposited on said first thin film and a third medium of index n c less than n b wherein said third medium comprises a third microstrip thin film of a third mixed rare earth fluoride solid solution deposited on said second thin film and wherein said first, second and third microstrip thin films form a mesa type microstrip.
Claim 15
Dependent Claim
207 words
An optical wave guide comprising an integrated optical component structure which produces radiation at a rare earth ion fluorescence wavelength λ 1 comprising at least a thin layer of a mixed rare earth fluoride solid solution having the formula (1-x)(M 1-y M' y F 2 )-x TRF 3 deposited on a substrate of a monocrystalline semiconductor material where M and M' denote an alkaline earth ion, TRF 3 denotes a rare earth fluoride, x is in the range (0,1) and y is in the range (0,1), said component including a first microstrip thin film of index n a , first mixed rare earth solid solution deposited on said monocrystalline semiconductor material substrate, a second microstrip thin film of index n b greater than n a , a second mixed rare earth solid solution deposited on said first thin film and a third medium of index n c less than n b wherein said third medium comprises a third microstrip thin film of a third mixed rare earth fluoride solid solution deposited on said second thin film and wherein said first, second and third microstrip thin films form a planar type microstrip with two microstrip lateral layers of said first or third mixed rare earth fluoride solid solution.
Claim 16
Dependent Claim
207 words
An optical wave guide comprising an integrated optical component structure which produces radiation at a rare earth ion fluorescence wavelength λ 1 comprising at least a thin layer of a mixed rare earth fluoride solid solution having the formula (1-x)(M 1-y M' y F 2 )-x TRF 3 deposited on a substrate of a monocrystalline semiconductor material where M and M' denote an alkaline earth ion, TRF 3 denotes a rare earth fluoride, x is in the range (0,1) and y is in the range (0,1), said component including a first microstrip thin film of index n a , first mixed rare earth solid solution deposited on said monocrystalline semiconductor material substrate, a second microstrip thin film of index n b greater than n a , a second mixed rare earth solid solution deposited on said first thin film and a third medium of index n c less than n b wherein said third medium comprises a third microstrip thin film of a third mixed rare earth fluoride solid solution deposited on said second thin film and wherein said first, second and third microstrip thin films form a planar type microstrip with two microstrip lateral layers of said first or third mixed rare earth fluoride solid solution.
Claim 17
Dependent Claim
212 words
A microlaser comprising an integrated optical component having a guide structure comprising an integrated optical component structure which produces radiation at a rare earth ion fluorescence wavelength λ 1 comprising at least a thin layer of a mixed rare earth fluoride solid solution having the formula (1-x)(M 1-y M' y F 2 )-x TRF 3 deposited on a substrate of a monocrystalline semiconductor material where M and M' denote an alkaline earth ion, TRF 3 denotes a rare earth fluoride, x is in the range (0,1) and y is in the range (0,1), said component including a first microstrip thin film of index n a , a first mixed rare earth solid solution deposited on said monocrystalline semiconductor material substrate, a second microstrip thin film of index n b greater than n a , a second mixed rare earth solid solution deposited on said first thin film and a third medium of index n c less than n b wherein said third medium comprises a third microstrip thin film of a third mixed rare earth fluoride solid solution deposited on said second thin film and wherein said first, second and third microstrip thin films are disposed between two mirrors defining a cavity and further comprising means for optically pumping said rare earth.
Claim 18
Dependent Claim
212 words
A microlaser comprising an integrated optical component having a guide structure comprising an integrated optical component structure which produces radiation at a rare earth ion fluorescence wavelength λ 1 comprising at least a thin layer of a mixed rare earth fluoride solid solution having the formula (1-x)(M 1-y M' y F 2 )-x TRF 3 deposited on a substrate of a monocrystalline semiconductor material where M and M' denote an alkaline earth ion, TRF 3 denotes a rare earth fluoride, x is in the range (0,1) and y is in the range (0,1), said component including a first microstrip thin film of index n a , a first mixed rare earth solid solution deposited on said monocrystalline semiconductor material substrate, a second microstrip thin film of index n b greater than n a , a second mixed rare earth solid solution deposited on said first thin film and a third medium of index n c less than n b wherein said third medium comprises a third microstrip thin film of a third mixed rare earth fluoride solid solution deposited on said second thin film and wherein said first, second and third microstrip thin films are disposed between two mirrors defining a cavity and further comprising means for optically pumping said rare earth.
Claim 19
Dependent Claim
16 words
A microlaser according to claim 12 wherein said mirrors are disposed externally of said thin films.
Claim 20
Dependent Claim
28 words
A microlaser according to claim 12 wherein said mirrors are metal thin films deposited on the lateral faces of said mixed rare earth fluoride solid solution thin films.
Claim 21
Dependent Claim
24 words
A microlaser according to claim 12 wherein said optical pumping means for optically pumping said rare earth are external to said integrated optical component.
Claim 22
Dependent Claim
23 words
A microlaser according to claim 12 wherein said optical pumping means for optically pumping said rare earth comprise said monocrystalline semiconductor material substrate.
Claim 23
Dependent Claim
22 words
A microlaser according to claim 16 wherein said monocrystalline semiconductor material substrate is selected from a light-emitting diode and a laser diode.
Claim 24
Dependent Claim
125 words
An optical converter device comprising an integrated optical component structure which produces radiation at a rare earth ion fluorescence wavelength λ 1 comprising at least a thin layer of a mixed rare earth fluoride solid solution having the formula (1-x)(M 1-y M' y F 2 )-x TRF 3 deposited on a substrate of a monocrystalline semiconductor material where M and M' denote an alkaline earth ion, TRF 3 denotes a rare earth fluoride, x is in the range (0,1) and y is in the range (0,1), and a control means which produces radiation at a wavelength λ 2 less than λ 1 , said radiation at the λ 2 wavelength being directed at said optical component structure which then emits at the λ 1 wavelength.
Claim 25
Dependent Claim
125 words
An optical converter device comprising an integrated optical component structure which produces radiation at a rare earth ion fluorescence wavelength λ 1 comprising at least a thin layer of a mixed rare earth fluoride solid solution having the formula (1-x)(M 1-y M' y F 2 )-x TRF 3 deposited on a substrate of a monocrystalline semiconductor material where M and M' denote an alkaline earth ion, TRF 3 denotes a rare earth fluoride, x is in the range (0,1) and y is in the range (0,1), and a control means which produces radiation at a wavelength λ 2 less than λ 1 , said radiation at the λ 2 wavelength being directed at said optical component structure which then emits at the λ 1 wavelength.
Claim 26
Dependent Claim
14 words
A device according to claim 18 wherein said control means comprise an external laser.
Claim 27
Dependent Claim
16 words
A device according to claim 18 wherein said control means comprise said monocrystalline semiconductor material substrate.
Claim 28
Dependent Claim
22 words
A device according to claim 20 wherein said monocrystalline semiconductor material substrate is selected from a light-emitting diode and a laser diode.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-06-06 | 1997-12-06 | 1998-06-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-06-06 | 2001-12-06 | 2002-06-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-06-06 | 2005-12-06 | 2006-06-07 | $7700.00 | Window Closed / Lapsed |