US5266528A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of dicing semiconductor wafer with diamond and resin blades
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1992-09-09
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Granted: 1993-11-30
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Expires: 2012-09-09
Abstract
Abstract A method of dicing a semiconductor wafer for dividing a semiconductor wafer having a large number of devices formed thereon in a matrix into a large number of chips by the use of a diamond blade, includes the steps of first cutting by the use of the diamond blade in such a manner as to leave a partial residual portion or portions in a direction of thickness of the wafer and to define a plurality of grooves on the wafer in transverse and longitudinal directions, and then cutting the wafer along the grooves by the use of a resin blade having a width equal to or smaller than that of the diamond blade while a feed speed thereof is kept lower than that of the diamond blade.
Inventors
- 👤 Yutaka Yamada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 13:13
CPC Classifications
H; H10; H10P; H10P54/00; B; B28; B28D; B28D5/00; B28D5/02; B28D5/022; Y; Y10; Y10S; Y10S148/00; Y10S148/028; Y10T; Y10T83/00; Y10T83/04; Y10T83/0524; Y10T83/0572
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
146 words
A method of dicing a semiconductor wafer for dividing a semiconductor wafer having a large number of devices formed thereon in a matrix and having a tape provided on a back of the semiconductor wafer into a large number of chips by the use of a diamond blade, comprising the steps of: first effecting cutting by use of said diamond blade so as to leave a partial residual portion or portions in a direction of thickness of said wafer and to define a plurality of grooves on said wafer in transverse and longitudinal directions; and then cutting said wafer along said grooves so that the cutting reaches a surface of the tape by the use of a resin blade having a width equal to or smaller than that of said diamond blade while a feed speed thereof is kept lower than that of said diamond blade.
Claim 2
Independent Claim
146 words
A method of dicing a semiconductor wafer for dividing a semiconductor wafer having a large number of devices formed thereon in a matrix and having a tape provided on a back of the semiconductor wafer into a large number of chips by the use of a diamond blade, comprising the steps of: first effecting cutting by use of said diamond blade so as to leave a partial residual portion or portions in a direction of thickness of said wafer and to define a plurality of grooves on said wafer in transverse and longitudinal directions; and then cutting said wafer along said grooves so that the cutting reaches a surface of the tape by the use of a resin blade having a width equal to or smaller than that of said diamond blade while a feed speed thereof is kept lower than that of said diamond blade.
Claim 3
Dependent Claim
33 words
A method according to claim 1, wherein the first cutting by the diamond blade is effected at a speed of revolution of 30,000 rpm and a feed speed of 80 to 100 mm/sec.
Claim 4
Dependent Claim
33 words
A method according to claim 1, wherein the second cutting by the resin blade is effected at a speed of revolution of 30,000 to 52,000 rpm and a feed speed of 10 mm/sec.
Claim 5
Independent Claim
150 words
A method of dicing a semiconductor wafer for dividing a semiconductor wafer having a large number of devices formed thereon in a matrix into a large number of chips, the semiconductor wafer further having a tape adhered to a back surface thereof, said method comprising the steps of: selecting a diamond blade for initially cutting the wafer; cutting with the diamond blade so as to leave a partial residual portion or portions in a direction of thickness of the wafer therein defining a plurality of grooves on the wafer in transverse and longitudinal directions; selecting a resin blade having a width equal to or smaller than that of the diamond blade for final cutting of the wafer; and cutting the wafer with the resin blade at a feed speed lower than that used with the diamond blade along the grooves so that said cutting reaches a surface of the tape.
Claim 6
Independent Claim
150 words
A method of dicing a semiconductor wafer for dividing a semiconductor wafer having a large number of devices formed thereon in a matrix into a large number of chips, the semiconductor wafer further having a tape adhered to a back surface thereof, said method comprising the steps of: selecting a diamond blade for initially cutting the wafer; cutting with the diamond blade so as to leave a partial residual portion or portions in a direction of thickness of the wafer therein defining a plurality of grooves on the wafer in transverse and longitudinal directions; selecting a resin blade having a width equal to or smaller than that of the diamond blade for final cutting of the wafer; and cutting the wafer with the resin blade at a feed speed lower than that used with the diamond blade along the grooves so that said cutting reaches a surface of the tape.
Claim 7
Independent Claim
150 words
A method of dicing a semiconductor wafer for dividing a semiconductor wafer having a large number of devices formed thereon in a matrix into a large number of chips, said method comprising the steps of: mounting an adhesive tape to a back surface of the semiconductor wafer; selecting a diamond blade for initially cutting the wafer; cutting with the diamond blade so as to leave a partial residual portion or portions in a direction of thickness of the wafer therein defining a plurality of grooves on the wafer in transverse and longitudinal directions; selecting a resin blade having a width equal to or smaller than that of the diamond blade for final cutting of the wafer; and cutting the wafer with the resin blade at a feed speed lower than that used with the diamond blade along the grooves so that said cutting reaches a surface of the adhesive tape.
Claim 8
Independent Claim
150 words
A method of dicing a semiconductor wafer for dividing a semiconductor wafer having a large number of devices formed thereon in a matrix into a large number of chips, said method comprising the steps of: mounting an adhesive tape to a back surface of the semiconductor wafer; selecting a diamond blade for initially cutting the wafer; cutting with the diamond blade so as to leave a partial residual portion or portions in a direction of thickness of the wafer therein defining a plurality of grooves on the wafer in transverse and longitudinal directions; selecting a resin blade having a width equal to or smaller than that of the diamond blade for final cutting of the wafer; and cutting the wafer with the resin blade at a feed speed lower than that used with the diamond blade along the grooves so that said cutting reaches a surface of the adhesive tape.
References Cited (Backward Citations)
JPS5572055A
Cited
US4878992A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-11-29 | 1997-05-31 | 1997-11-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-29 | 2001-05-31 | 2001-11-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-29 | 2005-05-31 | 2005-11-30 | $7700.00 | Window Closed / Lapsed |