Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
66 words
A diamond-coated member comprising an acicular diamond layer, an intermediate layer formed by a metal belonging to either of the group IIIb, IVa, Va or VIa of the periodic table or by a compound containing said metal, Si or B, and a non-acicular diamond layer superimposed on the surface of a base material, wherein said acicular diamond layer is in direct contact with said base material.
Claim 2
Dependent Claim
66 words
A diamond-coated member comprising an acicular diamond layer, an intermediate layer formed by a metal belonging to either of the group IIIb, IVa, Va or VIa of the periodic table or by a compound containing said metal, Si or B, and a non-acicular diamond layer superimposed on the surface of a base material, wherein said acicular diamond layer is in direct contact with said base material.
Claim 3
Dependent Claim
22 words
A diamond-coated member as claimed in claim 1, wherein the base material is a metal, a sintered metal or a sintered ceramic.
Claim 4
Dependent Claim
17 words
A diamond-coated member as claimed in claim 1, wherein the base material is a super hard alloy.
Claim 5
Dependent Claim
32 words
A diamond-coated member as claimed in claim 1, wherein the acicular diamond layer has a thickness ranging from 0.1 micron to 100 microns and an aspect ratio ranging from 3 to 100.
Claim 6
Dependent Claim
25 words
A diamond-coated member as claimed in claim 1, wherein the intermediate layer comprises the metal belonging to the group VIa or the compound containing Si.
Claim 7
Dependent Claim
18 words
A diamond-coated member as claimed in claim 1, wherein the intermediate layer comprises W, WSi 2 or Si.
Claim 8
Dependent Claim
115 words
A process for the preparation of a diamond-coated member characterized in that a diamond layer is formed on the surface of a base material by vapor phase synthesis method; the resulting diamond layer is converted into acicular diamond by exposing the resulting diamond layer to a gas obtainable by exciting an oxygen-containing etching gas; an intermediate layer comprising a metal belonging to either of the group IIIb, IVa, Va or VIa of the periodic table or by a compound containing the said metal, Si or B is formed on the resulting acicular diamond; and the resulting intermediate layer is exposed to a gas obtainable by exciting a raw material gas containing a carbon source gas.
Claim 9
Dependent Claim
115 words
A process for the preparation of a diamond-coated member characterized in that a diamond layer is formed on the surface of a base material by vapor phase synthesis method; the resulting diamond layer is converted into acicular diamond by exposing the resulting diamond layer to a gas obtainable by exciting an oxygen-containing etching gas; an intermediate layer comprising a metal belonging to either of the group IIIb, IVa, Va or VIa of the periodic table or by a compound containing the said metal, Si or B is formed on the resulting acicular diamond; and the resulting intermediate layer is exposed to a gas obtainable by exciting a raw material gas containing a carbon source gas.
Claim 10
Dependent Claim
28 words
A process for the preparation of the diamond-coated member as claimed in claim 7, wherein the base material is a metal, a sintered metal or a sintered ceramic.
Claim 11
Dependent Claim
23 words
A process for the preparation of the diamond-coated member as claimed in claim 7, wherein the base material is a super hard alloy.
Claim 12
Dependent Claim
38 words
A process for the preparation of the diamond-coated member as claimed in claim 7, wherein the acicular diamond layer has a thickness ranging from 0.1 micron to 100 microns and an aspect ratio ranging from 3 to 100.
Claim 13
Dependent Claim
31 words
A process for the preparation of the diamond-coated member as claimed in claim 7, wherein the intermediate layer comprises the metal belonging to the group VIa or the compound containing Si.
Claim 14
Dependent Claim
24 words
A process for the preparation of the diamond-coated member as claimed in claim 7, wherein the intermediate layer comprises W, WSi 2 or Si.