Method for etching a pattern in layer of gold

Abstract

Abstract The present applicant has discovered that gold can be patterned by masking and reactively ion etching in a CF 4 /O 2 plasma. In accordance with the invention, a layer of gold is patterned by the steps of a) forming a layer of gold on a substrate, b) masking the gold layer to selectively expose a pattern to be etched, c) exposing the masked layer to a CF 4 /O 2 plasma. In preferred practice, the substrate comprises a gallium arsenide substrate having an interface layer comprising titanium to promote adhesion of the gold layer, and the gold layer is formed by sputtering onto the interface layer. The gold layer is masked by photoresist, and the masked layer is exposed to a CF 4 /O 2 plasma with the molar percent of O 2 in excess of about 8%. Advantageously, the exposed intermediate layer can be plasma etched away.

Inventors

• 👤 Joseph Shmulovich

Bibliographic Details