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US5055780A Expired / Lapsed US ⏱️ 0.0 years remaining

Probe plate used for testing a semiconductor device, and a test apparatus therefor

Assignee: Mitsubishi Electric Corp
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Filing: 1990-02-05
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Granted: 1991-10-08
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Expires: 2010-02-05
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Abstract

Abstract A test apparatus for a semiconductor device is provided to be used for testing, wafer by wafer, a semiconductor device formed on a semiconductor wafer. The test apparatus for a semiconductor device comprises a test head, a probe card and a selection circuit. The probe card has an insulating transparent base plate, and protruding parts are formed on the main surface of the base plate corresponding to electrode pads on a test object semiconductor wafer, and conductive layer forming a prober for the electrode pad is formed on the surface of each of these protruding parts. A wiring layer is formed on the surface opposite to the main surface. The wiring layer and the probers are connected electrically through the through holes provided on the base plate. A prober to be connected to the test head is switched electrically, which makes it possible to test a semiconductor device without moving the corresponding semiconductor wafer.

Inventors

  • 👤 Ryouichi Takagi
  • 👤 Tetsuo Tada
  • 👤 Masanobu Kohara

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-23 17:19
CPC Classifications
G; G01; G01R; G01R1/00; G01R1/02; G01R1/04

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 121 words
A test apparatus for a semiconductor device for testing a semiconductor device having electrode pads formed on a semiconductor wafer, the test apparatus comprising: a tester for testing said semiconductor device; a prober plate, comprising a base plate having a main surface and having portions homogenous with the base plate protruding from said main surface in a disposition corresponding to said electrode pads of said semiconductor wafer in said main surface and conductive probers formed on the surface of said protruding portions to serve as contact parts with said electrode pads; and switching means, connected to said tester and to each of said probers for switching said probers electrically to select one of said probers to be connected to said tester.
Claim 2
Dependent Claim 121 words
A test apparatus for a semiconductor device for testing a semiconductor device having electrode pads formed on a semiconductor wafer, the test apparatus comprising: a tester for testing said semiconductor device; a prober plate, comprising a base plate having a main surface and having portions homogenous with the base plate protruding from said main surface in a disposition corresponding to said electrode pads of said semiconductor wafer in said main surface and conductive probers formed on the surface of said protruding portions to serve as contact parts with said electrode pads; and switching means, connected to said tester and to each of said probers for switching said probers electrically to select one of said probers to be connected to said tester.
Claim 3
Dependent Claim 68 words
A test apparatus for a semiconductor device according to claim 1, wherein: said switching means is able to connect electrically a prober corresponding to an electrode pad of a semiconductor device on said wafer with a prober corresponding to an electrode pad of another semiconductor device on said wafer, whereby, said test apparatus for semiconductor device is able to test compound characteristics of a plurality of semiconductor devices.
Claim 4
Dependent Claim 136 words
A probe plate used for testing a semiconductor device having electrode pads formed on a semiconductor wafer, comprising: an electrically insulating base plate, having first and second main surfaces, having portions homogenous with the base plate and protruding from said first main surface in a disposition corresponding to said electrode pads on said semiconductor wafer and having through holes piercing through said first and said second main surfaces provided in the vicinity of said protruding parts; conductive layer parts formed on respective surfaces of said protruding portions on said base plate to serve as contact parts for making contact with said electrode pads; and a wiring layer formed on said second main surface of said base plate, said wiring layer being selectively connected to said conductive layer parts through said through holes of said base plate.
Claim 5
Dependent Claim 136 words
A probe plate used for testing a semiconductor device having electrode pads formed on a semiconductor wafer, comprising: an electrically insulating base plate, having first and second main surfaces, having portions homogenous with the base plate and protruding from said first main surface in a disposition corresponding to said electrode pads on said semiconductor wafer and having through holes piercing through said first and said second main surfaces provided in the vicinity of said protruding parts; conductive layer parts formed on respective surfaces of said protruding portions on said base plate to serve as contact parts for making contact with said electrode pads; and a wiring layer formed on said second main surface of said base plate, said wiring layer being selectively connected to said conductive layer parts through said through holes of said base plate.
Claim 6
Dependent Claim 13 words
A probe plate according to claim 3, wherein: said base plate is photo-transmitting.
Claim 7
Dependent Claim 36 words
A probe plate according to claim 3, wherein: said protruding parts on said base plate are formed by selectively removing from said base plate material thereof in parts which do not correspond to said electrode pads.
Claim 8
Dependent Claim 29 words
A probe plate according to claim 3, wherein: said protruding parts are formed to have a height greater than a height of said electrode pads of said semiconductor device.
Claim 9
Dependent Claim 57 words
A probe plate according to claim 3, further comprising: a connecting conductive layer formed on said first main surface of said base plate for electrically connecting said contact parts with said electrode pads of a semiconductor device on said semiconductor wafer and said contact parts with said electrode pads of another semiconductor device on said semiconductor wafer.

References Cited (Backward Citations)

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JPS63152243A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1994-10-07 1995-04-08 1995-10-08 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1998-10-07 1999-04-08 1999-10-08 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2002-10-07 2003-04-08 2003-10-08 $7700.00 Window Closed / Lapsed

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