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US4961958A Expired / Lapsed US ⏱️ 0.0 years remaining

Process for making diamond, and doped diamond films at low temperature

Assignee: CALIFORNIA 300 LAKESIDE DRIVE 22ND FLR OAKLAND CA 94612-3550, University of, Regents of
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Filing: 1989-06-30
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Granted: 1990-10-09
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Expires: 2009-06-30
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Abstract

Abstract A process and apparatus that may be used for the production of diamond and doped diamond films at high rates by activated reactive vapor deposition. Carbon is evaporated in a vacuum chamber in the presence of atomic hydrogen containing plasma to form diamond precursors which then deposit on a substrate located within the vacuum chamber. The substrate temperature is maintained at between about 20°-600° C.

Inventors

  • 👤 Chandra V. Desphandey
  • 👤 Rointan F. Bunshah
  • 👤 Hans J. Doerr

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-23 01:38
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/0605; C23C14/0611; C23C14/0021; Y; Y10; Y10S; Y10S427/00; Y10S427/103; Y10S427/106

Claims Analysis

Total Claims: 19
Claim 1
Independent Claim 124 words
A process for depositing a film consisting essentially of diamond on a substrate, said process comprising the steps of: supporting a substrate in a vacuum; evaporating a source of carbon to produce carbon atoms in a zone between the source of carbon and the substrate; introducing a hydrogen containing gas into said zone; accelerating electrons from an electron source into said zone to form a plasma of carbon atoms and hydrogen containing gas, which react to form carbon-hydrogen molecular precursors in said zone; depositing said precursors from said zone onto said carbon-hydrogen molecular substrate; and maintaining said substrate at a temperature of between about 20° to 600° C. to dissociate said deposited carbon-hydrogen molecular precursor molecules to form said film consisting essentially of diamond.
Claim 2
Dependent Claim 124 words
A process for depositing a film consisting essentially of diamond on a substrate, said process comprising the steps of: supporting a substrate in a vacuum; evaporating a source of carbon to produce carbon atoms in a zone between the source of carbon and the substrate; introducing a hydrogen containing gas into said zone; accelerating electrons from an electron source into said zone to form a plasma of carbon atoms and hydrogen containing gas, which react to form carbon-hydrogen molecular precursors in said zone; depositing said precursors from said zone onto said carbon-hydrogen molecular substrate; and maintaining said substrate at a temperature of between about 20° to 600° C. to dissociate said deposited carbon-hydrogen molecular precursor molecules to form said film consisting essentially of diamond.
Claim 3
Dependent Claim 15 words
A diamond deposition process according to claim 1 wherein said source of carbon is graphite.
Claim 4
Dependent Claim 17 words
A diamond deposition process according to claim 2 wherein said graphite is evaporated by an electron beam.
Claim 5
Dependent Claim 27 words
A diamond deposition process according to claim 1 wherein said hydrogen containing gas is selected from the group consisting of hydrogen, methane, ethane and other hydrocarbon gases.
Claim 6
Dependent Claim 37 words
A diamond deposition process according to claim 4 wherein said hydrogen containing gas is a mixture of hydrogen and hydrocarbon gases or a mixture of hydrogen and argon or a mixture of hydrogen, argon and hydrocarbon gases.
Claim 7
Dependent Claim 28 words
A diamond deposition process according to claim 1 wherein said substrate is selected from the group consisting of stainless steel, molybdenum, glass, quartz, silicon, sodium chloride and aluminum.
Claim 8
Dependent Claim 27 words
A diamond deposition process according to claim 1 wherein the partial pressure of said hydrogen containing gas is between about 2×10 -4 torr and 20×10 -3 torr.
Claim 9
Dependent Claim 15 words
A diamond deposition process according to claim 7 wherein said hydrogen containing gas is hydrogen.
Claim 10
Dependent Claim 27 words
A diamond deposition process according to claim 1 wherein the electrons which are deflected into said zone are produced by said electron source comprising a heated filament.
Claim 11
Dependent Claim 17 words
A diamond deposition process according to claim 9 wherein said filament is tungsten, tantalum, molybdenum or carbon.
Claim 12
Dependent Claim 23 words
A diamond deposition process according to claim 1 wherein said electrons are deflected into said zone by accelerating said electrons toward an anode.
Claim 13
Dependent Claim 23 words
A diamond deposition process according to claim 9 wherein the electrons generated by said filament are accelerated through said zone toward an anode.
Claim 14
Dependent Claim 18 words
A diamond deposition process according to claim 12 wherein the potential at said anode is about 80 volts.
Claim 15
Dependent Claim 25 words
A diamond deposition process according to claim 1 wherein said film is doped with p and n type dopants such as aluminum, lithium or boron.
Claim 16
Dependent Claim 18 words
A deposition process according to claim wherein a film consisting essentially of diamond cubic boron nitride is deposited.
Claim 17
Dependent Claim 28 words
A diamond deposition process according to claim 14 wherein a boron containing gas is introduced into said zone to provide a film consisting essentially of boron doped diamond.
Claim 18
Dependent Claim 33 words
A diamond deposition process according to claim 14 wherein vapor of metal organic compounds such as trimethyl aluminum are introduced into said zone to provide a film consisting essentially of aluminum doped diamond.
Claim 19
Dependent Claim 42 words
A diamond deposition process according to claim 1 wherein said hydrogen containing gas contains CH 4 , nitrogen and hydrogen and boric acid/boric oxide is co-evaporated with said carbon to thereby form a film consisting essentially of cubic boron nitride doped diamond.

References Cited (Backward Citations)

JPS5855319A Cited
JPS60171294A Cited
US4707384A Cited
JPS61122197A Cited
JPS61201693A Cited
US4725345A Cited
JPS62227763A Cited
US4816291A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1993-10-08 1994-04-09 1994-10-09 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1997-10-08 1998-04-09 1998-10-09 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2001-10-08 2002-04-09 2002-10-09 $7700.00 Window Closed / Lapsed

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