Circuit configuration and a method of testing storage cells

Claim 1

A circuit configuration for testing storage cells of an integrated semiconductor memory which includes a block in which the storage cells are disposed in the form of a matrix, word lines and internal bit lines for driving the storage cells, evaluator circuits each being assigned to a respective internal bit line, each internal bit line having first and second mutually complementary bit line halves, a pair of first and second external bit lines, transfer transistors connecting the first external bit line to each of the first internal bit line halves and connecting the second external bit line to each of the second internal bit line halves, and a bit line decoder assigned to the respective internal bit lines and connected to gates of the transfer transistors; the circuit configuration comprising a precharge device connected to said pair of external bit lines for precharging the pair of external bit lines to two mutually-complementary logic levels in a test mode, a discriminator circuit having means for sensing potentials, being connected to the pair of external bit lines and having an output for generating a fault signal indicating the occurrence of faults in test operation, the gates of all of the transfer transistors carrying a control potential, said fault signal being generated when the external bit line precharged to the higher level falls in level to at least a value which corresponds to the magnitude of a control potential on the gates of the transfer transistors minus a threshold voltage of the transfer transistors when data is read out from the memory cells during a test mode.

Claim 9

A method of testing storage cells of a semiconductor memory which includes a block in which the storage cells are disposed in the form of a matrix, word lines and internal bit lines for driving the storage cells, evaluator circuits each being assigned to a respective internal bit line, each of the internal bit lines having first and second mutually complementary bit line halves, first and second external bit lines, pairs of transfer transistors for connecting the first external bit line to each of the first internal bit line halves and connecting the second external bit line to each of the second internal bit line halves; said method of testing comprising the steps of: precharging said two external bit lines to mutually complementary logic levels in a test mode prior to the reading out of data from said storage cells, activating by means of a control signal said pair of transfer transistors, evaluating more than one of the storage cells connected to a word line with a discriminator circuit having means for sensing potentials connected to the two external bit lines, and generating a fault signal at an output of the discriminator circuit, said fault signal being generated when the external bit line precharged to the higher level falls in level to at least a value which corresponds to the magnitude of a control potential on the gates of the transfer transistors minus a threshold voltage of the transfer transistors when data is read out from the memory cells during a test mode.

Claim 10

A method of testing storage cells of a semiconductor memory which includes a block in which the storage cells are disposed in the form of a matrix, word lines and internal bit lines for driving the storage cells, evaluator circuits each being assigned to a respective internal bit line, each of the internal bit lines having first and second mutually complementary bit line halves, first and second external bit lines, pairs of transfer transistors for connecting the first external bit line to each of the first internal bit line halves and connecting the second external bit line to each of the second internal bit line halves; said method of testing comprising the steps of: precharging said two external bit lines to mutually complementary logic levels in a test mode prior to the reading out of data from said storage cells, activating by means of a control signal said pair of transfer transistors, evaluating more than one of the storage cells connected to a word line with a discriminator circuit having means for sensing potentials connected to the two external bit lines, and generating a fault signal at an output of the discriminator circuit, said fault signal being generated when the external bit line precharged to the higher level falls in level to at least a value which corresponds to the magnitude of a control potential on the gates of the transfer transistors minus a threshold voltage of the transfer transistors when data is read out from the memory cells during a test mode.