US4950622A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing a surface emitting type AlGaAs/GaAs semiconductor laser diode
Assignee: Korea Advanced Institute of Science and Technology
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Filing: 1989-04-27
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Granted: 1990-08-21
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Expires: 2009-04-27
Abstract
Abstract A method for manufacturing a surface emitting type AlGaAs/GaAs semiconductor LASER diode by a selective epitaxy method which is capable of forming naturally a 45° mirror reflective face during the epitaxy method itself. The method comprises the steps of forming a silicon oxide or silicon nitride layer on one side of a n-type single crystal GaAs substrate as a mask, removing the mask of the regions each for forming a 45° mirror reflective face and a LASER diode by use of a photolithography and a chemicaletching, forming the two layers by removing the photoresistor on the remaining mask after a selective epitaxy process and converting a slant face of the LASER diode into a vertical face, depositing a n-type metal layer on the other side of the substrate, and carrying out a heat treatment.
Inventors
- 👤 Young Se Kwon
- 👤 Tae Kyung Yoo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 12:29
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/18; H01S5/185; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/095
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
159 words
A method for manufacturing a surface emitting type AlGaAs/GaAs semiconductor LASER diode by a selective epitaxy process comprising the following steps of: forming a silicon oxide layer or a silicon nitride layer on one side of a n-type single crystal GaAs substrate so as to be a mask; removing said mask of regions each for forming a 45° mirror reflective face and a LASER diode by making use of a photolithography method and a chemical etching method; forming a triangular 45° mirror reflective face and a LASER diode by removing the photoresistor on the remaining mask after a selective epitaxy process and depositing a p-type metal layer on those layers; forming a slant face of the LASER diode into a vertical face under the state of said p type metal layer being made as a mask; and depositing a n-type metal layer on the other side of the n-type single crystal GaAs substrate, thereafter carrying out a heat treatment.
Claim 2
Independent Claim
159 words
A method for manufacturing a surface emitting type AlGaAs/GaAs semiconductor LASER diode by a selective epitaxy process comprising the following steps of: forming a silicon oxide layer or a silicon nitride layer on one side of a n-type single crystal GaAs substrate so as to be a mask; removing said mask of regions each for forming a 45° mirror reflective face and a LASER diode by making use of a photolithography method and a chemical etching method; forming a triangular 45° mirror reflective face and a LASER diode by removing the photoresistor on the remaining mask after a selective epitaxy process and depositing a p-type metal layer on those layers; forming a slant face of the LASER diode into a vertical face under the state of said p type metal layer being made as a mask; and depositing a n-type metal layer on the other side of the n-type single crystal GaAs substrate, thereafter carrying out a heat treatment.
Claim 3
Dependent Claim
33 words
The method as claimed in claim 1, wherein the width of the 45° mirror reflective face is 10-50 μm, and the width of the region for forming the LASER diode is 200-1000 μm.
Claim 4
Dependent Claim
49 words
The method as claimed in claim 1, wherein the angle of the mirror reflective face is obtained by making use of a mass-transport of a GaAs layer on a triangular AlGaAs layer during an epitaxy process when manufacturing the triangular 45° mirror reflective face by the selective epitaxy process.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-08-20 | 1994-02-19 | 1994-08-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-08-20 | 1998-02-19 | 1998-08-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-08-20 | 2002-02-19 | 2002-08-21 | $7700.00 | Window Closed / Lapsed |