US4908299A
Expired / Lapsed
US
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Pattern forming method
Assignee: Panasonic Holdings Corp
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Filing: 1988-12-30
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Granted: 1990-03-13
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Expires: 2008-12-30
Abstract
Abstract A method of forming any film pattern on an arbitrary substrate, more particularly, a pattern forming method which comprises selectively forming a film on an arbitrary substrate, by use of chemical reaction, and further, a method of forming a pattern of an organic film by selectively removing the organic film at a lower layer, with the pattern of the Langmuir-Blodgett's film containing Si as a mask.
Inventors
- 👤 Kazufumi Ogawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 14:39
CPC Classifications
B; B05; B05D; B05D1/00; B05D1/18; B05D1/185; B05D1/20; B05D1/202; B82; B82Y; B82Y30/00; B82Y40/00; G; G03; G03F; G03F7/00; G03F7/004; G03F7/075; G03F7/0757; G03F7/16; G03F7/165; G03F7/26; G03F7/265; H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6342; H10P14/6344; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
98 words
A pattern forming method comprising: a step of forming several layers of a sensitivee Langmuir-Blodgett film comprising a straight chain hydrocarbon containing Si atoms and responsive groups of acetylene, cyano or vinyl at one end of the hydrocarbon chain, on an arbitrary substrate covered with an organic film; a step of forming a pattern of the Langmuir-Blodgett film by selectively polymerizing or decomposing the sensitive Langmuir-Blodgett film by irradiation of energy beams, followed by development; and a step of selectively etching said organic film with plasma containing oxygen, with the pattern of said Langmuir-Blodgett film as a mask.
Claim 2
Dependent Claim
98 words
A pattern forming method comprising: a step of forming several layers of a sensitivee Langmuir-Blodgett film comprising a straight chain hydrocarbon containing Si atoms and responsive groups of acetylene, cyano or vinyl at one end of the hydrocarbon chain, on an arbitrary substrate covered with an organic film; a step of forming a pattern of the Langmuir-Blodgett film by selectively polymerizing or decomposing the sensitive Langmuir-Blodgett film by irradiation of energy beams, followed by development; and a step of selectively etching said organic film with plasma containing oxygen, with the pattern of said Langmuir-Blodgett film as a mask.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-03-12 | 1993-09-11 | 1994-03-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-03-12 | 1997-09-11 | 1998-03-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-03-12 | 2001-09-11 | 2002-03-13 | $7700.00 | Window Closed / Lapsed |