Method of making a multidimensional quantum-well array

Claim 2

Method of making a multidimensional quantum-well array from a single crystal wafer of gallium arsenide as the substrate including the steps of: (A) epitaxially depositing a film of about 5000 Å of gallium arsenide onto the top surface of the substrate, (B) depositing thereover a superlattice buffer of ten periods of approximately 100 Å of gallium arsenide and 15 Å of gallium aluminum arsenide, (C) epitaxially depositing about 5000 Å of gallium arsenide onto the superlattice buffer, (D) epitaxially depositing about 1000 Å of gallium aluminum arsenide thereover, (E) epitaxially depositing about 500 Å of gallium arsenide thereover, (F) depositing about 500 Å of silicon dioxide thereover, (G) spinning an electron-beam sensitive resist onto the silicon dioxide film to a thickness of about 1000 to 2000 Å and exposing the resist to an electron beam focused properly and of sufficient flux to produce an array of circularly exposed areas of about 500 Å diameter, (H) developing the exposed areas to open circular holes of about 500 Å in diameter on the surface of the deposited silicon dioxide, (I) etching circular holes in the silicon dioxide layer, (J) stripping the e-beam resist from the silica layer and placing the resulting sample in a suitable annealing furnace, and (K) heating the sample to about 900° C. for about 15 seconds and then cooling.

Claim 3

Method according to claim 1 wherein the electron beam sensitive resist is PMMA.

Claim 4

Method according to claim 1 wherein the circular holes are etched in the silicon dioxide layer by plasma techniques.

Claim 5

Method according to claim 1 wherein the circular holes are etched in the silicon dioxide layer by wet chemical techniques.

Claim 6

Method according to claim 1 wherein the annealing furnace is a rapid thermal annealer.

Claim 7

Method of making a multidimensional quantum-well array from a single crystal wafer of gallium arsenide as the substrate including the steps of: (A) epitaxially depositing a film of about 5000 Å of gallium arsenide onto the top surface of the substrate, (B) depositing thereover a superlattice buffer of ten periods of approximately 100 Å of gallium arsenide and 15 Å of gallium aluminum arsenide, (C) epitaxially depositing about 5000 Å of gallium arsenide onto the superlattice buffer, (D) epitaxially depositing about 1000 Å of gallium aluminum arsenide thereover, (E) epitaxially depositing about 500 Å of gallium arsenide thereover, (F) depositing about 1000 to 3000 Å of silicon dioxide thereover, (G) spinning an electron-beam resist of PMMA onto the silicon dioxide film to a thickness of about 500 Å and exposing the resist to an electron beam focused properly and a sufficient flux to produce an array of circularly exposed areas of about 500 Å diameter, (H) developing the exposed areas to open circular holes of about 500 Å diameter on the surface of the deposited silicon dioxide, (I) etching circular holes in the silicon dioxide layer by wet chemical techniques, (J) stripping the e-beam resist from the silica layer and placing the resulting sample in a rapid thermal annealer, and (K) heating the sample to about 900° C. for about 15 seconds and then cooling.

Claim 8

Method of making a multidimensional quantum-well array from a single crystal wafer of gallium arsenide as the substrate including the steps of: (A) epitaxially depositing a film of about 5000 Å of gallium arsenide onto the top surface of the substrate, (B) depositing thereover a superlattice buffer of ten periods of approximately 100 Å of gallium arsenide and 15 Å of gallium aluminum arsenide, (C) epitaxially depositing about 5000 Å of gallium arsenide onto the superlattice buffer, (D) epitaxially depositing about 1000 Å of gallium aluminum arsenide thereover, (E) epitaxially depositing about 500 Å of gallium arsenide thereover, (F) depositing about 1000 to 3000 Å of silicon dioxide thereover, (G) spinning an electron-beam resist of PMMA onto the silicon dioxide film to a thickness of about 500 Å and exposing the resist to an electron beam focused properly and a sufficient flux to produce an array of circularly exposed areas of about 500 Å diameter, (H) developing the exposed areas to open circular holes of about 500 Å diameter on the surface of the deposited silicon dioxide, (I) etching circular holes in the silicon dioxide layer by wet chemical techniques, (J) stripping the e-beam resist from the silica layer and placing the resulting sample in a rapid thermal annealer, and (K) heating the sample to about 900° C. for about 15 seconds and then cooling.