US4844945A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for producing patterns in dielectric layers formed by plasma enhanced chemical vapor deposition (PECVD)
Assignee: HP Inc
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Filing: 1988-05-18
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Granted: 1989-07-04
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Expires: 2008-05-18
Abstract
Abstract A process for forming a dielectric patterned layer of any desired geometry on a selected substrate which includes vapor depositing selected reactants on said substrate only in areas thereon which are coextensive with the surface area of an adjacent metal electrode pattern.
Inventors
- 👤 Eldurkar V. Bhaskar
- 👤 Marzio A. Leban
- 👤 Michael D. Angerstein
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:33
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/04; C23C16/047; C23C16/44; C23C16/50; C23C16/505; C23C16/509
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
110 words
A process for forming patterned insulating layers of a desired geometry on selected substrates which includes steps of: a. providing a patterned metal electrode adjacent to one surface of a chosen substrate, b. providing selected reactive gasses in the vicinity of said metal electrode and under controlled conditions of predetermined elevated temperature and pressure, and c. applying RF power to said electrode to dissociate and excite certain reactive species within said gasses and cause said species to react with one another and thereby deposit only on the area of said surface of said chosen substrate which is coextensive with one surface pattern of the metal in said patterned metal electrode.
Claim 2
Dependent Claim
110 words
A process for forming patterned insulating layers of a desired geometry on selected substrates which includes steps of: a. providing a patterned metal electrode adjacent to one surface of a chosen substrate, b. providing selected reactive gasses in the vicinity of said metal electrode and under controlled conditions of predetermined elevated temperature and pressure, and c. applying RF power to said electrode to dissociate and excite certain reactive species within said gasses and cause said species to react with one another and thereby deposit only on the area of said surface of said chosen substrate which is coextensive with one surface pattern of the metal in said patterned metal electrode.
Claim 3
Dependent Claim
55 words
A process for forming a dielectric patterned layer of a desired geometry on a selected substrate which includes exciting selected gas reactants with an RF field and vapor depositing certain ones of said selected reactants on said substrate only in areas thereon which are coextensive with a surface area of an adjacent metal electrode pattern.
Claim 4
Dependent Claim
55 words
A process for forming a dielectric patterned layer of a desired geometry on a selected substrate which includes exciting selected gas reactants with an RF field and vapor depositing certain ones of said selected reactants on said substrate only in areas thereon which are coextensive with a surface area of an adjacent metal electrode pattern.
Claim 5
Dependent Claim
19 words
The process defined in claim 2 wherein said vapor depositing is carried out using plasma enhanced chemical vapor deposition.
Claim 6
Dependent Claim
89 words
The process defined in claim 3 wherein said vapor deposition includes: a. providing selected reactive gasses in the vicinity of said metal electrode and under controlled conditions of predetermined elevated temperature and pressure, and b. applying RF power to said electrode to dissociate and excite certain reactive species within said gasses and cause said species to react with one another and thereby deposit only on the area of said surface of said chosen substrate which is coextensive with one surface pattern of the metal in said patterned metal electrode.
References Cited (Backward Citations)
US4550257A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-07-03 | 1993-01-02 | 1993-07-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-07-03 | 1997-01-02 | 1997-07-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-07-03 | 2001-01-02 | 2001-07-04 | $7700.00 | Window Closed / Lapsed |