US4816113A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of eliminating undesirable carbon product deposited on the inside of a reaction chamber
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1988-02-24
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Granted: 1989-03-28
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Expires: 2008-02-24
Abstract
Abstract The inside of a reaction chamber for CVD is cleaned after deposition of a carbon film. When crystalline carbon or diamond-like carbon is formed in the chamber, undesirable deposition occurs on the inside of the reaction chamber. The sticky carbon deposition is removed by etching, making use of oxygen or oxygen compound gas rather than fluorine or chlorine compound gas which tends to damage the inside of the reaction chamber.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 13:48
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/24; B; B01; B01J; B01J19/00; B01J19/0006; B01J19/002; B01J19/0026; C23C16/00; C23C16/22; C23C16/26; C23C16/44; C23C16/4401; C23C16/4405; C23G; C23G5/00
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
73 words
An etching method for removing carbon deposition sticking on the inside of the reaction chamber of a deposition apparatus after completing the deposition of a material consisting mainly of carbon on a substrate, said method comprising: evacuating said reaction chamber; inputting oxygen or oxygen compound gas as the etchant gas to said reaction chamber; and inputting an electromagnetic power to said reaction chamber to produce a plasma gas derived from said etchant gas.
Claim 2
Dependent Claim
73 words
An etching method for removing carbon deposition sticking on the inside of the reaction chamber of a deposition apparatus after completing the deposition of a material consisting mainly of carbon on a substrate, said method comprising: evacuating said reaction chamber; inputting oxygen or oxygen compound gas as the etchant gas to said reaction chamber; and inputting an electromagnetic power to said reaction chamber to produce a plasma gas derived from said etchant gas.
Claim 3
Dependent Claim
11 words
The method of claim 1 wherein said carbon material is diamond.
Claim 4
Dependent Claim
11 words
The method of claim 1 wherein said carbon material is DLC.
Claim 5
Dependent Claim
11 words
The method of claim 1 wherein said electromagnetic power is microwave.
Claim 6
Dependent Claim
24 words
The method of claim 2 wherein said microwave is inputted to said etchant gas while said etchant gas is subjected to a magnetic field.
Claim 7
Dependent Claim
17 words
The method of claim 5 wherein the pressure of said etchant gas is 0.1 to 10 Torr.
Claim 8
Dependent Claim
13 words
The method of claim 1 wherein said electromagnetic power is an r.f. power.
Claim 9
Dependent Claim
17 words
The method of claim 7 wherein the pressure of said etching gas is 0.001 to 0.5 Torr.
Claim 10
Dependent Claim
16 words
The method of claim 8 wherein the temperature is chosen between room temperature and 450° C.
Claim 11
Dependent Claim
21 words
The method of claim 6 wherein said etching is carried out while the inside of said chamber is irradiated with light.
Claim 12
Dependent Claim
12 words
The method of claim 10 wherein said light is an ultraviolet light.
Claim 13
Dependent Claim
17 words
The method of claim 3 wherein the inside of said reaction chamber is heated to 500°-1000° C.
Claim 14
Dependent Claim
15 words
The method of claim 1 wherein the etching is carried out before another carbon deposition.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-03-27 | 1992-09-26 | 1993-03-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-03-27 | 1996-09-26 | 1997-03-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-03-27 | 2000-09-26 | 2001-03-28 | $7700.00 | Window Closed / Lapsed |