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US4795656A Expired / Lapsed US ⏱️ 0.0 years remaining

Cluster ion plating method for producing electrically conductive carbon film

Assignee: National Institute of Advanced Industrial Science and Technology
•
Filing: 1988-04-14
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Granted: 1989-01-03
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Expires: 2008-04-14
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Abstract

Abstract A carbon film having a large electrical conductivity is produced at a comparatively low substrate temperature by a method comprising forming the carbon film from a hydrocarbon by an ion beam method and heating the substrate at a temperature of 400 DEG C. to 1,200 DEG C.

Inventors

  • 👤 Akira Mizoguchi
  • 👤 Jun Shioya
  • 👤 Yoichi Yamaguchi
  • 👤 Yoshinobu Ueba
  • 👤 Hironaga Matsubara

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-23 13:06
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/221; C23C14/06; C23C14/0605

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 68 words
A method for producing an electrically conductive carbon film on a substrate comprising (a) ionizing a solid or liquid hydrocarbon to form a cluster ion beam which is being jetted towards a substrate by discharged electrons, (b) accelerating generated hydrocarbon ions in an electric field, and (c) depositing the hydrocarbon ions on a substrate which is heated at a temperture of 400 ° C. to 1,200 ° C.
Claim 2
Independent Claim 68 words
A method for producing an electrically conductive carbon film on a substrate comprising (a) ionizing a solid or liquid hydrocarbon to form a cluster ion beam which is being jetted towards a substrate by discharged electrons, (b) accelerating generated hydrocarbon ions in an electric field, and (c) depositing the hydrocarbon ions on a substrate which is heated at a temperture of 400 ° C. to 1,200 ° C.
Claim 3
Dependent Claim 20 words
The method according to claim 1, wherein the substrate is heated at a temperature of 400 ° to 1,000° C.
Claim 4
Dependent Claim 20 words
The method according to claim 2, wherein the substrate is heated at a temperature of 400 ° to 800° C.
Claim 5
Dependent Claim 27 words
The method according to claim 1, wherein a voltage of the electric field for accelerating the hydrocarbon ions is in the range from 1 to 3 kV.
Claim 6
Dependent Claim 19 words
The method according to claim 1, wherein the hydrocarbon is one having a hydrogen/carbon ratio of lower than 2.
Claim 7
Dependent Claim 13 words
The method according to claim 5, wherein the hydrocarbon is an aromatic hydrocarbon.
Claim 8
Dependent Claim 12 words
The method according to claim 6, wherein the aromatic hydrocarbon is benzene.
Claim 9
Dependent Claim 13 words
The method according to claim 1, wherein the substrate is a silicon wafer.
Claim 10
Dependent Claim 13 words
The method according to claim 1, wherein the substrate is a quartz substrate.

References Cited (Backward Citations)

US4217855A Cited
DD138678A1 Cited
GB2114963A Cited
JPS60103099A Cited
JPS60127293A Cited
US4571348A Cited
JPS61170570A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-01-03 1992-07-04 1993-01-03 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-01-03 1996-07-04 1997-01-03 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-01-03 2000-07-04 2001-01-03 $7700.00 Window Closed / Lapsed

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