Optical logic and memory apparatus

Claim 2

Polarization-bistable apparatus comprising a semiconductor laser operating near the polarization transition temperature wherein said laser operates in a pure TM oo mode at low injection currents and switches operation to a pure TE oo mode at high injection currents, having hysteresis loops with a high contrast ratio in its polarization-resolved power versus current characteristic while total power exhibits only slight change in hysteresis, the switching behavior of the TE oo mode being complementary to that of the TM oo mode; means for biasing said laser for operation within said hysteresis loops; and means for applying a current pulse in one direction to said laser to cause said laser to provide a TE oo mode laser output, and for applying a current pulse in the opposite direction to switch to a TM oo mode.

Claim 3

The apparatus as recited in claim 1 wherein said laser is an InGaAsP/InP laser; near the polarization transistion temperature includes a range from 186.7° K. to below 195.2° K.; and said hysteresis loops have widths in the range of about 1 mA to 23 mA.

Claim 4

The apparatus as recited in claim 2 wherein said laser operates at a temperature of 193.0° K. and said loops have a width of 3.5 mA.

Claim 5

An optical S-R flip-flop comprising a semiconductor laser operating near the polarization transition temperature wherein said laser operates in a pure TM oo mode at low injection currents and switches operation to a pure TE oo mode at high injection currents, having large hysteresis loops with a high contrast ratio in its polarization-resolved power versus current characteristic while total power exhibits only slight change in hysteresis, the switching behavior of the TE oo mode being complementary to that of the TM oo mode; means for biasing said laser for operation within said hysteresis loops; first mcans, coupled across a voltage source of one polarity and said laser, for causing said laser to switch to said TE oo mode operation following application of an optical signal S thereto; and second means, coupled across a voltage source of the opposite polarity and said laser, for causing said laser to switch to said TM oo mode operation following application of an optical signal R thereto.

Claim 6

An optical S-R flip-flop comprising a semiconductor laser operating near the polarization transition temperature wherein said laser operates in a pure TM oo mode at low injection currents and switches operation to a pure TE oo mode at high injection currents, having large hysteresis loops with a high contrast ratio in its polarization-resolved power versus current characteristic while total power exhibits only slight change in hysteresis, the switching behavior of the TE oo mode being complementary to that of the TM oo mode; means for biasing said laser for operation within said hysteresis loops; first mcans, coupled across a voltage source of one polarity and said laser, for causing said laser to switch to said TE oo mode operation following application of an optical signal S thereto; and second means, coupled across a voltage source of the opposite polarity and said laser, for causing said laser to switch to said TM oo mode operation following application of an optical signal R thereto.

Claim 7

The S-R flip-flop as recited in claim 4 further comprising third means coupled between said first means and said laser, and coupled between said second means and said laser, for providing a conductive path through said third means upon said third means receiving an optical clock pulse.

Claim 8

The S-R flip-flop as recited in claim 5 wherein said laser is an InGaAsP/InP laser; near the polarization transistion temperature includes a range from 186.7° K. to below 195.2° K.; said hysteresis loops have widths in the range of about 1 mA to 23 mA; and said third means includes a high-speed optoelectronic switch.

Claim 9

The S-R flip-flop as recited in claim 6 wherein said first means includes a high-speed optoelectronic switch; said second means includes a high-speed optoelectronic switch; said laser operates at a temperature of 193.0° K.; and said loops have a width of 3.5 mA.

Claim 10

The S-R flip-flop as recited in claim 6 wherein said first means includes a photodetector; said second means includes a phototdetector; said third means includes a serially connected amplifier; said laser operates at a temperature of 193.0° K.; and said loops have a width of 3.5 mA.

Claim 11

An optical D flip-flop comprising a semiconductor laser operating near the polarization transition temperature wherein said laser operates in a pure TM oo mode at low injection currents and switches operation to a pure TE oo mode at high injection currents, having large hysteresis loops with a high contrast ratio in its polarization-resolved power versus current characteristic while total power exhibits only slight change in hysteresis, the switching behavior of the TE oo mode being complementary to that of the TM oo mode; means for biasing said laser for operation within said hysteresis loops; first means, coupled across a voltage source of one polarity and a junction point, for providing a voltage of said one polarity to said junction point upon application of an optical signal D to said first means; second means coupled across a voltage source of the opposite polarity and said junction point, for providing a voltage of said opposite polarity to said junction point upon the absence of an optical signal D to said first means; and third means, coupled between said junction point and said laser, for providing a conductive path through said third means upon said third means receiving an optical clock pulse.

Claim 12

An optical D flip-flop comprising a semiconductor laser operating near the polarization transition temperature wherein said laser operates in a pure TM oo mode at low injection currents and switches operation to a pure TE oo mode at high injection currents, having large hysteresis loops with a high contrast ratio in its polarization-resolved power versus current characteristic while total power exhibits only slight change in hysteresis, the switching behavior of the TE oo mode being complementary to that of the TM oo mode; means for biasing said laser for operation within said hysteresis loops; first means, coupled across a voltage source of one polarity and a junction point, for providing a voltage of said one polarity to said junction point upon application of an optical signal D to said first means; second means coupled across a voltage source of the opposite polarity and said junction point, for providing a voltage of said opposite polarity to said junction point upon the absence of an optical signal D to said first means; and third means, coupled between said junction point and said laser, for providing a conductive path through said third means upon said third means receiving an optical clock pulse.

Claim 13

The D flip-flop as recited in claim 9 wherein said laser is an InGaAsP/InP laser; near the polarization transition temperature includes a range from 186.7° K. to below 195.2° K.; said hysteresis loops have widths in the range of about 1 mA to 23 mA; and said third means includes a high-speed optoelectronic switch.

Claim 14

The D flip-flop as recited in claim 10 wherein said first means includes a high-speed electronic switch; said second means includes a resistance; said laser operates at a temperature of 193.0° K.; and said loops have a width of 3.5 mA.

Claim 15

The D flip-flop as recited in claim 10 wherein said first means includes a photodetector; said second means includes a resistance; said third means includes a serially connected amplifier; said laser operates at a temperature of 193.0° K.; and said loops have a width of 3.5 mA.

Claim 16

An optical J-K flip-flop comprising a semiconductor laser operating near the polarization transition temperature wherein said laser operates in a pure TM oo mode at low injection currents and switches operation to a pure TM oo mode at high injection currents, having large hysteresis loops with a high contrast ratio in its polarization-resolved power versus current characteristic while total power exhibits only slight change in hysteresis, the switching behavior of the TE oo mode being complementary to that of the TM oo mode; means for biasing said laser for operation within said hysteresis loops; first means, coupled between a junction point and said laser, for providing a conductive path through said first means upon said first means receiving an optical clock pulse; second means, coupled between a voltage source of one polarity and said junction point, for providing a conductive path when said laser operates in said TM oo mode; third means, coupled between a voltage source of the opposite polarity and said junction point, for providing a conductive path when said laser operates in said TE oo mode; fourth means, coupled serially with said second means, for causing said laser (if previously in the TM oo mode) to switch to said TE oo mode upon said fourth means receiving an optical signal J thereto and said first means receiving an optical clock pulse; and fifth means, coupled serially with said third means, for causing said laser (if previously in the TE oo mode) to switch to said TM oo mode upon said third means receiving an optical signal K thereto and said first means receiving an optical clock pulse.

Claim 17

An optical J-K flip-flop comprising a semiconductor laser operating near the polarization transition temperature wherein said laser operates in a pure TM oo mode at low injection currents and switches operation to a pure TM oo mode at high injection currents, having large hysteresis loops with a high contrast ratio in its polarization-resolved power versus current characteristic while total power exhibits only slight change in hysteresis, the switching behavior of the TE oo mode being complementary to that of the TM oo mode; means for biasing said laser for operation within said hysteresis loops; first means, coupled between a junction point and said laser, for providing a conductive path through said first means upon said first means receiving an optical clock pulse; second means, coupled between a voltage source of one polarity and said junction point, for providing a conductive path when said laser operates in said TM oo mode; third means, coupled between a voltage source of the opposite polarity and said junction point, for providing a conductive path when said laser operates in said TE oo mode; fourth means, coupled serially with said second means, for causing said laser (if previously in the TM oo mode) to switch to said TE oo mode upon said fourth means receiving an optical signal J thereto and said first means receiving an optical clock pulse; and fifth means, coupled serially with said third means, for causing said laser (if previously in the TE oo mode) to switch to said TM oo mode upon said third means receiving an optical signal K thereto and said first means receiving an optical clock pulse.

Claim 18

The J-K flip-flop recited in claim 13 wherein said laser is an InGaAsP/InP laser; near the polarization transition temperature includes a range from 186.7° K. to below 195.2° K.; said hysteresis loops have a width in the range of about 1 mA to 23 mA; and said first means includes a high-speed optoelectronic switch.

Claim 19

The J-K flip-flop recited in claim 14 wherein each of said second, third, fourth, and fifth means includes a respective high-speed optoelectronic switch; said laser operates at a temperature of 193.0° K.; and said loops have a width of 2.5 mA.

Claim 20

An optical T flip-flop comprising a semiconductor laser operating near the polarization transition temperature wherein said laser operates in a pure TM oo mode at low injection currents and switches operation to a pure TE oo mode at high injection currents, having large hysteresis loops with a high contrast ratio in its polarization-resolved power versus current characteristic while total power exhibits only slight change in hysteresis, the switching behavior of the TE oo mode being complementary to that of the TM oo mode; means for biasing said laser for operation within said hysteresis loops; first means, coupled across a voltage source of one polarity and a junction point, for providing a conductive path thereacross when said laser operates in the TM oo mode; second means, coupled across a voltage source of the opposite polarity and said junction point, for providing a conductive path thereacross when said laser operates in the TE oo mode; and third and fourth means serially coupled across said junction point and said laser; said third means being conductive upon receipt of an optical T pulse applied thereto; and said fourth means being conductive upon receipt of an optical clock pulse applied thereto.

Claim 21

An optical T flip-flop comprising a semiconductor laser operating near the polarization transition temperature wherein said laser operates in a pure TM oo mode at low injection currents and switches operation to a pure TE oo mode at high injection currents, having large hysteresis loops with a high contrast ratio in its polarization-resolved power versus current characteristic while total power exhibits only slight change in hysteresis, the switching behavior of the TE oo mode being complementary to that of the TM oo mode; means for biasing said laser for operation within said hysteresis loops; first means, coupled across a voltage source of one polarity and a junction point, for providing a conductive path thereacross when said laser operates in the TM oo mode; second means, coupled across a voltage source of the opposite polarity and said junction point, for providing a conductive path thereacross when said laser operates in the TE oo mode; and third and fourth means serially coupled across said junction point and said laser; said third means being conductive upon receipt of an optical T pulse applied thereto; and said fourth means being conductive upon receipt of an optical clock pulse applied thereto.

Claim 22

The T flip-flop as recited in claim 16 wherein said laser is an InGaAsP/InP laser; near the polarization transition temperature includes a range from 186.7° K. to below 195.2° K.; said hysteresis loops have widths in the range of about 1 mA to 23 mA; and said fourth means includes a high-speed optoelectronic switch.

Claim 23

The T flip-flop as recited in claim 17 wherein each of said first, second, and third means includes a respective high-speed optoelectronic switch; said laser operates at a temperature of 193.0° K.; and said loops have a width of 3.5 mA.

Claim 24

An optical TE-AND (TM-NAND) gate comprising a semiconductor laser diode operating at the polarization transition temperature wherein said laser diode operates in a pure TM mode at low injection currents and operates in a pure TE mode at high injection currents, said laser diode abruptly changing its modal state at a polarization-switching current level, I c ; means for biasing said laser diode just below said polarization-switching current level I c ; and a pair of optoelectronic switching means coupled across said laser diode and a voltage source of such polarity that when both of said pair of switching means are conductive, the injection current level is higher than I c and said laser diode switches into the TE polarization, whereby said laser diode provides a TE output representing the logic function A·B and said laser diode provides a TM output representing the logic function A·B, whereby one of said switching means is normally non-conductive but is rendered conductive upon receiving a light signal representing the function A, and whereby the other of said switching means is normally non-conductive but is rendered conductive upon receiving a light signal representing the function B.

Claim 25

An optical TE-AND (TM-NAND) gate comprising a semiconductor laser diode operating at the polarization transition temperature wherein said laser diode operates in a pure TM mode at low injection currents and operates in a pure TE mode at high injection currents, said laser diode abruptly changing its modal state at a polarization-switching current level, I c ; means for biasing said laser diode just below said polarization-switching current level I c ; and a pair of optoelectronic switching means coupled across said laser diode and a voltage source of such polarity that when both of said pair of switching means are conductive, the injection current level is higher than I c and said laser diode switches into the TE polarization, whereby said laser diode provides a TE output representing the logic function A·B and said laser diode provides a TM output representing the logic function A·B, whereby one of said switching means is normally non-conductive but is rendered conductive upon receiving a light signal representing the function A, and whereby the other of said switching means is normally non-conductive but is rendered conductive upon receiving a light signal representing the function B.

Claim 26

The optical TE-AND (TM-NAND) gate as recited in claim 19 wherein said laser diode is an InGaAsP/InP laser diode; said polarization transition temperature is 194.2° K.; and said polarization switching current level I c is 15 mA.

Claim 27

The optical TE-AND (TM-NAND) gate as recited in claim 19 wherein said optoelectronic switching means are photodetectors.

Claim 28

An optical TE-NAND (TM-AND) gate comprising a semiconductor laser diode operating at the polarization transition temperature wherein said laser diode operates in a pure TM mode at low injection currents and operates in a pure TE mode at high injection current, said laser diode abruptly changing its modal state at a polarization-switching current level I c ; means for biasing said laser diode at a current level above I c ; and a pair of optoelectronic switching means coupled across said laser diode and a voltage source of such polarity that when both of said pair of switching means are conductive, the injection current level is lower than I c and said laser diode switches into the TM polarization,, whereby said laser diode provides a TE output representing the logic function A·B and said laser diode provides a TM output representing the logic function A·B, whereby one of said switching means is normally non-conductive but is rendered conductive upon receiving a light signal representing the function A, and whereby the other of said switching means is normally non-conductive but is rendered conductive upon receiving a light signal representing the function B.

Claim 29

An optical TE-NAND (TM-AND) gate comprising a semiconductor laser diode operating at the polarization transition temperature wherein said laser diode operates in a pure TM mode at low injection currents and operates in a pure TE mode at high injection current, said laser diode abruptly changing its modal state at a polarization-switching current level I c ; means for biasing said laser diode at a current level above I c ; and a pair of optoelectronic switching means coupled across said laser diode and a voltage source of such polarity that when both of said pair of switching means are conductive, the injection current level is lower than I c and said laser diode switches into the TM polarization,, whereby said laser diode provides a TE output representing the logic function A·B and said laser diode provides a TM output representing the logic function A·B, whereby one of said switching means is normally non-conductive but is rendered conductive upon receiving a light signal representing the function A, and whereby the other of said switching means is normally non-conductive but is rendered conductive upon receiving a light signal representing the function B.

Claim 30

The optical TE-NAND (TM-AND) gate as recited in claim 22 wherein said laser diode is an InGaAsP/InP laser diode; said polarization transition temperature is 194.2° K.; and said polarization switching current level I c is 15 mA.

Claim 31

The optical TE-NAND (TM-AND) gate as recited in claim 22 wherein said optoelectronic switching means are photodetectors.

Claim 32

An optical TE-OR (TM-NOR) circuit comprising a semiconductor laser diode operating at the polarization transition temperature wherein said laser diode operates in a pure TM mode at low injection currents and operates in a pure TE mode at high injection currents, said laser diode abruptly changing its modal state at a polarization-switching current level I c ; means for biasing said laser diode at a current level just below I c ; and a pair of optoelectronic switching means coupled in parallel across said laser diode and a voltage source of such value that when either one of said switching means is conductive, the injection current level is higher than I c and said laser diode switches into the TE polarization, said laser diode providing a TE output representing the logic function A+B and said laser diode providing a TM output representing the logic function A+B, whereby one of said switching means is normally non-conductive but is rendered conductive upon receiving a light signal representing the function A, and whereby the other of said switching means is normally non-conductive but is rendered conductive upon receiving a light signal representing the function B.

Claim 33

An optical TE-OR (TM-NOR) circuit comprising a semiconductor laser diode operating at the polarization transition temperature wherein said laser diode operates in a pure TM mode at low injection currents and operates in a pure TE mode at high injection currents, said laser diode abruptly changing its modal state at a polarization-switching current level I c ; means for biasing said laser diode at a current level just below I c ; and a pair of optoelectronic switching means coupled in parallel across said laser diode and a voltage source of such value that when either one of said switching means is conductive, the injection current level is higher than I c and said laser diode switches into the TE polarization, said laser diode providing a TE output representing the logic function A+B and said laser diode providing a TM output representing the logic function A+B, whereby one of said switching means is normally non-conductive but is rendered conductive upon receiving a light signal representing the function A, and whereby the other of said switching means is normally non-conductive but is rendered conductive upon receiving a light signal representing the function B.

Claim 34

The optical TE-OR (TM-NOR) circuit as recited in claim 25 wherein said optoelectronic switching means are photodetectors.

Claim 35

The optical TE-OR (TM-NOR) circuit as recited in claim 25 wherein said laser diode is an InGaAsP/InP laser diode; said polarization transition temperature is 194.2° K.; and said polarization switching current level I c is 15 mA.

Claim 36

An optical TE-NOR (TM-OR) circuit comprising a semiconductor laser diode operating at the polarization transition temperature wherein said laser diode operates in a pure TM mode at low injection currents and operates in a pure TE mode at high injection currents, said laser diode abruptly changing its operative mode at a polarization-switching current level I c ; means for biasing said laser diode at a current level just above I c ; and a pair of optoelectronic switching means coupled in parallel across said laser diode and a voltage source of such value that when either one of said switching means is conductive, the injection current is lower than I c and said laser diode switches into the TM mode, whereby said laser diode provides a TE output representing the logic function A+B and said laser diode provides a TM ouput representing the logic function A+B, whereby one of said switching means is normally non-conductive but is rendered conductive upon receiving a light signal representing the function A, and whereby the other of said switching means is normally non-conductive but is rendered conductive upon receiving a light signal representing the function B.

Claim 37

An optical TE-NOR (TM-OR) circuit comprising a semiconductor laser diode operating at the polarization transition temperature wherein said laser diode operates in a pure TM mode at low injection currents and operates in a pure TE mode at high injection currents, said laser diode abruptly changing its operative mode at a polarization-switching current level I c ; means for biasing said laser diode at a current level just above I c ; and a pair of optoelectronic switching means coupled in parallel across said laser diode and a voltage source of such value that when either one of said switching means is conductive, the injection current is lower than I c and said laser diode switches into the TM mode, whereby said laser diode provides a TE output representing the logic function A+B and said laser diode provides a TM ouput representing the logic function A+B, whereby one of said switching means is normally non-conductive but is rendered conductive upon receiving a light signal representing the function A, and whereby the other of said switching means is normally non-conductive but is rendered conductive upon receiving a light signal representing the function B.

Claim 38

The optical TE-NOR (TM-OR) circuit as recited in claim 28 wherein said optoelectronic switching means are photodetectors.

Claim 39

The optical TE-NOR (TM-OR) circuit as recited in claim 28 wherein said laser diode is an InGaAsP/InP laser diode; said polarization transition temperature is 194.2° K.; and said polarization switching current level I c is 15 mA.

Claim 40

An optical logic-memory apparatus a semiconductor laser diode operating at the polarization transition temperature as a logic device wherein said laser diode operates in a pure TM mode at low injection currents and operates in a pure TE mode at high injection currents, said laser diode abruptly changing its operative mode at a polarization-switching current level I c , and operating near the polarization transition temperature wherein said laser diode operates in a pure TM oo mode at low injection currents and switches operation to a pure TE oo mode at high injection currents having large hysteresis loops with a high contrast ratio in its polarization-resolved power versus current characteristic while total power exhibits only slight change in hysteresis, the switching behavior of the TE mode being complementary to that of the TM mode; means for biasing said laser diode; and optoelectronic means coupled to said laser diode for affecting the modal state of said laser diode.

Claim 41

An optical logic-memory apparatus a semiconductor laser diode operating at the polarization transition temperature as a logic device wherein said laser diode operates in a pure TM mode at low injection currents and operates in a pure TE mode at high injection currents, said laser diode abruptly changing its operative mode at a polarization-switching current level I c , and operating near the polarization transition temperature wherein said laser diode operates in a pure TM oo mode at low injection currents and switches operation to a pure TE oo mode at high injection currents having large hysteresis loops with a high contrast ratio in its polarization-resolved power versus current characteristic while total power exhibits only slight change in hysteresis, the switching behavior of the TE mode being complementary to that of the TM mode; means for biasing said laser diode; and optoelectronic means coupled to said laser diode for affecting the modal state of said laser diode.

Claim 42

The optical logic/memory apparatus as recited in claim 31 wherein said laser diode is an InGaAsP/InP laser diode; said polarization transition temperature is 194.2° K.; and near the polarization transition temperature includes a range from 186.7° K. to below 195.2° K.