US4599135A
Expired / Lapsed
US
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Thin film deposition
Assignee: Hitachi Ltd
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Filing: 1984-09-28
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Granted: 1986-07-08
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Expires: 2004-09-28
Abstract
Abstract In a thin film deposition apparatus, means for depositing a film on a substrate and means for etching the deposited film to make flat the surface thereof, are provided in a reaction vessel independently of each other. This apparatus can rapidly deposit the film without rising the temperature of the substrate excessively. Further, since the deposition means and etching means are independent of each other, the deposition of a film on the substrate and the planarization of the surface of the deposited film can be achieved under various conditions.
Inventors
- 👤 Sukeyoshi Tsunekawa
- 👤 Yoshio Homma
- 👤 Hiroshi Morisaki
- 👤 Sadayuki Okudaira
- 👤 Kiichiro Mukai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 18:18
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; C23C16/44; C23C16/448; C23C16/452
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
63 words
A thin film deposition apparatus for depositing a film in a reaction vessel, comprising: deposition means provided in the reaction vessel for depositing a film on a substrate by plasma excited CVD; and etching means provided in said reaction vessel for dry-etching the film deposited by said deposition means, said etching means being provided in said reaction vessel independently of said deposition means.
Claim 2
Dependent Claim
63 words
A thin film deposition apparatus for depositing a film in a reaction vessel, comprising: deposition means provided in the reaction vessel for depositing a film on a substrate by plasma excited CVD; and etching means provided in said reaction vessel for dry-etching the film deposited by said deposition means, said etching means being provided in said reaction vessel independently of said deposition means.
Claim 3
Dependent Claim
21 words
A thin film deposition apparatus according to claim 1, wherein said plasma excited CVD is plasma excited CVD using microwave power.
Claim 4
Dependent Claim
22 words
A thin film deposition apparatus according to claim 1, wherein said plasma excited CVD is plasma excited CVD using radio frequency power.
Claim 5
Dependent Claim
24 words
A thin film deposition apparatus according to claim 3, wherein said deposited film is etched by sputtering using a hot filament type ion source.
Claim 6
Dependent Claim
19 words
A thin film deposition apparatus according to claim 1, wherein said etching means etches said deposited film by sputtering.
Claim 7
Dependent Claim
24 words
A thin film deposition apparatus according to claim 5, wherein said deposited film is etched by sputtering using a saddle field type ion source.
Claim 8
Dependent Claim
24 words
A thin film deposition apparatus according to claim 5, wherein said deposited film is etched by sputtering using a hot filament type ion source.
Claim 9
Dependent Claim
18 words
A thin film deposition apparatus according to claim 1, further comprising a rotatable susceptor for holding said substrate.
Claim 10
Dependent Claim
17 words
A thin film deposition apparatus according to claim 8, wherein said susceptor is provided with watercooling means.
Claim 11
Dependent Claim
18 words
A thin film deposition apparatus according to claim 8, wherein a single substrate is held on said susceptor.
Claim 12
Dependent Claim
19 words
A thin film deposition apparatus according to claim 8, wherein a plurality of substrates are held on said susceptor.
Claim 13
Dependent Claim
22 words
A thin film deposition apparatus according to claim 8, wherein said susceptor for holding said substrate is applied with a high-frequency voltage.
Claim 14
Independent Claim
53 words
A method of depositing a film on a substrate, comprising the steps of: (a) forming vapor phase deposition material and vapor phase etching material at independent portions; and (b) directing said deposition material and said etching material simultaneously or alternately on a substrate, whereby deposition proceeds while deposited material being partly etched away.
Claim 15
Independent Claim
53 words
A method of depositing a film on a substrate, comprising the steps of: (a) forming vapor phase deposition material and vapor phase etching material at independent portions; and (b) directing said deposition material and said etching material simultaneously or alternately on a substrate, whereby deposition proceeds while deposited material being partly etched away.
Claim 16
Dependent Claim
18 words
A method according to claim 13, wherein said deposition material is a charged particle beam of one polarity.
Claim 17
Dependent Claim
14 words
A method according to claim 13, wherein said etching material is a particle beam.
Claim 18
Dependent Claim
26 words
A method according to claim 13, wherein said substrate is being rotated and said deposition material and said etching material are directed alternately on the substrate.
Claim 19
Dependent Claim
28 words
A method according to claim 16, wherein said deposition material is a flow of particles formed in microwave plasma end extracted therefrom through a grid of predetermined potential.
Claim 20
Dependent Claim
44 words
A method according to claim 16, wherein said etching material is a flow of argon ions and the film deposited is silicon oxide, whereby the etching rate of the argon ions is higher at angled portions than at flat portions of the deposited film.
Claim 21
Dependent Claim
61 words
A thin deposition for depositing a film in a reaction vessel, comprising: deposition means provided in the reaction vessel for depositing a film on a substrate; and etching means provided in said reaction vessel for dry-etching the deposited film by sputtering using a microwave discharge ion source, said etching means being provided in said reaction vessel independently of said deposition means.
Claim 22
Dependent Claim
61 words
A thin deposition for depositing a film in a reaction vessel, comprising: deposition means provided in the reaction vessel for depositing a film on a substrate; and etching means provided in said reaction vessel for dry-etching the deposited film by sputtering using a microwave discharge ion source, said etching means being provided in said reaction vessel independently of said deposition means.
Claim 23
Dependent Claim
21 words
A thin film deposition apparatus according to claim 19 wherein said deposition means deposits said film on said substrate by sputtering.
Claim 24
Dependent Claim
23 words
A thin film deposition apparatus according to claim 19, wherein said deposition means deposits said film on said substrate by plasma excited CVD.
Claim 25
Dependent Claim
21 words
A thin film deposition apparatus according to claim 21, wherein said plasma excited CVD is plasma excited CVD using microwave power.
Claim 26
Dependent Claim
22 words
A thin film deposition apparatus according to claim 21, wherein said plasma excited CVD is plasma excited CVD using radio frequency power.
Claim 27
Dependent Claim
18 words
A thin film deposition apparatus according to claim 19, further comprising a rotatable susceptor for holding said substrate.
Claim 28
Dependent Claim
17 words
A thin film deposition apparatus according to claim 24, wherein said suceptor is provided with water-cooling means.
Claim 29
Dependent Claim
18 words
A thin film deposition apparatus according to claim 24, wherein a single substrate is held on said susceptor.
Claim 30
Dependent Claim
19 words
A thin film deposition apparatus according to claim 24, wherein a plurality of substrates are held on said susceptor.
Claim 31
Dependent Claim
22 words
A thin film deposition apparatus according to claim 24, wherein said susceptor for holding said substrate is applied with a high-frequency voltage.
References Cited (Backward Citations)
US3563809A
Cited
JPS5621836A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-07-07 | 1990-01-06 | 1990-07-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-07-07 | 1994-01-06 | 1994-07-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-07-07 | 1998-01-06 | 1998-07-08 | $7700.00 | Window Closed / Lapsed |