US4583492A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High rate, low temperature silicon deposition system
Assignee: RTX Corp
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Filing: 1983-12-19
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Granted: 1986-04-22
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Expires: 2003-12-19
Abstract
Abstract A radio frequency, plasma-enhanced, vapor deposition reactor has apparatus (3-7) for providing a flow of silane in an inert gas carrier, a deposition chamber (20) formed between a pair of flow restrictors (18, 27) and an RF coil (22) for providing inductive coupling of RF power (24) for plasma excitation, disposed downstream of a fixture (8) for holding the substrate upon which amorphous silicon is to be disposed. A baffle (30) provides diversion of the gas flow toward a gravity trap chamber (31), thereby collecting some particulates and prolonging the cycle time before plugging of the vacuum pump (7) can occur.
Inventors
- 👤 Melvyn E. Cowher
- 👤 Alexander J. Shuskus
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:11
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/3244; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/505; C23C16/507
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
136 words
A RF plasma-enhanced vapor deposition reactor for depositing silicon comprising: a reaction tube having an inlet and an outlet; means for providing a flow of gaseous silane solution into said reaction tube at said inlet and for exhausting gases from said reaction tube at said outlet; a pair of flow-reducing inserts spaced apart along said reaction tube, to define a deposition chamber; mounting means for disposing a substrate upon which silicon is to be deposited within said deposition; a RF induction coil disposed about said reaction tube entirely downstream of said mounting means; and a gravity trap chamber disposed between said deposition chamber and said outlet and a baffle disposed in the reaction tube at said gravity trap chamber so as to divert said flow first toward said gravity trap chamber and then to said outlet.
Claim 2
Dependent Claim
136 words
A RF plasma-enhanced vapor deposition reactor for depositing silicon comprising: a reaction tube having an inlet and an outlet; means for providing a flow of gaseous silane solution into said reaction tube at said inlet and for exhausting gases from said reaction tube at said outlet; a pair of flow-reducing inserts spaced apart along said reaction tube, to define a deposition chamber; mounting means for disposing a substrate upon which silicon is to be deposited within said deposition; a RF induction coil disposed about said reaction tube entirely downstream of said mounting means; and a gravity trap chamber disposed between said deposition chamber and said outlet and a baffle disposed in the reaction tube at said gravity trap chamber so as to divert said flow first toward said gravity trap chamber and then to said outlet.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-04-21 | 1989-10-21 | 1990-04-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-04-21 | 1993-10-21 | 1994-04-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-04-21 | 1997-10-21 | 1998-04-22 | $7700.00 | Window Closed / Lapsed |