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US4568632A Expired / Lapsed US ⏱️ 0.0 years remaining

Patterning of polyimide films with far ultraviolet light

Assignee: International Business Machines Corp
•
Filing: 1983-12-14
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Granted: 1986-02-04
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Expires: 2003-12-14
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Abstract

Abstract A method is described for photoetching polyimides efficiently, and without the need for any chemical development steps. At least 1000Å of the polyimide are removed by irradiation of the polyimide with ultraviolet radiation having wavelengths less than 220 nm. To enhance the process, the power density of the radiation is greater than about 60 mJ/cm 2 . The presence of an atmosphere containing oxygen enhances the etch rate, although photoetching will occur in other atmospheres.

Inventors

  • 👤 Samuel E. Blum
  • 👤 Karen L. Holloway
  • 👤 Rangaswamy Srinivasan

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-23 14:54
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/039; Y; Y10; Y10S; Y10S430/00; Y10S430/146

Claims Analysis

Total Claims: 25
Claim 1
Independent Claim 30 words
A method for etching polyimides comprising photoetching said polyimide to a depth of at least 1000 Å by irradiating the polyimide with UV radiation having wavelenths less than 220 nm.
Claim 2
Independent Claim 30 words
A method for etching polyimides comprising photoetching said polyimide to a depth of at least 1000 Å by irradiating the polyimide with UV radiation having wavelenths less than 220 nm.
Claim 3
Dependent Claim 17 words
The method of claim 1, where said radiation is directed through a mask before striking the polyimide.
Claim 4
Dependent Claim 15 words
The method of claim 1, where said polyimide is a layer located on a substrate.
Claim 5
Dependent Claim 18 words
The method of claim 3, where said photoetching occurs until said polyimide is etched completely to said substrate.
Claim 6
Dependent Claim 14 words
The method of claim 1, where said photoetching occurs in an atmosphere including oxygen.
Claim 7
Independent Claim 56 words
A method for etching polyimide, including the step of directing ultraviolet radiation having wavelengths less than 220 nm onto a surface of said polyimide, said radiation being produced by a laser providing output UV radiation having intensities greater than about 60 mJ/cm 2 , said radiation etching said polyimide to a depth greater than 1000 Å.
Claim 8
Independent Claim 56 words
A method for etching polyimide, including the step of directing ultraviolet radiation having wavelengths less than 220 nm onto a surface of said polyimide, said radiation being produced by a laser providing output UV radiation having intensities greater than about 60 mJ/cm 2 , said radiation etching said polyimide to a depth greater than 1000 Å.
Claim 9
Dependent Claim 20 words
The method of claim 6, where said laser is an argon fluoride laser producing an output at 193 nm wavelength.
Claim 10
Dependent Claim 14 words
The method of claim 6, where said photoetching occurs in an atmosphere containing oxygen.
Claim 11
Dependent Claim 17 words
The method of claim 6, where said UV radiation is applied to selected areas of said polyimide.
Claim 12
Dependent Claim 14 words
The method of claim 6, where said photoetching occurs in an atmosphere of air.
Claim 13
Independent Claim 43 words
A method for etching polyimide, including the step of irradiating the surface of said polyimide with ultraviolet radiation of wavelengths less than 220 nm to photoetch said polyimide to a depth greater than 1000 Å, said photoetching occurring in an atmosphere containing oxygen.
Claim 14
Independent Claim 43 words
A method for etching polyimide, including the step of irradiating the surface of said polyimide with ultraviolet radiation of wavelengths less than 220 nm to photoetch said polyimide to a depth greater than 1000 Å, said photoetching occurring in an atmosphere containing oxygen.
Claim 15
Dependent Claim 14 words
The method of claim 11, where said UV radiation is produced by a laser.
Claim 16
Dependent Claim 17 words
The method of claim 11, where said UV radiation is produced by a low pressure mercury lamp.
Claim 17
Dependent Claim 10 words
The method of claim 11, where said atmosphere is air.
Claim 18
Dependent Claim 20 words
The method of claim 11, where said UV radiation is incident on selected areas of the surface of said polyimide.
Claim 19
Dependent Claim 15 words
The method of claim 11, where said polyimide is a layer located on a substrate.
Claim 20
Dependent Claim 15 words
The method of claim 16, where said polyimide layer is etched completely to said substrate.
Claim 21
Dependent Claim 12 words
The method of claim 11, where said radiation is applied as pulses.
Claim 22
Dependent Claim 11 words
The method of claim 11, where said radiation is applied continuously.
Claim 23
Independent Claim 79 words
A method for etching polyimide, comprising the steps of directing ultraviolet radiation to selected areas of a surface of a layer of polyimide located on a substrate to photoetch said areas, said radiation being produced by a laser and having wavelengths less than 220 nm, the atmosphere in which said polyimide is located containing oxygen, and continuing the irradiation of said polyimide with said ultraviolet radiation until at least 1000 Å of said polyimide is photoetched by said radiation.
Claim 24
Independent Claim 79 words
A method for etching polyimide, comprising the steps of directing ultraviolet radiation to selected areas of a surface of a layer of polyimide located on a substrate to photoetch said areas, said radiation being produced by a laser and having wavelengths less than 220 nm, the atmosphere in which said polyimide is located containing oxygen, and continuing the irradiation of said polyimide with said ultraviolet radiation until at least 1000 Å of said polyimide is photoetched by said radiation.
Claim 25
Dependent Claim 18 words
The method of claim 20, where said radiation has an intensity at least about 100 mJ/cm 2 .

References Cited (Backward Citations)

US4247496A Cited
US4357203A Cited
US4417948A Cited
US4414059A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-02-03 1989-08-05 1990-02-04 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-02-03 1993-08-05 1994-02-04 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-02-03 1997-08-05 1998-02-04 $7700.00 Window Closed / Lapsed

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