Process for producing a semiconductor laser with several independent wavelengths and laser obtained by this process

Claim 1

A process for producing a laser emitting two wavelengths, comprising the steps of: providing a semiconductor substrate; producing on said substrate by epitaxy a first double heterostructure comprising a first confinement layer, a first active layer having a first composition, a second confinement layer, a first contact layer and a first upper metal coating; etching said first double heterostructure up to said substrate through a mask having openings in the form of strips, this etching operation leading to strips of said double heterostructure, said strips being separated by etched portions; producing on said substrate in the said etched portions a second double heterostructure with a third confinement layer, a second active layer having a second composition different from the first, a fourth confinement layer, a second contact layer and a second upper metal coating, said layers of said first double heterostructure and said layers of said second double heterostructure having the same height with respect to said substrate; carrying out a first etching of a first groove between a strip of said first heterostructure and said second double heterostructure, said groove being etched up to said first and second active layers; and undergoing a proton bombardment into said first groove.