US4534099A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making multilayer photoelectrodes and photovoltaic cells
Assignee: BP Corp North America Inc
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Filing: 1984-09-18
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Granted: 1985-08-13
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Expires: 2004-09-18
Abstract
Abstract A corrosion-resistant, multilayer photoelectrode for use in a photoelectrochemical cell and a process for producing said photoelectrode by preparing an effective layer of an insulator material on a base semiconductor and depositing a layer of conducting material on said layer of insulating material.
Inventors
- 👤 Arthur T. Howe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 19:27
CPC Classifications
H; H01; H01G; H01G9/00; H01G9/20; C; C25; C25B; C25B1/00; C25B1/50; C25B1/55; Y; Y02; Y02P; Y02P20/00; Y02P20/10; Y02P20/133; Y10; Y10S; Y10S148/00; Y10S148/02; Y10S148/118
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
88 words
A process for the preparation of a multilayer structure which is suitable for use as either a photovoltaic cell or a photoelectrode in a photoelectrochemical cell which comprises: (a) forming a layer of insulator material on an n-type semiconductor, wherein said insulator material is negatively charged as a consequence of the presence of aliovalent dopant ions and has a thickness which is effective to permit electron tunneling through it; (b) forming a layer of conducting material on said layer of insulator material; and (c) annealing the resulting structure.
Claim 2
Dependent Claim
88 words
A process for the preparation of a multilayer structure which is suitable for use as either a photovoltaic cell or a photoelectrode in a photoelectrochemical cell which comprises: (a) forming a layer of insulator material on an n-type semiconductor, wherein said insulator material is negatively charged as a consequence of the presence of aliovalent dopant ions and has a thickness which is effective to permit electron tunneling through it; (b) forming a layer of conducting material on said layer of insulator material; and (c) annealing the resulting structure.
Claim 3
Dependent Claim
93 words
The process of claim 1 which further includes the preparation of an ohmic contact on the back face of said semiconductor comprising the steps of: (a) depositing on said semiconductor a first layer comprising a compound which contains at least one first element in anionic form which is selected from the group consisting of P, As, and Sb, and at least one second element in cationic form which is selected from the group consisting of V, Ti, Zr, Hf, Nb, and Ta; and (b) depositing a second conducting layer on said first layer.
Claim 4
Dependent Claim
12 words
The process of claim 2 wherein said first layer comprises vanadium phosphide.
Claim 5
Dependent Claim
33 words
The process of claim 2 wherein said second layer is selected from the group consisting of Pt, Pd, Au, W, Ta, MoSi 2 , doped SnO 2 , doped oxides, and conducting organics.
Claim 6
Dependent Claim
19 words
The process of claim 1 wherein said insulator material comprises an insulator other than an oxide of said semiconductor.
Claim 7
Dependent Claim
13 words
The process of claim 1 wherein said conducting material comprises a noble metal.
Claim 8
Dependent Claim
14 words
The process of claim 1 wherein said conducting material is substantially transparent to light.
Claim 9
Dependent Claim
12 words
The process of claim 1 wherein said conducting material consists of platinum.
Claim 10
Dependent Claim
24 words
The process of claim 8 wherein said layer of conducting material has a thickness in the range from about 10 to about 200 Angstroms.
Claim 11
Dependent Claim
16 words
The process of claim 1 wherein said semiconductor is silicon and said conducting material is platinum.
Claim 12
Dependent Claim
24 words
The process of claim 10 wherein said layer of conducting material has a thickness in the range from about 10 to about 50 Angstroms.
Claim 13
Dependent Claim
23 words
The process of claim 1 wherein said layer of insulator material has a thickness in the range from about 10 to 25 Angstroms.
References Cited (Backward Citations)
US4084044A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-08-12 | 1989-02-11 | 1989-08-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-08-12 | 1993-02-11 | 1993-08-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-08-12 | 1997-02-11 | 1997-08-13 | $7700.00 | Window Closed / Lapsed |