Multilayer photoelectrodes and photovoltaic cells

Claim 2

A multilayer structure which is suitable for use as either a photovoltaic cell or a photoelectrode in a photoelectrochemical cell which comprises an n-type semiconductor layer, a layer of insulator material which is in direct contact with said semiconductor layer, and a layer of conducting material which is in direct contact with said layer of insulator material, wherein said insulator material is negatively charged as a consequence of the presence of aliovalent dopant ions and has a thickness which is effective to permit electron tunneling between said semiconductor and conducting material layers.

Claim 3

The multilayer structure of claim 1 wherein said layer of insulator material has a thickness of from 5 to about 25 Angstrom units.

Claim 4

The multilayer structure of claim 1 wherein said insulator material comprises at least one insulating metal oxide which is doped with cations of at least one lower valent metal.

Claim 5

The multilayer structure of claim 3 wherein said insulator material comprises a material selected from the group consisting of magnesium oxide which is doped with cations of at least one alkali metal and aluminum oxide which is doped with cations of at least one alkaline earth metal.

Claim 6

A photoelectrochemical cell comprising in combination a redox-electrolyte solution, a multilayer photoelectrode and a counterelectrode; wherein said multilayer photoelectrode comprises an n-type base semiconductor layer, a layer of insulator material which is in direct contact with the semiconductor layer and a layer of conducting material which is in direct contact with said layer of insulator material; and wherein said insulator material is negatively charged as a consequence of the presence of aliovalent dopant ions and has a thickness which is effective to permit electron tunneling between said semiconductor and conducting material layers.

Claim 7

A photoelectrochemical cell comprising in combination a redox-electrolyte solution, a multilayer photoelectrode and a counterelectrode; wherein said multilayer photoelectrode comprises an n-type base semiconductor layer, a layer of insulator material which is in direct contact with the semiconductor layer and a layer of conducting material which is in direct contact with said layer of insulator material; and wherein said insulator material is negatively charged as a consequence of the presence of aliovalent dopant ions and has a thickness which is effective to permit electron tunneling between said semiconductor and conducting material layers.

Claim 8

The photoelectrochemical cell of claim 5 wherein said conducting material comprises a noble metal.

Claim 9

The photoelectrochemical cell of claim 5 wherein said conducting material is substantially transparent to light.

Claim 10

The photoelectrochemical cell of claim 5 wherein said layer of insulator material has a thickness of from 5 to about 25 Angstrom units.

Claim 11

The photoelectrochemical cell of claim 5 wherein said insulator material comprises an insulator other than an oxide of said base semiconductor.

Claim 12

The photoelectrochemical cell of claim 5 wherein said insulator material comprises at least one insulating metal oxide which is doped with cations of at least one lower valent metal.

Claim 13

The photoelectrochemical cell of claim 10 wherein said insulator material comprises a material selected from the group consisting of magnesium oxide which is doped with cations of at least one alkali metal and aluminum oxide which is doped with cations of at least one alkaline earth metal.

Claim 14

The photoelectrochemical cell of claim 11 wherein said semiconductor is silicon and said conducting material is platinum.

Claim 15

The photoelectrochemical cell of claim 5 wherein said multilayer photoelectrode comprises a second semiconductor layer in communication with said base semiconductor, said second semiconductor layer having an optical band gap complementary to the optical band gap of said base semiconductor, and said base semiconductor and said second semiconductor layer separated by a matching structural means for alleviating lattice mismatch there between.

Claim 16

The photoelectrochemical cell of claim 5 wherein said counterelectrode comprises a second photoelectrode comprising at least one base semiconductor.

Claim 17

The photoelectrochemical cell of claim 14 wherein said multilayer photoelectrode is immersed in a first redox-electrolyte solution and said counterelectrode is immersed in a second redox-electrolyte solution and said first and said second redox-electrolyte solutions are separated by an ion conducting membrane.

Claim 18

The photoelectrochemical cell of claim 15 further including at least a second electrode in said first redox-electrolyte solution and at least a second electrode in said second redox-electrolyte solution.

Claim 19

The photoelectrochemical cell of claim 5 wherein said redox-electrolyte solution comprises an aqueous solution having at least one redox couple selected from the group consisting of iodine-iodide, bromine/bromide, and sulfide/polysulfide.

Claim 20

The photoelectrochemical cell of claim 5 wherein said base semiconductor is at least one member selected from the group consisting of Si and GaAs, said insulator material is at least one member selected from the group consisting of oxides, carbides, and nitrides, and said conducting material is at least one member selected from the group consisting of noble metals, conducting oxides, and LaB 6 .

Claim 21

The photoelectrochemical cell of claim 5 wherein said base semiconductor is an n-type semiconductor and an ohmic contact is attached to the back face of said base semiconductor, wherein said ohmic contact comprises a first layer of a compound containing at least one first element in anionic form which is selected from the group consisting of phosphorus, arsenic and antimony, and at least one second element in cationic form which is selected from the group consisting of vanadium, titanium, zirconium, hafnium, niobium and tantalum, and wherein said ohmic contact also comprises a second layer of a conducting material.

Claim 22

The photoelectrochemical cell of claim 5 wherein said base semiconductor is an n-type semiconductor and an ohmic contact is attached to the back face of said base semiconductor, wherein said ohmic contact comprises a layer of a lanthanide boride on the base semiconductor and an air-stable conducting layer on said boride layer.

Claim 25

The method as set forth in claim 21 wherein said insulator material comprises a material selected from the group consisting of magnesium oxide which is doped with cations of at least one alkali metal and aluminum oxide which is doped with cations of at least one alkaline earth metal.

Claim 26

A process for storage of electrical power comprising the steps of: (a) illuminating with electromagnetic radiation the photoelectrode of a photoelectrochemical cell comprising in combination a multilayer photoelectrode in contact with a first redox-electrolyte, a counterelectrode in contact with a second redox-electrolyte, and an ion-conducting membrane separating said first and second redox-electrolytes, wherein said multilayer photoelectrode comprises an n-type base semiconductor layer, a layer of insulator material which is in direct contact with the semiconductor layer and a layer of conducting material which is in direct contact with said layer of insulator material, and wherein said insulator material is negatively charged as a consequence of the presence of aliovalent dopant ions and has a thickness which is effective to permit electron tunneling between said semiconductor and conducting material layers, (b) generating an electrical current in an external circuit between said photoelectrode and said counterelectrode and generating an ionic current in said first and said second electrolyte between said multilayer photoelectrode and said counterelectrode, and (c) driving the reaction of the first redox couple in said first redox-electrolyte and the second redox couple in said second redox-electrolyte to store chemical energy for later discharge as electrical power.

Claim 27

A process for storage of electrical power comprising the steps of: (a) illuminating with electromagnetic radiation the photoelectrode of a photoelectrochemical cell comprising in combination a multilayer photoelectrode in contact with a first redox-electrolyte, a counterelectrode in contact with a second redox-electrolyte, and an ion-conducting membrane separating said first and second redox-electrolytes, wherein said multilayer photoelectrode comprises an n-type base semiconductor layer, a layer of insulator material which is in direct contact with the semiconductor layer and a layer of conducting material which is in direct contact with said layer of insulator material, and wherein said insulator material is negatively charged as a consequence of the presence of aliovalent dopant ions and has a thickness which is effective to permit electron tunneling between said semiconductor and conducting material layers, (b) generating an electrical current in an external circuit between said photoelectrode and said counterelectrode and generating an ionic current in said first and said second electrolyte between said multilayer photoelectrode and said counterelectrode, and (c) driving the reaction of the first redox couple in said first redox-electrolyte and the second redox couple in said second redox-electrolyte to store chemical energy for later discharge as electrical power.

Claim 28

The process as set forth in claim 23 wherein said insulator material comprises a material selected from the group consisting of magnesium oxide which is doped with cations of at least one alkali metal and aluminum oxide which is doped with cations of at least one alkaline earth metal.