Patent US2622623A successfully refreshed from Google Patents.
US4479455A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process gas introduction and channeling system to produce a profiled semiconductor layer
Assignee: United Solar Systems Corp
•
Filing: 1983-03-14
•
Granted: 1984-10-30
•
Expires: 2003-03-14
Abstract
Abstract A process gas introduction and channeling system for use with apparatus adapted to produce photovoltaic devices by depositing semiconductor layers onto continuously moving substrate material. The deposition apparatus preferably includes at least one deposition chamber having (1) a region in which process gases are decomposed and (2) a manifold from which process gases are introduced to flow through the downstream decomposition region. In the preferred embodiment, as the process gases flow through the decomposition region, they are disassociated and recombined under the influence of an electromagnetic field. The species and combinations of process gases thus formed are deposited onto the substrate material. The process gas introduction and channeling system described herein, is adapted to direct the process gases introduced into each of the at least one deposition chamber to pass through the decomposition region thereof in a direction substantially parallel to the direction of travel of the substrate material, whereby substantially uniform semiconductor layers are deposited atop the entire surface of the substrate material.
Inventors
- 👤 Joachim Doehler
- 👤 Kevin R. Hoffman
- 👤 Timothy D. Laarman
- 👤 Gary M. DiDio
- 👤 Therese McDonough
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 10:37
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/54; C23C16/545; H; H10; H10P; H10P95/00; C23C16/455; C23C16/45563; C23C16/45578; C23C16/50
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
204 words
In vacuum deposition apparatus adapted to deposit semiconductor layers, said apparatus including at least one dedicated deposition chamber through which substrate material is adapted to continuously travel; a source of process gases including at least one precursor noncrystalline semiconductor material; means for introducing said process gases into each of said at least one deposition chamber; and means for decomposing the process gases in a decomposition region formed between said substrate material and said decomposing means, whereby a noncrystalline semiconductor layer is continuously deposited onto said substrate material; the improvement comprising, in combination; channeling means for directing the process gases introduced into each of the at least one deposition chamber to pass through the decomposition region thereof in a direction substantially parallel to the direction of travel of the substrate material; a source of precursor profiling gas; and means for introducing said dopant profiling gas into the decomposition region of the deposition chamber in a direction of flow opposite the direction of flow of the process gases therethrough, whereby the profiling gas is adapted to diffuse through at least a portion of the decomposition region for depositing a profiled noncrystalline semiconductor layer, said semiconductor layer being substantially uniform across the width of the substrate material.
Claim 2
Dependent Claim
204 words
In vacuum deposition apparatus adapted to deposit semiconductor layers, said apparatus including at least one dedicated deposition chamber through which substrate material is adapted to continuously travel; a source of process gases including at least one precursor noncrystalline semiconductor material; means for introducing said process gases into each of said at least one deposition chamber; and means for decomposing the process gases in a decomposition region formed between said substrate material and said decomposing means, whereby a noncrystalline semiconductor layer is continuously deposited onto said substrate material; the improvement comprising, in combination; channeling means for directing the process gases introduced into each of the at least one deposition chamber to pass through the decomposition region thereof in a direction substantially parallel to the direction of travel of the substrate material; a source of precursor profiling gas; and means for introducing said dopant profiling gas into the decomposition region of the deposition chamber in a direction of flow opposite the direction of flow of the process gases therethrough, whereby the profiling gas is adapted to diffuse through at least a portion of the decomposition region for depositing a profiled noncrystalline semiconductor layer, said semiconductor layer being substantially uniform across the width of the substrate material.
Claim 3
Dependent Claim
43 words
Apparatus as in claim 1, wherein the channeling means is adapted to direct the process gases to flow through the decomposition region of each of the at least one deposition chamber in a direction opposite to the direction of travel of substrate material.
Claim 4
Dependent Claim
43 words
Apparatus as in claim 1, wherein the channeling means is adapted to direct the process gases to flow through the decomposition region of each of the at least one deposition chamber in the same direction as the direction of travel of substrate material.
Claim 5
Dependent Claim
34 words
Apparatus as in claim 1, wherein heating means are provided, said heating means operatively disposed upstream of the decomposition means for warming the process gases prior to the passage thereof into said decomposition region.
Claim 6
Dependent Claim
41 words
Apparatus as in claim 1, wherein the at least one deposition chamber includes an upstream decomposition region adapted to (1) collect impurities from the process gases and contaminants from the chamber walls, and (2) initially disassociate and recombine the process gases.
Claim 7
Dependent Claim
253 words
In glow discharge deposition apparatus which includes at least one triad of deposition chambers through each chamber of which substrate material is adapted to continuously travel; the second chamber of each triad is adapted to deposit an intrinsic semiconductor layer onto the substrate material, and the first and third chambers of each triad adapted to deposit semiconductor layers of opposite conductivities thereonto; a source of process gases including at least one precursor noncrystalline semiconductor material; means for introducing said process gases into each chamber of the at least one triad; and means for decomposing the process gases in a decomposition region formed between the substrate material and the decomposing means, whereby a noncrystalline semiconductor layer is continuously deposited onto the substrate material in each deposition chamber of the at least one triad; the improvement comprising, in combination: channeling means for directing the process gases introduced into each deposition chamber of the at least one triad to pass through the decomposition regions thereof in a direction substantially parallel to the direction of travel of the substrate material; a source of precursor profiling gas; and means for introducing said dopant profiling gas into the decomposition region of at least the intrinsic deposition chamber in a direction of flow opposite the direction of flow of the process gases therethrough, whereby the profiling gas is adapted to diffuse through at least a portion of the decomposition region for depositing a profiled noncrystalline semiconductor layer, said semiconductor layer being substantially uniform across the width of the substrate material.
Claim 8
Dependent Claim
253 words
In glow discharge deposition apparatus which includes at least one triad of deposition chambers through each chamber of which substrate material is adapted to continuously travel; the second chamber of each triad is adapted to deposit an intrinsic semiconductor layer onto the substrate material, and the first and third chambers of each triad adapted to deposit semiconductor layers of opposite conductivities thereonto; a source of process gases including at least one precursor noncrystalline semiconductor material; means for introducing said process gases into each chamber of the at least one triad; and means for decomposing the process gases in a decomposition region formed between the substrate material and the decomposing means, whereby a noncrystalline semiconductor layer is continuously deposited onto the substrate material in each deposition chamber of the at least one triad; the improvement comprising, in combination: channeling means for directing the process gases introduced into each deposition chamber of the at least one triad to pass through the decomposition regions thereof in a direction substantially parallel to the direction of travel of the substrate material; a source of precursor profiling gas; and means for introducing said dopant profiling gas into the decomposition region of at least the intrinsic deposition chamber in a direction of flow opposite the direction of flow of the process gases therethrough, whereby the profiling gas is adapted to diffuse through at least a portion of the decomposition region for depositing a profiled noncrystalline semiconductor layer, said semiconductor layer being substantially uniform across the width of the substrate material.
Claim 9
Dependent Claim
38 words
Apparatus as in claim 6, wherein the channeling means is adapted to direct the process gases to flow through the decomposition region of each deposition chamber in a direction opposite to the direction of travel of substrate material.
Claim 10
Dependent Claim
38 words
Apparatus as in claim 6, wherein the channeling means is adapted to direct the process gases to flow through the decomposition region of each deposition chamber in the same direction as the direction of travel of substrate material.
Claim 11
Dependent Claim
37 words
Apparatus as in claim 6, wherein heating means are provided, said heating means operatively disposed upstream of the decomposition region of each chamber for warming the process gases prior to the passage thereof into said decomposition regions.
Claim 12
Dependent Claim
41 words
Apparatus as in claim 6, wherein each of the deposition chambers further includes an upstream decomposition region adapted to (1) collect impurities from the process gases and contaminants from the chamber walls, and (2) initially disassociate and recombine the process gases.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-10-30 | 1988-04-30 | 1988-10-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-10-30 | 1992-04-30 | 1992-10-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-10-30 | 1996-04-30 | 1996-10-30 | $7700.00 | Window Closed / Lapsed |