US4476620A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a gallium nitride light-emitting diode
Assignee: Panasonic Holdings Corp
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Filing: 1983-03-31
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Granted: 1984-10-16
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Expires: 2003-03-31
Abstract
Abstract The substrate of a gallium nitride light-emitting diode is made rough at given positions on the surface thereof, or an insulating film strip pattern is attached on the surface of the substrate prior to growing an n-type conductive gallium nitride layer and a semi-insulating gallium nitride layer thereon. As a result, high conductivity regions are formed in the semi-insulating layer at positions corresponding to the rough surfaces or the insulating film strip pattern in such a manner that each of the high conductivity region extends from the n-type conductive layer to the upper surface of the semi-insulating layer so as to function as a conductor to be connected to an electrode. In the same manner similar high conductive regions are made along kerf portions in a diode wafer, preventing each diode chip from being damaged on cutting.
Inventors
- 👤 Yoshimasa Ohki
- 👤 Yukio Toyoda
- 👤 Hiroyuki Kobayashi
- 👤 Isamu Akasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 11:42
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/8215; H10H20/817; H10H20/818; H10H20/01; H10H20/032; H10H20/83; H10H20/831; H10H20/85; H10H20/857; Y; Y10; Y10S; Y10S438/00; Y10S438/964; Y10S438/969
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
165 words
A method of manufacturing a light-emitting diode chip, comprising the steps of: (a) making rough areas in one surface of a single crystal substrate in such a manner that at least one rough area is in a substrate region which will be each diode chip substrate; (b) growing a conductive gallium nitride layer on said surface of said substrate; (c) growing a semi-insulating gallium nitride layer on said conductive gallium nitride layer; (d) simultaneously growing high conductivity regions in said semi-insulating gallium nitride layer at positions corresponding to said rough areas in such a manner that each of said high conductivity regions extends from said conductive gallium nitride layer to the upper surface of said semi-insulating gallium nitride layer; (e) forming first and second electrodes respectively on one of said high conductivity regions and on said semi-insulating layer of each diode chip region; and (f) cutting a light-emitting diode wafer, which has been manufactured in the above steps, to separate each diode chip from another.
Claim 2
Independent Claim
165 words
A method of manufacturing a light-emitting diode chip, comprising the steps of: (a) making rough areas in one surface of a single crystal substrate in such a manner that at least one rough area is in a substrate region which will be each diode chip substrate; (b) growing a conductive gallium nitride layer on said surface of said substrate; (c) growing a semi-insulating gallium nitride layer on said conductive gallium nitride layer; (d) simultaneously growing high conductivity regions in said semi-insulating gallium nitride layer at positions corresponding to said rough areas in such a manner that each of said high conductivity regions extends from said conductive gallium nitride layer to the upper surface of said semi-insulating gallium nitride layer; (e) forming first and second electrodes respectively on one of said high conductivity regions and on said semi-insulating layer of each diode chip region; and (f) cutting a light-emitting diode wafer, which has been manufactured in the above steps, to separate each diode chip from another.
Claim 3
Dependent Claim
37 words
A method of manufacturing a light-emitting diode chip as claimed in claim 1, wherein said step of making a rough area is performed by making one or more grooves by means of a scriber or a dicer.
Claim 4
Dependent Claim
26 words
A method of manufacturing a light-emitting diode chip as claimed in claim 1, wherein said step of making a rough area is performed by ultrasonic machining.
Claim 5
Dependent Claim
25 words
A method of manufacturing a light-emitting diode chip as claimed in claim 1, wherein said step of making a rough area is performed by sandblasting.
Claim 6
Independent Claim
169 words
A method of manufacturing a light-emitting diode chip, comprising the steps of: (a) forming an insulating film strip pattern on one surface of a single crystal substrate in such a manner that at least one strip is in a substrate region which will be each diode chip substrate; (b) growing a conductive gallium nitride layer on said surface of said substrate; (c) growing a semi-insulating gallium nitride layer on said conductive gallium nitride layer; (d) simultaneously growing high conductivity regions in said semi-insulating gallium nitride layer at positions corresponding to said insulating film strip pattern in such a manner that each of said high conductivity regions extends from said conductive gallium nitride layer to the upper surface of said semi-insulating gallium nitride layer; (e) forming first and second electrodes respectively on one of said high conductivity regions and on said semi-insulating layer at each diode chip region; and (f) cutting a light-emitting diode wafer, which has been manufactured in the above steps, to separate each diode chip from another.
Claim 7
Independent Claim
169 words
A method of manufacturing a light-emitting diode chip, comprising the steps of: (a) forming an insulating film strip pattern on one surface of a single crystal substrate in such a manner that at least one strip is in a substrate region which will be each diode chip substrate; (b) growing a conductive gallium nitride layer on said surface of said substrate; (c) growing a semi-insulating gallium nitride layer on said conductive gallium nitride layer; (d) simultaneously growing high conductivity regions in said semi-insulating gallium nitride layer at positions corresponding to said insulating film strip pattern in such a manner that each of said high conductivity regions extends from said conductive gallium nitride layer to the upper surface of said semi-insulating gallium nitride layer; (e) forming first and second electrodes respectively on one of said high conductivity regions and on said semi-insulating layer at each diode chip region; and (f) cutting a light-emitting diode wafer, which has been manufactured in the above steps, to separate each diode chip from another.
Claim 8
Dependent Claim
39 words
A method of manufacturing a light-emitting diode chip as claimed in claim 5, wherein some of said insulating film strips are arranged in lattice fashion at positions corresponding to kerfs at which each diode chip is separated from another.
Claim 9
Dependent Claim
41 words
A method of manufacturing a light-emitting diode chip as claimed in claim 6, wherein each of said insulating film strips corresponding to said kerfs has a width greater than the width of a kerf which will be made between diode chips.
Claim 10
Dependent Claim
41 words
A method of manufacturing a light-emitting diode chip as claimed in claim 6, wherein each of said insulating film strips corresponding to said kerfs has a width equal to the width of a kerf which will be made between diode chips.
Claim 11
Dependent Claim
41 words
A method of manufacturing a light-emitting diode chip as claimed in claim 6, wherein each of said insulating film strips corresponding to said kerfs has a width narrower than the width of a kerf which will be made between diode chips.
Claim 12
Dependent Claim
42 words
A method of manufacturing a light-emitting diode chip as claimed in claim 6, wherein said insulating film strips corresponding to said kerfs comprise two parallel strips spaced by more than the width of a kerf which will be made between diode chips.
Claim 13
Dependent Claim
40 words
A method of manufacturing a light-emitting diode chip as claimed in claim 6, wherein said insulating film strips corresponding to said kerfs comprise two parallel strips spaced by the width of a kerf which will be made between diode chips.
Claim 14
Dependent Claim
42 words
A method of manufacturing a light-emitting diode chip as claimed in claim 6, wherein said insulating film strips corresponding to said kerfs comprise two parallel strips spaced by less than the width of a kerf which will be made between diode chips.
Claim 15
Dependent Claim
44 words
A method of manufacturing light-emitting diode chip as claimed in claim 6, wherein some of said insulating film strips for forming high conductivity regions each connected to said first electrode, is arranged parallel with one of said insulating film strips arranged in lattice fashion.
Claim 16
Dependent Claim
47 words
A method of manufacturing a light-emitting diode chip as claimed in claim 6, wherein some of said insulating film strips for forming high conductivity regions each connected to said first electrode, is arranged oblique with respect to one of said insulating film strips arranged in lattice fashion.
Claim 17
Dependent Claim
40 words
A method of manufacturing a light-emitting diode chip as claimed in claim 6, wherein one of said insulating film strips is placed at the middle of each diode chip to bisect the diode chip into two independent single crystal regions.
References Cited (Backward Citations)
US4316208A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-10-16 | 1988-04-16 | 1988-10-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-10-16 | 1992-04-16 | 1992-10-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-10-16 | 1996-04-16 | 1996-10-16 | $7700.00 | Window Closed / Lapsed |