US4472728A — Imaging X-ray spectrometer

Claim 1

Independent Claim 121 words

A detector array for providing imaging and energy resolution, comprising: a body (10) of semiconductor material having a plurality of embedded interconnected boundaries (16, 18) of metallization extending completely through the body thickness of said semiconductor material and forming a grid to define the walls of an array of discrete detector cells (14), each of said cells having a centralized electrode (20) of metallization formed in said semiconductor material extending completely through said body thickness to provide a deep diode type of array, and means (22, 26, 28) coupled to said boundaries and electrodes for applying bias potentials operative to laterally create depletion regions between said cell walls whereby collectable charge carriers are formed in response to electromagnetic energy impinging thereon.

Claim 2

Dependent Claim 121 words

A detector array for providing imaging and energy resolution, comprising: a body (10) of semiconductor material having a plurality of embedded interconnected boundaries (16, 18) of metallization extending completely through the body thickness of said semiconductor material and forming a grid to define the walls of an array of discrete detector cells (14), each of said cells having a centralized electrode (20) of metallization formed in said semiconductor material extending completely through said body thickness to provide a deep diode type of array, and means (22, 26, 28) coupled to said boundaries and electrodes for applying bias potentials operative to laterally create depletion regions between said cell walls whereby collectable charge carriers are formed in response to electromagnetic energy impinging thereon.

Claim 3

Dependent Claim 76 words

The detector array as defined by claim 1 wherein said means (22, 26, 28) for applying bias potential includes: means (22) for applying a forward bias to said cell walls and means (26, 28) for applying a reverse bias to said centralized electrode in each cell whereby free electrons are produced as a result of X-ray photo-electron interaction with the silicon body (10) and which are collectible in the same cell in which said interaction occurs.

Claim 4

Dependent Claim 18 words

The detector array as defined by claim 2 wherein said semiconductor material of said body (10) comprises silicon.

Claim 5

Dependent Claim 19 words

The detector array as defined by claim 3 wherein said metallization of said embedded boundaries (16, 18) comprises aluminum.

Claim 6

Dependent Claim 23 words

The detector array as defined by claim 4 wherein said embedded boundaries (16, 18) define a generally rectangular matrix of detector cells (14).

Claim 7

Dependent Claim 21 words

The detector array as defined by claim 3 wherein said centralized electrode (20) of each cell (14) comprises an aluminum electrode.

Claim 8

Dependent Claim 35 words

The detector array as defined by claim 3 wherein said embedded boundaries (16, 18) comprises thermally migrated aluminum cell walls and said centralized electrode (20) in each cell (14) comprises a thermally migrated aluminum electrode.

Claim 9

Dependent Claim 37 words

The detector array as defined by claim 3 wherein the body of silicon has a thickness of substantially 50 mils or greater for operating and being responsive to X-ray energy in the 0.5 to 30 Kev range.

Claim 10

Dependent Claim 107 words

A semiconductor detector array, comprising: a wafer (10) of a semiconducting material having a low intrinsic majority charge carrier concentration; a grid of metal diffused traversely by thermal migration between one pair of opposed surfaces of said semiconductor wafer (10); said grid having a plurality of intersecting walls (16, 18) extending between and terminating in said opposed surfaces, said walls defining a plurality of discrete cells (14) in said semiconducting material; and a plurality of electrodes (20) spaced apart from said grid of metal diffused traversely between and terminating in said opposed surfaces, each of said electrodes (20) being located in different cells of said cells (14).

Claim 11

Dependent Claim 107 words

A semiconductor detector array, comprising: a wafer (10) of a semiconducting material having a low intrinsic majority charge carrier concentration; a grid of metal diffused traversely by thermal migration between one pair of opposed surfaces of said semiconductor wafer (10); said grid having a plurality of intersecting walls (16, 18) extending between and terminating in said opposed surfaces, said walls defining a plurality of discrete cells (14) in said semiconducting material; and a plurality of electrodes (20) spaced apart from said grid of metal diffused traversely between and terminating in said opposed surfaces, each of said electrodes (20) being located in different cells of said cells (14).

Claim 12

Dependent Claim 50 words

A semiconductor array as defined in claim 9 further comprising means (22, 26, 28) for applying a forward bias to said grid walls (16, 18) and a reverse bias to said electrodes (20) for providing charge carrier depletion to extend between said opposed surfaces in each of said discrete cells.

Claim 13

Dependent Claim 178 words

A semiconductor detector array as comprising: a wafer (10) of a semiconducting material having a low intrinsic majority charge carrier concentration, wherein said wafer has a thickness of a predetermined dimension which insures photo-electron interaction in the bulk of the silicon for X-ray energy in the range between 0.5 and 30 Kev; a grid of metal diffused transversely by thermal migration between one pair of opposed surfaces of said semiconducting wafer (10); said grid having a plurality of intersecting walls (16, 18) extending between and terminating in said opposed surfaces, said walls defining a plurality of discrete cells (14) in said semiconducting material; a plurality of electrodes (20) spaced apart from said grid of metal diffused transversely between and terminating in said opposed surfaces, each of said electrodes (20) being located in different cells of said cells; and means (22, 26, 28) for applying a forward bias to said grid walls (16, 18) and a reverse bias to said electrodes (20) for providing charge carrier depletion to extend between said opposed surfaces in each of said discrete cells.

Claim 14

Dependent Claim 178 words

A semiconductor detector array as comprising: a wafer (10) of a semiconducting material having a low intrinsic majority charge carrier concentration, wherein said wafer has a thickness of a predetermined dimension which insures photo-electron interaction in the bulk of the silicon for X-ray energy in the range between 0.5 and 30 Kev; a grid of metal diffused transversely by thermal migration between one pair of opposed surfaces of said semiconducting wafer (10); said grid having a plurality of intersecting walls (16, 18) extending between and terminating in said opposed surfaces, said walls defining a plurality of discrete cells (14) in said semiconducting material; a plurality of electrodes (20) spaced apart from said grid of metal diffused transversely between and terminating in said opposed surfaces, each of said electrodes (20) being located in different cells of said cells; and means (22, 26, 28) for applying a forward bias to said grid walls (16, 18) and a reverse bias to said electrodes (20) for providing charge carrier depletion to extend between said opposed surfaces in each of said discrete cells.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1987-09-18	1988-03-19	1988-09-18	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1991-09-18	1992-03-19	1992-09-18	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	1995-09-18	1996-03-19	1996-09-18	$7700.00	Window Closed / Lapsed

Imaging X-ray spectrometer

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