Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
261 words
A process for the manufacture of shaped articles of polycrystalline silicon carbide having a density of at least 99% of the theoretical density of SiC, consisting essentially of: at least about 98.8% by weight of α-silicon carbide; from 0.1 to 0.4% by weight of aluminum; up to about 0.4% by weight of nitrogen and/or phosphorus; up to about 0.2% by weight of oxygen; and up to about 0.2% by weight of carbon, the α-silicon carbide being in the form of a homogeneous microstructure having grain sizes of not more than 12 μm and the other constituents being substantially in the form of a solid solution in the α-SiC lattice, and having a flexural strength of at least 600 N/mm 2 , up to at least 1450° C., measured according to the four-point method at a stress rate of at least 3 N.mm -2 .sec -1 , and a predominately transgranular fracture mechanism, said process comprising: (a) forming a homogeneous mixture of pulverulent silicon carbide substantially in the form of the α-modification and having a particle size distribution of 3 μm and finer with from 0.1 to 0.4% by weight of the mixture calculated as free aluminum based on the total weight of solid constituents of an aluminum-containing additive as a sintering aid, and (b) hot-pressing the mixture in a die at a temperature of from 1850° C. to 2300° C. and a die pressure of at least 100 bar in an atmosphere inert to silicon carbide or in a vacuum for a sufficient length of time to form the desired product.
Claim 2
Dependent Claim
261 words
A process for the manufacture of shaped articles of polycrystalline silicon carbide having a density of at least 99% of the theoretical density of SiC, consisting essentially of: at least about 98.8% by weight of α-silicon carbide; from 0.1 to 0.4% by weight of aluminum; up to about 0.4% by weight of nitrogen and/or phosphorus; up to about 0.2% by weight of oxygen; and up to about 0.2% by weight of carbon, the α-silicon carbide being in the form of a homogeneous microstructure having grain sizes of not more than 12 μm and the other constituents being substantially in the form of a solid solution in the α-SiC lattice, and having a flexural strength of at least 600 N/mm 2 , up to at least 1450° C., measured according to the four-point method at a stress rate of at least 3 N.mm -2 .sec -1 , and a predominately transgranular fracture mechanism, said process comprising: (a) forming a homogeneous mixture of pulverulent silicon carbide substantially in the form of the α-modification and having a particle size distribution of 3 μm and finer with from 0.1 to 0.4% by weight of the mixture calculated as free aluminum based on the total weight of solid constituents of an aluminum-containing additive as a sintering aid, and (b) hot-pressing the mixture in a die at a temperature of from 1850° C. to 2300° C. and a die pressure of at least 100 bar in an atmosphere inert to silicon carbide or in a vacuum for a sufficient length of time to form the desired product.
Claim 3
Dependent Claim
22 words
A process according to claim 1, wherein a silicon carbide powder that is exclusively in the form of the α-modification is used.
Claim 4
Dependent Claim
26 words
A process according to claim 2, wherein a silicon carbide powder having a specific surface area of from 4 to 14 m 2 /g is used.
Claim 5
Dependent Claim
28 words
A process according to claim 1, wherein the aluminum-containing additive is used in the form of a powder having a particle size distribution of 10 μm and finer.
Claim 6
Dependent Claim
25 words
A process according to claim 4, wherein the aluminum-containing additive is selected from the group consisting of aluminum metal, an aluminum compound, and mixtures thereof.
Claim 7
Dependent Claim
24 words
A process according to claim 5, wherein the aluminum compound is selected from the group consisting of aluminum nitride, aluminum phosphide and mixtures thereof.
Claim 8
Dependent Claim
25 words
A process according to claim 1, wherein the pressure-sintering is carried out in vacuo at a gas pressure of less than 50 mbar (5000 Pa).
Claim 9
Dependent Claim
17 words
A process according to claim 1, wherein the pressure-sintering is carried out in a protective gas atmosphere.
Claim 10
Dependent Claim
28 words
The process of claim 8, wherein the gas atmosphere consists essentially of a gas selected from the group consisting of argon, helium, CO, H 2 and mixtures thereof.
Claim 11
Dependent Claim
9 words
Shaped articles made by the process of claim 1.
Claim 12
Dependent Claim
21 words
Shaped articles according to claim 10 having an n-exponent of the subcritical crack propagation of at least 70 at 1450° C.
Claim 13
Dependent Claim
14 words
Shaped articles of claim 11 wherein the subcritical crack propagation is at least 90.
Claim 14
Dependent Claim
20 words
The shaped articles of claim 11 or 10 wherein the residual oxygen content is less than about 0.1% by weight.
Claim 15
Dependent Claim
20 words
The shaped articles of claim 5 or 10 wherein the residual carbon content is less than about 0.1% by weight.
Claim 16
Dependent Claim
24 words
The shaped articles of claim 11 or 10 wherein the residual oxygen content and carbon content are each less than about 0.1% by weight.