Abstract In a semiconductor laser device having at least a first semiconductor layer, second and third semiconductor layers which are formed in a manner to sandwich the first semiconductor layer and which have a wider band gap and a lower refractive index than those of the first semiconductor layer, an optical resonator and carrier injection means; a semiconductor laser device characterized in that at least said first semiconductor layer has an angle of inclination ( theta ) relative to an axis which is perpendicular to optically flat faces constituting said optical resonator. The inclination angle theta (rad) should most preferably lie in a range of: <IMAGE> where theta z denotes a reflection angle, theta c a critical angle, W 1/2 of a thickness of a waveguide, and l a cavity length. The laser device is effective for preventing laser facets from breaking down, and can produce high power.
Inventors
👤 Takao Kuroda
👤 Takashi Kajimura
👤 Yasutoshi Kashiwada
👤 Naoki Chinone
👤 Kunio Aiki
👤 Jun-Ichi Umeda
Bibliographic Details
Application Number—
JurisdictionUS
Data Sourcegoogle_patents
Last Synchronized2026-10-23 08:25
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
88 words
In a semiconductor laser device having at least a first semiconductor layer, second and third semiconductor layers which are formed in a manner to sandwich the first semiconductor layer and which have a wider band gap and a lower refractive index than those of the first semiconductor layer, an optical resonator and carrier injection means; a semiconductor laser device characterized in that at least said first semiconductor layer has an angle of inclination relative to an axis which is perpendicular to optically flat faces constituting said optical resonator.
Claim 2
Dependent Claim
88 words
In a semiconductor laser device having at least a first semiconductor layer, second and third semiconductor layers which are formed in a manner to sandwich the first semiconductor layer and which have a wider band gap and a lower refractive index than those of the first semiconductor layer, an optical resonator and carrier injection means; a semiconductor laser device characterized in that at least said first semiconductor layer has an angle of inclination relative to an axis which is perpendicular to optically flat faces constituting said optical resonator.
Claim 3
Dependent Claim
48 words
A semiconductor laser device according to claim 1, characterized in that the inclination angle θ (rad) is selected at least from within a range of: ##EQU11## where θ z denotes a reflection angle of laser radiation within an equivalent waveguiding passage, and θ c denotes a critical angle.
Claim 4
Dependent Claim
41 words
A semiconductor laser device according to claim 2, characterized in that said angle θ (rad) is selected from within a range of: ##EQU12## where W denotes 1/2 of a thickness of the light waveguiding passage, and l denotes a cavity length.