Hard and adherent layers from organic resin coatings

Claim 1

A method of making a hard and adherent coating, comprising the steps of: applying to a substrate a coating of a sulfur-free organic resin that shrinks in thickness when subjected to ion bombardment, the coating having an implantation surface and providing a coating-substrate interface, implanting ions into the implantation surface, at a first energy that provides complete penetration of the resin coating at the beginning of bombardment, for a duration long enough to at least partially carbonize the coating, and subsequently implanting ions into the implantation surface, at at least one lesser energy that lodges the ions at or near the coating-substrate interface, for a duration that enhances hardness and scratch resistance of the coating over that obtained by the first-mentioned ion implantation.

Claim 2

A method of making a hard and adherent coating, comprising the steps of: applying to a substrate a coating of a sulfur-free organic resin that shrinks in thickness when subjected to ion bombardment, the coating having an implantation surface and providing a coating-substrate interface, implanting ions into the implantation surface, at a first energy that provides complete penetration of the resin coating at the beginning of bombardment, for a duration long enough to at least partially carbonize the coating, and subsequently implanting ions into the implantation surface, at at least one lesser energy that lodges the ions at or near the coating-substrate interface, for a duration that enhances hardness and scratch resistance of the coating over that obtained by the first-mentioned ion implantation.

Claim 3

A method of making an adherent, hard and scratch-resistant coating comprising the steps of: applying a coating of a sulfur-free organic resin that shrinks in thickness when subjected to ion implantation to a surface of a chemically compatible substrate, first implanting ions into the coated surface, at an energy that allows the ions to penetrate through the entire coating thickness into the substrate, for a duration long enough to measurably reduce thickness of the resin coating, and then implanting ions into the coated surface, at at least one lesser energy that allows the ions to lodge at or near the substrate surface, effective to provide an adherent, hard and abrasion-resistant coating on the substrate surface.

Claim 4

A method of making an adherent, hard and scratch-resistant coating comprising the steps of: applying a coating of a sulfur-free organic resin that shrinks in thickness when subjected to ion implantation to a surface of a chemically compatible substrate, first implanting ions into the coated surface, at an energy that allows the ions to penetrate through the entire coating thickness into the substrate, for a duration long enough to measurably reduce thickness of the resin coating, and then implanting ions into the coated surface, at at least one lesser energy that allows the ions to lodge at or near the substrate surface, effective to provide an adherent, hard and abrasion-resistant coating on the substrate surface.

Claim 5

A method of making a scratch-resistant coating on a substrate surface comprising the steps of: applying onto a substrate a coating at least about 0.5 micrometer thick of a sulfur-free organic resin of the methacrylate type, which yields free carbon and significantly shrinks in thickness when subjected to ion implantation, the coating and substrate having an interface, at least partially decomposing the coating into a carbon film by an initial ion implantation at a first energy that is at least generally targeted to provide ion penetration below the interface, and thereafter bonding the film to the substrate, effective to increase its scratch resistance, by implanting ions into the film at a less than initially used energy that is targeted to lodge the ions at or near the interface.

Claim 6

A method of making a scratch-resistant coating on a substrate surface comprising the steps of: applying onto a substrate a coating at least about 0.5 micrometer thick of a sulfur-free organic resin of the methacrylate type, which yields free carbon and significantly shrinks in thickness when subjected to ion implantation, the coating and substrate having an interface, at least partially decomposing the coating into a carbon film by an initial ion implantation at a first energy that is at least generally targeted to provide ion penetration below the interface, and thereafter bonding the film to the substrate, effective to increase its scratch resistance, by implanting ions into the film at a less than initially used energy that is targeted to lodge the ions at or near the interface.

Claim 8

A method of making a photomask for use in replicating integrated circuit patterns in a photoresist coating, comprising the steps of: applying a coating of resist onto a substrate transparent to ultraviolet light, delineating an integrated circuit pattern of resist on the substrate, darkening the patterned resist by ion implantation at a high energy preselected to provide high optical density with respect to a preselected wavelength of radiation, and giving the patterned resist a second ion implantation at a lesser energy that is preselected to provide high scratch resistance for the resist without significantly reducing its optical density.

Claim 9

A method of making a photomask for use in replicating integrated circuit patterns in a photoresist coating, comprising the steps of: applying a coating of resist onto a substrate transparent to ultraviolet light, delineating an integrated circuit pattern of resist on the substrate, darkening the patterned resist by ion implantation at a high energy preselected to provide high optical density with respect to a preselected wavelength of radiation, and giving the patterned resist a second ion implantation at a lesser energy that is preselected to provide high scratch resistance for the resist without significantly reducing its optical density.

Claim 10

A method of making a photomask for use in replicating integrated circuit patterns in a photoresist coating, comprising the steps of: forming an integrated circuit pattern of an electron sensitive resist, at least about 0.5 micrometer thick, onto a substrate substantially transparent to deep ultraviolet light, darkening the patterned resist by ion implantation at an energy greater than about 180 keV at a rate greater than about 2 microamperes per square centimeter and at a dosage of about 10 15 -10 16 ions per square centimeter, and enhancing scratch resistance of the darkened patterned resist by a second ion implantation at an energy of about 100-150 keV at a rate of at least about 2 microamperes per square centimeter at a dosage of about 10 15 -10 16 ions per square centimeter.

Claim 11

A method of making a photomask for use in replicating integrated circuit patterns in a photoresist coating, comprising the steps of: forming an integrated circuit pattern of an electron sensitive resist, at least about 0.5 micrometer thick, onto a substrate substantially transparent to deep ultraviolet light, darkening the patterned resist by ion implantation at an energy greater than about 180 keV at a rate greater than about 2 microamperes per square centimeter and at a dosage of about 10 15 -10 16 ions per square centimeter, and enhancing scratch resistance of the darkened patterned resist by a second ion implantation at an energy of about 100-150 keV at a rate of at least about 2 microamperes per square centimeter at a dosage of about 10 15 -10 16 ions per square centimeter.

Claim 12

A method of making a photomask suitable for delineating patterns in photoresists sensitive to ultraviolet light as low as 220 nanometers comprising the steps of: applying a 0.5-1.0 micrometer thick coating of a polymethyl methacrylate resist onto a quartz substrate, delineating a transparent integrated circuit pattern of resist on the substrate, implanting the patterned resist with ions at an energy in excess of about 180 keV at a rate greater than about 2 microamperes per square centimeter in a dose of about 10 15 -10 16 ions per square centimeter to reduce the thickness of the photoresist to about 1/4 of its original thickness and substantially inhibit transmittance of ultraviolet light having a wavelength shorter than about 300 nanometers, and thereafter subjecting the patterned resist to a lower energy implantation of about 100-150 keV at a rate of more than about 2 microamperes per square centimeter and at a dosage of about 10 15 -10 16 ions per square centimeter to increase resist scratch resistance on the quartz plate.

Claim 13

A method of making a photomask suitable for delineating patterns in photoresists sensitive to ultraviolet light as low as 220 nanometers comprising the steps of: applying a 0.5-1.0 micrometer thick coating of a polymethyl methacrylate resist onto a quartz substrate, delineating a transparent integrated circuit pattern of resist on the substrate, implanting the patterned resist with ions at an energy in excess of about 180 keV at a rate greater than about 2 microamperes per square centimeter in a dose of about 10 15 -10 16 ions per square centimeter to reduce the thickness of the photoresist to about 1/4 of its original thickness and substantially inhibit transmittance of ultraviolet light having a wavelength shorter than about 300 nanometers, and thereafter subjecting the patterned resist to a lower energy implantation of about 100-150 keV at a rate of more than about 2 microamperes per square centimeter and at a dosage of about 10 15 -10 16 ions per square centimeter to increase resist scratch resistance on the quartz plate.

Claim 15

A method of making a photomask for use in replicating integrated circuit patterns in a resist coating, comprising the steps of: applying a film of resist onto a substrate transparent to ultraviolet light, so as to provide a film-substrate interface, delineating an integrated circuit pattern of the resist on the substrate, implanting ions into the patterned film at an energy preselected to carbonize the film substantially throughout its thickness, and thereafter implanting additional ions into the film at a lesser energy that is preselected to enhance film scratch resistance.

Claim 16

A method of making a photomask for use in replicating integrated circuit patterns in a resist coating, comprising the steps of: applying a film of resist onto a substrate transparent to ultraviolet light, so as to provide a film-substrate interface, delineating an integrated circuit pattern of the resist on the substrate, implanting ions into the patterned film at an energy preselected to carbonize the film substantially throughout its thickness, and thereafter implanting additional ions into the film at a lesser energy that is preselected to enhance film scratch resistance.

Claim 18

A method of making a photomask for use in replicating integrated circuit patterns in a resist coating, comprising the steps of: applying a film of resist onto a transparent substrate, so as to provide a film-substrate interface, delineating an integrated circuit pattern of the resist on the substrate, implanting the resist film with ions at an energy and in a dose preselected to more than merely carbonize the patterned resist film, wherein the total dosage is preselected to obtain an intended compromise between film hardness and film transparency and a significant proportion of the implanted ions are of an energy targeted for the film-substrate interface to obtain increased adhesion of the film to the substrate, effective to produce a patterned photomask of enhanced wear resistance.

Claim 19

A method of making a photomask for use in replicating integrated circuit patterns in a resist coating, comprising the steps of: applying a film of resist onto a transparent substrate, so as to provide a film-substrate interface, delineating an integrated circuit pattern of the resist on the substrate, implanting the resist film with ions at an energy and in a dose preselected to more than merely carbonize the patterned resist film, wherein the total dosage is preselected to obtain an intended compromise between film hardness and film transparency and a significant proportion of the implanted ions are of an energy targeted for the film-substrate interface to obtain increased adhesion of the film to the substrate, effective to produce a patterned photomask of enhanced wear resistance.

Claim 20

A method of making a photomask for use in replicating integrated circuit patterns in a resist coating, comprising the steps of: forming a film at least about 0.5 micron thick of a methacrylate-type resist on a substrate substantially transparent to deep ultraviolet light, said film and substrate having an interface, initially implanting the resist with ions at an energy and dosage sufficient to carbonize the film substantially throughout its thickness and increase its optical density with respect to deep ultraviolet light, and then enhancing scratch resistance of the initially implanted resist by additional implantation of ions at an energy targeted substantially for the resist-substrate interface, the additional implantation being at a dosage which when combined with the initial implantation dosage is less than that which will significantly reduce the film optical density.

Claim 21

A method of making a photomask for use in replicating integrated circuit patterns in a resist coating, comprising the steps of: forming a film at least about 0.5 micron thick of a methacrylate-type resist on a substrate substantially transparent to deep ultraviolet light, said film and substrate having an interface, initially implanting the resist with ions at an energy and dosage sufficient to carbonize the film substantially throughout its thickness and increase its optical density with respect to deep ultraviolet light, and then enhancing scratch resistance of the initially implanted resist by additional implantation of ions at an energy targeted substantially for the resist-substrate interface, the additional implantation being at a dosage which when combined with the initial implantation dosage is less than that which will significantly reduce the film optical density.