Process and apparatus for converged fine line electron beam treatment of objects

Claim 2

A process for treatment of objects with the aid of electron beam energy, that comprises, generating and propagating electrons within a vacuum along a predetermined direction and in a linear beam having spatial and temporal uniformity of both high current densities and low electron energy levels that extends transverse to said direction; converging the beam into a fine line of intense charge; and impacting the converged fine line beam upon an object-to-be-treated.

Claim 3

A process as claimed in claim 1 and in which the said object is disposed in said vacuum.

Claim 4

A process as claimed in claim 1 and in which the converged beam is exited outside the vacuum and there impacted upon said object.

Claim 5

A process as claimed in claim 1 and in which said linear beam extends along substantially a straight line.

Claim 6

A process as claimed in claim 1 and in which said linear beam extends along lines of changing direction including curvalinear lines.

Claim 7

A process as claimed in claim 1 and in which the beam is adjusted to be of transverse length of from about 2 to 15 cm. or longer and converged to a width of the order of between substantially 10 -3 and 1 cm., or wider and the beam profile is adjusted to produce beam current densities of the order of up to about 1000 A/cm 2 under beam voltages with limits from about 1 to 30 Kv.

Claim 8

A process as claimed in claim 1 and in which the impacting is adjusted to effect one or more of annealing, welding, etching, curing, cutting, polishing and surface alteration.

Claim 9

A process as claimed in claim 1 and in which the fine line beam is caused to scan the said object.

Claim 10

A process as claimed in claim 8 and in which the beam is modulated in intensity during the scan.

Claim 11

A process as claimed in claim 9 and in which the beam is pulsed.

Claim 12

A process as claimed in claim 8 and in which the further step is performed of masking predetermined portions of the object from the beam during the scan.

Claim 13

A process as claimed in claim 8 and in which the effective rate of scan is varied during traverse of the object.

Claim 14

A process as claimed in claim 8 and in which the progress of the electron beam treatment of the object is monitored at the object and the treatment of the same is controlled in accordance with said monitoring.

Claim 15

A process as claimed in claim 1 and in which the length of the strip is adjusted substantially to correspond to a dimension of the object under treatment.

Claim 16

A process as claimed in claim 6 and in which the treatment time of the fine line beam upon any point of the object is of the order of microseconds.

Claim 17

A process as claimed in claim 6 and in which the beam is stationary relative to the object.

Claim 18

A process as claimed in claim 16 and in which the object is moved past the fine line beam at velocities up to the order of about 1000 cm./sec.

Claim 19

A process as claimed in claim 1 and in which said converging is effected by at least one of electrostatic and ion focusing.

Claim 20

A process as claimed in claim 1 wherein said treatment is effected as a uniform deposit of the energy of said fine line beam within a region of the order of microns of the material surface of the object, at flux-fluence levels that raise the surface temperature to a high value without substantially heating the material of the object outside the energy deposition region.

Claim 21

A process as claimed in claim 19 and in which the electron beam has a voltage of the order of a few keV and less at power densities of flux ranging from a few 10's of KW/cm 2 to several 10's of MW/cm 2 .

Claim 22

A process as claimed in claim 19 and in which the electron beam energy is deposited in a time short enough to preclude significant thermal diffusion into the material of the object underlying its surface region and long enough to be useful for heating the volume of the object-to-be treated.

Claim 23

A process as claimed in claim 21 and in which energy densities of fluence are produced of the order of from a few to several hundred Joules/cm 2 .

Claim 24

A process as claimed in claim 14 and in which the object is of semiconductor material and the said treatment by the fine line electron beam effects one of annealing, formation of metal-silicide interconnectors, formation of doped SiO 2 layers, formation of homogeneous substrates, surface diffusion, zone refining, impurity gettering, and solid-or-liquid-phase regrowth of large single crystals by one of epitaxial, heteroepitaxial, and graphrepitaxial recrystallization.

Claim 25

Apparatus for generating a fine line strip electron beam for the treatment of materials for physical, chemical, mechanical and other surface modifications, having, in combination, electron gun means for propagating electrons along a predetermined direction and disposed within an evacuated housing and comprising a cathode for generating the electrons extending linearly transversely to said direction, control grid and acceleration and focusing means, and means for adjusting the latter to converge the linear beam into a fine line electron beam strip; and means for supporting material-to-be treated in the path of the converged strip; the cathode being of shape and length corresponding substantially to a dimensional area of the material so that the same is treated by the fine line beam simultaneously across such dimension, and being formed such that the electron beam has spatial and temporal uniformity of both high current densities and low electron energy levels.

Claim 26

Apparatus for generating a fine line strip electron beam for the treatment of materials for physical, chemical, mechanical and other surface modifications, having, in combination, electron gun means for propagating electrons along a predetermined direction and disposed within an evacuated housing and comprising a cathode for generating the electrons extending linearly transversely to said direction, control grid and acceleration and focusing means, and means for adjusting the latter to converge the linear beam into a fine line electron beam strip; and means for supporting material-to-be treated in the path of the converged strip; the cathode being of shape and length corresponding substantially to a dimensional area of the material so that the same is treated by the fine line beam simultaneously across such dimension, and being formed such that the electron beam has spatial and temporal uniformity of both high current densities and low electron energy levels.

Claim 27

Apparatus as claimed in claim 24 and in which the material supporting means is disposed within said housing.

Claim 28

Apparatus as claimed in claim 24 and in which the beam voltage and current are adjusted so that the converged thin line beam strip deposits uniform energy across the strip within a region of the order of microns of the material surface, and at flux-fluence levels that raise the surface temperature to a high value without substantially heating the material under said region.

Claim 29

Apparatus as claimed in claim 26 and in which said voltage is of the order of a few 10's of kV power densities of flux ranging from a few 10's of KW/cm 2 to several 10's of MW/cm 2 .

Claim 30

Apparatus as claimed in claim 24 and in which the fine line beam strip is adjusted to be of transverse length of from about 2 to 15 cm. or longer and is converged to a width of the order of between substantially 10 -3 cm. and a few centimeters.

Claim 31

Apparatus as claimed in claim 28 and in which the current densities of said beam strip are adjusted to be of the order of up to about 1000 A/cm 2 under beam voltages within limits from about 1 to 30 Kv.

Claim 32

Apparatus as claimed in claim 24 and in which the accelerating means is adjusted to provide energy densities of fluence in the strip of the order of from a few to several hundred Joules/cm 2 .

Claim 33

Apparatus as claimed in claim 24 and in which the material is a semiconductor and the said treatment by the fine line electron beam effects one of annealing, formation of metal-silicide interconnectors, formation of doped SiO 2 layers, formation of homogeneous substrates, surface diffusion, zone refining, impurity gettering, and solid-or-liquid-phase regrowth of large single crystals by one of epitaxial, heteroepitaxial, and graphrepitaxial recrystallization.

Claim 34

Apparatus as claimed in claim 24 and in which there is provided, interposed between the focusing and material supporting means, electron beam deflection means for enabling deflection of the fine line strip, as for stepped and other position-changing scanning.

Claim 35

Apparatus as claimed in claim 24 and in which means is provided for moving the material past the fine line strip.

Claim 36

Apparatus as claimed in claim 33 and in which deflecting means is provided for supplementing the scanning effected by material moving, by electron scanning of the strip.

Claim 37

Apparatus as claimed in claim 34 and in which means is provided for intensity-modulating the fine line strip beam, including pulsing the same.

Claim 38

Apparatus as claimed in claim 35 and in which means is provided for depositing the energy of the fine line strip beam upon said material in a time short enough to preclude significant thermal diffusion into the material beyond the intended surface region thereof and/or for times long enough to heat the volume of the object-to-be treated.

Claim 39

Apparatus as claimed in claim 24, wherein said adjusting means includes ion focusing of the electron beam by gas ions in the housing.