US4376688A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing semiconductor films
Assignee: Xerox Corp
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Filing: 1981-04-03
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Granted: 1983-03-15
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Expires: 2001-04-03
Abstract
Abstract A method for producing semiconducting films on a substrate wherein a plasma of a reactive gas is generated and an ion beam from the plasma is directed and accelerated toward a target of material of which the film is to be formed. The target which is maintained in a vacuum chamber at reduced pressure, is sputtered with the reactive ion beam and the material sputtered off the target is collected as a film on a substrate which is physically isolated from the plasma generating process and the sputtering process. Preferably the reactive gas is present in a mixture with an inert gas heavier than the reactive gas.
Inventors
- 👤 Gerald P. Ceasar
- 👤 Scott F. Grimshaw
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 01:31
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/46; H; H10; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/36; H10P14/3602
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
88 words
A method for producing semiconducting films on a substrate comprising generating a plasma of reactive gas, extracting, accelerating and directing an ion beam from said plasma toward a target of material of which the film is to be formed, said target being maintained in a vacuum chamber at reduced pressure, sputtering said target with said reactive ion beam to sputter the target material, collecting said sputtered target material as a film on said substrate, said substrate being physically isolated from the plasma generating process and the sputtering process.
Claim 2
Independent Claim
88 words
A method for producing semiconducting films on a substrate comprising generating a plasma of reactive gas, extracting, accelerating and directing an ion beam from said plasma toward a target of material of which the film is to be formed, said target being maintained in a vacuum chamber at reduced pressure, sputtering said target with said reactive ion beam to sputter the target material, collecting said sputtered target material as a film on said substrate, said substrate being physically isolated from the plasma generating process and the sputtering process.
Claim 3
Dependent Claim
27 words
The method of claim 1 wherein said reactive gas is present in a mixture of said reactive gas with an inert gas heavier than said reactive gas.
Claim 4
Dependent Claim
11 words
The method of claim 1 wherein said reactive gas is hydrogen.
Claim 5
Dependent Claim
26 words
The method of claim 1 wherein said semiconducting film and said target material comprise the same element or elements from Group IVa of the Periodic Table.
Claim 6
Dependent Claim
21 words
The method of claim 4 wherein said semiconducting film is amorphous silicon and said target material comprises substantially pure crystalline silicon.
Claim 7
Dependent Claim
28 words
The method of claim 5 wherein said reactive gas is hydrogen and said amorphous film of silicon has silicon atoms coordinated with hydrogen substantially completely as the monohydride.
Claim 8
Dependent Claim
11 words
The method of claim 1 wherein said ion beam is collimated.
Claim 9
Dependent Claim
15 words
The method of claim 1 wherein said target is an amorphous polycrystalline or crystalline material.
Claim 10
Dependent Claim
12 words
The method of claim 1 wherein the substrate is at ambient temperature.
Claim 11
Dependent Claim
21 words
The method of claim 1 wherein the substrate is maintained at temperature of from about 25° C. to about 300° C.
Claim 12
Dependent Claim
11 words
The method of claim 2 wherein said inert gas is argon.
Claim 13
Dependent Claim
35 words
The method of claim 3 wherein said reactive hydrogen is present in said plasma in an amount of up to about 90 percent by volume the remainder being an inert gas heavier than the hydrogen.
Claim 14
Dependent Claim
10 words
The method of claim 1 wherein said substrate is flexible.
Claim 15
Dependent Claim
31 words
The method of claim 2 wherein said reactive gas is present in an amount sufficient to passivate some of the dangling bonds formed in the sputtered material collected on said substrate.
Claim 16
Dependent Claim
27 words
The method of claim 4 wherein said amorphous silicon is deposited at a rate of from about 0.6 microns per hour to about 3.0 microns per hour.
Claim 17
Dependent Claim
25 words
The method of claim 4 wherein the pressure in the vacuum chamber during sputtering is from about 5×10 -9 Torr to about 10 -3 Torr.
References Cited (Backward Citations)
US3494852A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-03-14 | 1986-09-13 | 1987-03-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-03-14 | 1990-09-13 | 1991-03-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-03-14 | 1994-09-13 | 1995-03-15 | $7700.00 | Window Closed / Lapsed |