Thin-film deposition

Claim 2

A film deposition method comprising the steps of: heating and vaporizing a material within a crucible of the sealed type having one or more ejection nozzles; ejecting the resulting vapor of the material via the ejection nozzles to a vacuum region such that atom aggregates or clusters tied by van der Waals force are formed through an adiabatic expansion to attain a supercooled state, the vacuum region adapted to accommodate a substrate therein; maintaining a vapor pressure in the vacuum region such that vapor particles of the material advance toward the substrate without collision with residual gas particles or the like within the vacuum region; depositing said clusters of atomic particles on said substrate, wherein said clusters are broken up upon striking the substrate which contributes to growth of the deposition due to migration of the material particles; and controlling the ejection velocity by varying the heating temperature of said crucible and varying the pressure differential between the pressure in said crucible and the pressure in said vacuum region for the purpose of controlling fine structures of films deposited onto the substrate wherein kinetic energy obtained during the ejection step, which has an important effect upon the fine structures of the deposited films, is controllable within a wide range.

Claim 3

A film deposition method comprising the steps of: heating and vaporizing a material within a crucible of the sealed type having at least one ejection nozzle; ejecting the resulting vapor of the material through an adiabatic expansion to attain a supercooled state via the ejection nozzle into a vacuum region where a substrate is disposed to thereby strike against the substrate; forming clusters of atomic particles from the adiabatically expanded vapor in the supercooled state being tied by van der Waals force as they are ejected into the vacuum region; maintaining the vacuum region at a vapor pressure less than 1/100 times lower than the vapor pressure of the crucible, the vapor pressure in the vacuum region being approximately 10 -2 Torr or less; depositing said clusters of atomic particles on said substrate, wherein said clusters are broken up upon striking the substrate which contributes to growth of the deposition due to migration of the material particles; and controlling the ejection velocity for controlling fine structures of the deposited films of the material onto the substrate.

Claim 4

A film deposition method comprising the steps of: heating and vaporizing a material within a crucible of the sealed type having at least one ejection nozzle; ejecting the resulting vapor of the material through an adiabatic expansion to attain a supercooled state via the ejection nozzle into a vacuum region where a substrate is disposed to thereby strike against the substrate; forming clusters of atomic particles from the adiabatically expanded vapor in the supercooled state being tied by van der Waals force as they are ejected into the vacuum region; maintaining the vacuum region at a vapor pressure less than 1/100 times lower than the vapor pressure of the crucible, the vapor pressure in the vacuum region being approximately 10 -2 Torr or less; depositing said clusters of atomic particles on said substrate, wherein said clusters are broken up upon striking the substrate which contributes to growth of the deposition due to migration of the material particles; and controlling the ejection velocity for controlling fine structures of the deposited films of the material onto the substrate.

Claim 5

A film deposition method as set forth in claim 2 wherein the controlling of the ejection velocity is accomplished by controlling the heating temperature of the crucible.

Claim 6

A film deposition method as set forth in claim 2 and further including the step of maintaining a vapor pressure within the crucible in a range of approximately 10 -1 to several Torr.

Claim 7

A film deposition method as set forth in claim 2 further comprising the steps of: ionizing the clusters as they approach the substrate; and accelerating the ionized clusters by a supply of acceleration voltage.

Claim 8

A film deposition method comprising the steps of: heating and vaporizing a material within a crucible of the sealed type having at least one ejection nozzle; ejecting the resulting vapor of the material through an adiabatic expansion to attain a supercooled state via the ejection nozzle into a vacuum region where a substrate is disposed to thereby strike against the substrate; forming clusters of atomic particles from the adiabatically expanded vapor in the supercooled state being tied by van der Waals force as they are ejected into the vacuum region; maintaining the vacuum region at approximately a vapor pressure less than 1/100 times lower than the vapor pressure of the crucible, the vapor pressure in the vacuum region being approximately 10 -2 Torr or less; maintaining a vapor pressure within the crucible in a range of approximately 10 -1 to several Torr; depositing said clusters of atomic particles on said substrate, wherein said clusters are broken up upon striking the substrate which contributes to growth of the deposition due to migration of the material particles; and controlling the ejection velocity by varying the heating temperature of said crucible and varying the pressure differential between the pressure in said crucible and the pressure in said vacuum region for controlling fine structures of the deposited films of the material onto the substrate.

Claim 9

A film deposition method comprising the steps of: heating and vaporizing a material within a crucible of the sealed type having at least one ejection nozzle; ejecting the resulting vapor of the material through an adiabatic expansion to attain a supercooled state via the ejection nozzle into a vacuum region where a substrate is disposed to thereby strike against the substrate; forming clusters of atomic particles from the adiabatically expanded vapor in the supercooled state being tied by van der Waals force as they are ejected into the vacuum region; maintaining the vacuum region at approximately a vapor pressure less than 1/100 times lower than the vapor pressure of the crucible, the vapor pressure in the vacuum region being approximately 10 -2 Torr or less; maintaining a vapor pressure within the crucible in a range of approximately 10 -1 to several Torr; depositing said clusters of atomic particles on said substrate, wherein said clusters are broken up upon striking the substrate which contributes to growth of the deposition due to migration of the material particles; and controlling the ejection velocity by varying the heating temperature of said crucible and varying the pressure differential between the pressure in said crucible and the pressure in said vacuum region for controlling fine structures of the deposited films of the material onto the substrate.