US4360246A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated waveguide and FET detector
Assignee: The AT&T MVPD Group LLC
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Filing: 1980-05-23
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Granted: 1982-11-23
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Expires: 2000-05-23
Abstract
Abstract A GaAs FET structure with a high electric field region, or active region, contacted by source, gate and drain electrodes is provided which can be used for high speed optical detection or for microwave oscillator optical injection locking. The device provides for efficient coupling of incident optical radiation into the active region, employing confinement and waveguiding regions lying in the plane of the device and adapted to guide incident optical radiation to the active region. GaAs photoconductors are also provided by eliminating the gate electrode.
Inventors
- 👤 Luis Figueroa
- 👤 Charles W. Slayman
- 👤 Huan-Wun Yen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 15:33
CPC Classifications
G; G02; G02B; G02B6/00; G02B6/24; G02B6/42
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
101 words
A monolithic integrated optical photodetector comprising: (a) a substrate of semi-insulating III-V semiconductor material; (b) a confinement region of mixed III-V semiconductor material on at least a portion of said substrate; (c) a waveguiding region of mixed III-V semiconductor material supported on said confinement region and adapted to receive and guide incident optical radiation; and (d) at least one detector supported on at least a portion of said waveguiding region and adapted to receive guided optical radiation, said detector including an active region of III-V semiconductor material supported on said waveguiding region and a pair of electrodes contacting said active region.
Claim 2
Dependent Claim
101 words
A monolithic integrated optical photodetector comprising: (a) a substrate of semi-insulating III-V semiconductor material; (b) a confinement region of mixed III-V semiconductor material on at least a portion of said substrate; (c) a waveguiding region of mixed III-V semiconductor material supported on said confinement region and adapted to receive and guide incident optical radiation; and (d) at least one detector supported on at least a portion of said waveguiding region and adapted to receive guided optical radiation, said detector including an active region of III-V semiconductor material supported on said waveguiding region and a pair of electrodes contacting said active region.
Claim 3
Dependent Claim
117 words
The device of claim 1 comprising: (a) a substrate of semi-insulating GaAs; (b) a confinement region of undoped Al x Ga 1-x As supported on at least a portion of said substrate, where x is at least about 0.42; (c) a transverse waveguiding region of undoped Al y Ga 1-y As supported on said confinement region, where y is at least about 0.37 and is about 5 to 10% less than x; (d) means for confining incident optical radiation in the lateral direction; and (e) at least one detector supported on at least a portion of said waveguiding region, including (i) an active region of n-type GaAs, and (ii) a pair of electrodes contacting said active region.
Claim 4
Dependent Claim
29 words
The device of claim 1 or 2 further comprising a gate electrode contacting a portion of said active region, said gate electrode spaced apart from said pair of electrodes.
Claim 5
Dependent Claim
22 words
The device of claim 2 in which x ranges from about 0.42 to 0.70 and y ranges from about 0.37 to 0.65.
Claim 6
Dependent Claim
22 words
The device of claim 4 in which x ranges from about 0.42 to 0.55 and y ranges from about 0.37 to 0.50.
Claim 7
Dependent Claim
18 words
The device of claim 5 in which x is about 0.5 and y is about 0.40 to 0.43.
Claim 8
Dependent Claim
20 words
The device of claim 2 in which the thickness of said confinement region ranges from about 0.5 to 1 μm.
Claim 9
Dependent Claim
21 words
The device of claim 2 in which the thickness of said transverse waveguiding region ranges from about 1 to 5 μm.
Claim 10
Dependent Claim
21 words
The device of claim 8 in which the thickness of said transverse waveguiding region ranges from about 2 to 5 μm.
Claim 11
Dependent Claim
20 words
The device of claim 2 in which the thickness of said active region ranges from about 0.1 to 1 μm.
Claim 12
Dependent Claim
20 words
The device of claim 10 in which the thickness of said active region ranges from about 0.1 to 0.5 μm.
Claim 13
Dependent Claim
19 words
The device of claim 2 wherein said lateral confining means comprises a strip supported on said transverse waveguiding region.
Claim 14
Dependent Claim
109 words
A process for fabricating a monolithic integrated optical photodetector on a substrate of semi-insulating III-V semiconductor material comprising: (a) forming a confinement region of mixed III-V semiconductor material on at least a portion of said substrate; (b) forming a transverse waveguiding region of mixed III-V semiconductor material on said confinement region; (c) forming a lateral waveguiding region in said transverse waveguiding region; and (d) forming at least one detector associated with said waveguiding region by a process including (i) forming an active region of III-IV semiconductor material on at least a portion of said optical waveguide, and (ii) forming a pair of electrodes in contact with said active region.
Claim 15
Dependent Claim
109 words
A process for fabricating a monolithic integrated optical photodetector on a substrate of semi-insulating III-V semiconductor material comprising: (a) forming a confinement region of mixed III-V semiconductor material on at least a portion of said substrate; (b) forming a transverse waveguiding region of mixed III-V semiconductor material on said confinement region; (c) forming a lateral waveguiding region in said transverse waveguiding region; and (d) forming at least one detector associated with said waveguiding region by a process including (i) forming an active region of III-IV semiconductor material on at least a portion of said optical waveguide, and (ii) forming a pair of electrodes in contact with said active region.
Claim 16
Dependent Claim
121 words
The process of claim 13 comprising: (a) forming on a substrate of semi-insulating GaAs a confinement region of undoped Al x Ga 1-x As, where x is at least about 0.42; (b) forming on said confinement region a transverse waveguiding region of undoped, Al y Ga 1-y As, where y is at least about 0.37 and is about 5 to 10% less than x; (c) forming a lateral waveguiding region in said transverse waveguiding region; and (d) forming at least one detector associated with said waveguiding region by a process including (i) forming an active region of n-type GaAs on at least a portion of said optical waveguide, and (ii) forming a pair of electrodes in contact with said active region.
Claim 17
Dependent Claim
31 words
The process of claim 13 or 14 in which a gate electrode is formed on a portion of said active region, said gate electrode spaced apart from said pair of electrodes.
Claim 18
Dependent Claim
22 words
The process of claim 14 in which x ranges from about 0.42 to 0.70 and y ranges from about 0.37 to 0.65.
Claim 19
Dependent Claim
22 words
The process of claim 16 in which x ranges from about 0.42 to 0.55 and y ranges from about 0.37 to 0.50.
Claim 20
Dependent Claim
18 words
The process of claim 17 in which x is about 0.5 and y is about 0.40 to 0.43.
Claim 21
Dependent Claim
20 words
The process of claim 14 in which the thickness of said confinement region ranges from about 0.5 to 1 μm.
Claim 22
Dependent Claim
21 words
The process of claim 14 in which the thickness of said transverse waveguiding region ranges from about 1 to 5 μm.
Claim 23
Dependent Claim
20 words
The process of claim 20 in which the thickness of said waveguiding region ranges from about 2 to 5 μm.
Claim 24
Dependent Claim
20 words
The process of claim 14 in which the thickness of said active region ranges from about 0.1 to 1 μm.
Claim 25
Dependent Claim
20 words
The process of claim 22 in which the thickness of said active region ranges from about 0.1 to 0.5 μm.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-11-22 | 1986-05-24 | 1986-11-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-11-22 | 1990-05-24 | 1990-11-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-11-22 | 1994-05-24 | 1994-11-23 | $7700.00 | Window Closed / Lapsed |