Method of delineating a desired integrated circuit pattern upon a circuit substrate

Claim 2

Method of delineating a desired integrated circuit pattern upon a circuit substrate, said method including the steps of: (A) forming the copolymer poly(methyl alpha-chloroacrylate-co-methyacrylonitrile) by emulsion polymerization techniques and in the mole ratio of about 1 mole methyl alpha-chloroacrylate to about 1 mole methacrylonitrile, (B) dissolving the copolymer in a spinning solvent that will dissolve the copolymer and form a viscous solution, (C) applying the solution to the surface of the substrate and spinning the substrate to form a smooth, uniform resist film of about 0.3 to 1.0 micron in thickness, (D) heating the resist film, (E) exposing the region of the resist film to be patterned to ionizing radiation until exposures greater than 1.5×10 -5 (10 keV) C/cm 2 are obtained, and (F) developing the exposed regions of the resist to the substrate in a 4 to 1 mixture of benzonitrile and toluene.

Claim 3

Method according to claim 1 wherein the copolymer is formed by premixing about 5×10 -2 gram of potassium persulfate, about 0.4 gram of sodium lauryl sulfate and 100 grams of distilled water, adding a mixture of about 23 grams of methyl alpha-chloroacrylate and about 27 grams of methacrylonitrile thereto, heating the reaction at 50 degrees with vigorous magnetic stirring for about 14 hours under a slow continuous nitrogen purge, and coagulating the resulting copolymer latex by pouring into rapidly stirring methanol.

Claim 4

Method according to claim 1 wherein the substrate is a silicon wafer having an oxide surface layer of about 0.3 micron in thickness.

Claim 5

Method according to claim 1 wherein the spinning solvent is nitromethane.

Claim 6

Method according to claim 1 wherein a smooth, uniform resist film of about 0.28 to 1.0 micron in thickness is formed on the substrate.

Claim 7

Method according to claim 1 wherein the ionizing radiation is selected from the group consisting of electron beam and x-ray.

Claim 8

Method according to claim 6 wherein the ionizing radiation is electron beam.

Claim 9

Method according to claim 6 wherein the ionizing radiation is x-ray.

Claim 10

Method of delineating a desired integrated circuit pattern upon a circuit substrate, said method consisting of: premixing about 5×10 -2 gram of potassium persulfate, about 0.4 gram of sodium lauryl sulfate and about 100 grams of distilled water, adding a mixture of about 23 grams of methyl alpha-chloroacrylate and about 27 grams of methacrylonitrile thereto, heating the reaction at 50 degrees with vigorous magnetic stirring for about 14 hours under a slow continuous nitrogen purge, coagulating the resulting copolymer latex from methanol, dissolving the powder in nitromethane to form a viscous solution and applying the solution to an oxidized silicon substrate in which the thickness of the oxide layer is about 0.3 micron, spinning the substrate to form a smooth, uniform resist film of about 0.3 to 1.0 micron in thickness, heating the resist film in-vacuo at about 130-160 degrees C. for about 30 minutes, exposing the resist film on the substrate to be patterned to an electron beam test pattern generated by a flying spot scan-controlled electron beam machine operating at 10 keV until exposures greater than 1.5×10 -5 C/cm 2 are obtained, and selectively removing the exposed resist regions of the film to the substrate by an 27 second spray development in a 4:1 mixture of benzonitrile and toluene.

Claim 11

Method of delineating a desired integrated circuit pattern upon a circuit substrate, said method consisting of: premixing about 5×10 -2 gram of potassium persulfate, about 0.4 gram of sodium lauryl sulfate and about 100 grams of distilled water, adding a mixture of about 23 grams of methyl alpha-chloroacrylate and about 27 grams of methacrylonitrile thereto, heating the reaction at 50 degrees with vigorous magnetic stirring for about 14 hours under a slow continuous nitrogen purge, coagulating the resulting copolymer latex from methanol, dissolving the powder in nitromethane to form a viscous solution and applying the solution to an oxidized silicon substrate in which the thickness of the oxide layer is about 0.3 micron, spinning the substrate to form a smooth, uniform resist film of about 0.3 to 1.0 micron in thickness, heating the resist film in-vacuo at about 130-160 degrees C. for about 30 minutes, exposing the resist film on the substrate to be patterned to an electron beam test pattern generated by a flying spot scan-controlled electron beam machine operating at 10 keV until exposures greater than 1.5×10 -5 C/cm 2 are obtained, and selectively removing the exposed resist regions of the film to the substrate by an 27 second spray development in a 4:1 mixture of benzonitrile and toluene.