US4300965A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for cementing semiconductor discs to carrier plates and product so obtained
Assignee: Siltronic AG
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Filing: 1977-02-07
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Granted: 1981-11-17
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Expires: 1997-02-07
Abstract
Abstract Process for cementing semiconductor discs to a carrier plate for subsequentolishing, which comprises applying to the discs a cementing solution being composed of (a) a resin of a melting range between 50° and 180° C. and a melt viscosity between 1000 and 6000 P; (b) a substance acting as plasticizer for the resin at cementing temperatures; and (c) a solvent for the resin and the plasticizer, which evaporizes at cementing temperatures, while avoiding during the application the occlusion of air bubbles between discs and cementing layer, and exerting pressure onto the plates at a temperature between cementing temperatures and 30° C. below the same. The invention also comprises the carrier plate carrying one or more discs cemented thereto by the above process.
Inventors
- 👤 Dietrich Schmidt
- 👤 Bruno Meissner
- 👤 Heinz-Jorg Rath
- 👤 Dieter Regler
- 👤 Jurgen Voss
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:07
CPC Classifications
H; H10; H10P; H10P50/00; Y; Y10; Y10S; Y10S156/00; Y10S156/918; Y10S156/93; Y10T; Y10T156/00; Y10T156/10; Y10T156/1089; Y10T156/1092; Y10T156/11
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
349 words
A process for cementing a semiconductor disc to a carrier plate, which comprises the steps of: first, applying to the carrier plate a layer of a cement solution consisting of (a) from 60 to 95 parts by weight of a maleate resin having a melting range (determined according to Kofler) within the temperature range of from 50° to 180° C., the upper limit of the melting range being not more than 20° C. above the cementing temperature to be used, and having a melt viscosity (as determined at 20° C. above the upper limit of the melting range of the resin) within the range of from 1000 to 6000 P, and, complementally, (b) from 5 to 40 parts by weight of an additional substance selected from the group consisting of benzil or alpha-naphthol that is substantially miscible with the resin, and has a plasticizing effect on the resin at the chosen cementing temperature and that has a melting point within the range of from 0°-25° C. below the cementing temperature to be used, and (c) from 75 to 250 parts by weight, based on the total weight of components (a) and (b) of a solvent for the resin and the plasticizer, the solvent having a boiling point that is lower than the cementing temperature to be used and such that the solvent evaporates at the cementing temperature; secondly, heating the carrier plate and layer of cement solution to the cementing temperature which is a temperature within the range of from 50° to 160° C., until the solvent has substantially evaporated from the cement solution; thirdly, placing the semiconductor disc onto the cement layer, at the said cementing temperature in such a manner that occlusion of air bubbles between said disc and cementing layer is avoided; fourthly, applying pressure to the semiconductor disc to secure it to the cement layer, while the carrier plate and the cement layer are at a temperature within the range of from 30° C. below the cementing temperature to the cementing temperature; and fifthly, cooling the cement layer in order to allow it to set.
Claim 2
Dependent Claim
349 words
A process for cementing a semiconductor disc to a carrier plate, which comprises the steps of: first, applying to the carrier plate a layer of a cement solution consisting of (a) from 60 to 95 parts by weight of a maleate resin having a melting range (determined according to Kofler) within the temperature range of from 50° to 180° C., the upper limit of the melting range being not more than 20° C. above the cementing temperature to be used, and having a melt viscosity (as determined at 20° C. above the upper limit of the melting range of the resin) within the range of from 1000 to 6000 P, and, complementally, (b) from 5 to 40 parts by weight of an additional substance selected from the group consisting of benzil or alpha-naphthol that is substantially miscible with the resin, and has a plasticizing effect on the resin at the chosen cementing temperature and that has a melting point within the range of from 0°-25° C. below the cementing temperature to be used, and (c) from 75 to 250 parts by weight, based on the total weight of components (a) and (b) of a solvent for the resin and the plasticizer, the solvent having a boiling point that is lower than the cementing temperature to be used and such that the solvent evaporates at the cementing temperature; secondly, heating the carrier plate and layer of cement solution to the cementing temperature which is a temperature within the range of from 50° to 160° C., until the solvent has substantially evaporated from the cement solution; thirdly, placing the semiconductor disc onto the cement layer, at the said cementing temperature in such a manner that occlusion of air bubbles between said disc and cementing layer is avoided; fourthly, applying pressure to the semiconductor disc to secure it to the cement layer, while the carrier plate and the cement layer are at a temperature within the range of from 30° C. below the cementing temperature to the cementing temperature; and fifthly, cooling the cement layer in order to allow it to set.
Claim 3
Dependent Claim
28 words
A process as claimed in claim 1, wherein component (a) of the cement solution has a melting range within the temperature range of from 70° to 130° C.
Claim 4
Dependent Claim
23 words
A process as claimed in claim 1 wherein component (c) of the cement solution has a melting point of at least 20° C.
Claim 5
Dependent Claim
23 words
A process as claimed in claim 1 wherein the cementing temperature is a temperature within the range of from 90° to 110° C.
Claim 6
Dependent Claim
25 words
A process as claimed in claim 1 wherein, after evaporation of the solvent, the cement layer has a thickness of from 15 to 30 μm.
Claim 7
Dependent Claim
63 words
A process as claimed in claim 1 wherein, subsequent to the fourth step of applying pressure to the semiconductor disc and prior to the fifth step of cooling the cement layer, the carrier plate, cement layer and semiconductor disc are heated to a temperature within the range of from the cementing temperature to 30° C. above the cementing temperature for removing mechanical distortions.
Claim 8
Dependent Claim
47 words
The process as claimed in claim 1, wherein the semiconductor disc is placed onto the cement layer by means of a suctional manipulator having a convex face in such a manner that it assumes a convex shape, the center of the disc contacting the cement layer first.
Claim 9
Dependent Claim
40 words
The process according to claim 1, additionally including the steps of polishing said semiconductor disc after said cement layer has set and thereafter removing said semiconductor disc from said carrier plate by prying it free by means of a tool.
References Cited (Backward Citations)
US1950468A
Cited
US2394689A
Cited
US3335087A
Cited
US3452133A
Cited
US3475867A
Cited
US3586559A
Cited
US4014091A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-11-16 | 1985-05-18 | 1985-11-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-11-16 | 1989-05-18 | 1989-11-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-11-16 | 1993-05-18 | 1993-11-17 | $7700.00 | Window Closed / Lapsed |