US4295115A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor absolute pressure transducer assembly and method
Assignee: Hitachi Ltd
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Filing: 1979-04-04
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Granted: 1981-10-13
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Expires: 1999-04-04
Abstract
Abstract A semiconductor absolute pressure transducer assembly has a silicon diaphragm assembly and a covering member. The silicon diaphragm assembly has a circular pressure sensitive diaphragm, on the surface of which are diffused piezoresistors and conducting paths. The covering member composed of borosilicate glass has a circular well formed therein. On the surface of the silicon diaphragm assembly on which the piezoresistors and the conducting paths are diffused, a passivating layer of silicon dioxide is deposited. Further on the passivating layer, a conductive layer is formed by, for example, evaporating silicon. And the glass covering member is bonded on the silicon diaphragm assembly by anodic bonding. Namely, the silicon diaphragm assembly and the glass covering member are heated up to a certain high temperature and a relative high voltage applied across the conductive layer of the silicon diaphragm assembly and the glass covering members.
Inventors
- 👤 Minoru Takahashi
- 👤 Takahiko Tanigami
- 👤 Kaoru Uchiyama
- 👤 Hitoshi Minorikawa
- 👤 Motohisa Nishihara
- 👤 Kanji Kawakami
- 👤 Seiko Suzuki
- 👤 Hiroaki Hachino
- 👤 Yutaka Misawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 11:35
CPC Classifications
G; G01; G01L; G01L19/00; G01L19/0061; G01L19/0069; G01L19/14; G01L19/145; G01L19/146; G01L19/147; H; H10; H10D; H10D48/00; H10D48/50; H10W; H10W72/00; H10W72/01; H10W72/015; H10W72/01515; H10W72/071; H10W72/075; H10W72/50; H10W72/531; H10W72/536; H10W72/5363; H10W72/541; H10W72/5449; H10W72/551; H10W72/552; H10W72/5522; H10W72/851; H10W72/874; H10W72/884; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082; Y10T29/49103
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
131 words
A semiconductor pressure transducer assembly comprising: a silicon diaphragm assembly, on which a pressure sensitive diaphragm is formed; piezoresistive elements diffused on the pressure sensitive diaphragm of said silicon diaphragm assembly, the resistance value of the piezoresistive elements varying depending on the strain appearing in the diaphragm; conducting paths diffused on said silicon diaphragm assembly for electrical connection of said piezoresistive elements; passivating layer covering the surface of said silicon diaphragm assembly, on which surface said piezoresistive elements and said conducting paths are diffused; and a covering member of insulating material mounted on the surface of said silicon diaphragm assembly, characterized in that a layer of conductor is disposed between said passivating layer and said covering member, and said conductor layer and said covering member are bonded by Anodic Bonding method.
Claim 2
Dependent Claim
131 words
A semiconductor pressure transducer assembly comprising: a silicon diaphragm assembly, on which a pressure sensitive diaphragm is formed; piezoresistive elements diffused on the pressure sensitive diaphragm of said silicon diaphragm assembly, the resistance value of the piezoresistive elements varying depending on the strain appearing in the diaphragm; conducting paths diffused on said silicon diaphragm assembly for electrical connection of said piezoresistive elements; passivating layer covering the surface of said silicon diaphragm assembly, on which surface said piezoresistive elements and said conducting paths are diffused; and a covering member of insulating material mounted on the surface of said silicon diaphragm assembly, characterized in that a layer of conductor is disposed between said passivating layer and said covering member, and said conductor layer and said covering member are bonded by Anodic Bonding method.
Claim 3
Dependent Claim
31 words
A semiconductor pressure transducer assembly as claimed in claim 1 wherein said covering member is composed of material having a thermal expansion coefficient being substantially equal to that of the silicon.
Claim 4
Dependent Claim
18 words
A semiconductor pressure transducer assembly as claimed in claim 2, wherein said covering member is composed of glass.
Claim 5
Dependent Claim
19 words
A semiconductor pressure transducer assembly as claimed in claim 3, wherein said covering member is composed of borosilicate glass.
Claim 6
Dependent Claim
26 words
A semiconductor pressure transducer assembly as claimed in claim 1, wherein said conductor layer is silicon deposited on the passivating layer of said silicon diaphragm assembly.
Claim 7
Dependent Claim
19 words
A semiconductor pressure transducer assembly as claimed in claim 1, wherein said passivating layer is composed of silicon dioxide.
Claim 8
Dependent Claim
29 words
A semiconductor pressure transducer assembly as claimed in claim 1, wherein said covering member includes a well formed therein and shaping a chamber together with said silicon diaphragm assembly.
Claim 9
Dependent Claim
44 words
A semiconductor pressure transducer assembly as claimed in claim 1, wherein a pipe like member of glass is bonded on the bottom surface of said silicon diaphragm assembly, thereby, shaping a chamber in which a gas having a pressure to be detected is introduced.
Claim 10
Dependent Claim
43 words
A semiconductor pressure transducer assembly as claimed in claim 1, plural piercing holes are formed on said covering member at the positions corresponding to said conducting paths of said silicon diaphragm assembly, and electrodes are constructed on the holes of said covering member.
Claim 11
Dependent Claim
48 words
A semiconductor pressure transducer assembly as claimed in claim 1, wherein at least one of said conducting paths is diffused on said silicon diaphragm assembly to extend beyond outer edges of said covering member, and wherein an electrode is constructed on the extending portion of said conducting path.
Claim 12
Dependent Claim
79 words
A semiconductor pressure transducer assembly as claimed in claim 1, said anodic bonding comprises steps of piling up said silicon diaphragm assembly and said insulating covering member, heating the piled silicon assembly and covering member up to a certain temperature, and applying a voltage for a predetermined period across the piled silicon assembly and covering member with applying the positive voltage to the conductive layer on said silicon diaphragm assembly and the negative voltage to said insulating covering member.
Claim 13
Independent Claim
140 words
A method for forming a semiconductor pressure transducer assembly comprising the steps of: (1) forming a pressure sensitive silicon diaphragm; (2) diffusing at least one piezoresistive element on the pressure sensitive diaphragm, the resistance value of the piezoresistive element varying depending upon strain appearing in the diaphragm; (3) diffusing a conducting path on said silicon diaphragm to provide an electrical connection for said at least one piezoresistive element; (4) forming a passivating layer covering a surface of said silicon diaphragm on which the at least one piezoresistive element and said conductive path are diffused; (5) providing a layer of conductor on the passivating layer, to form a silicon diaphragm assembly; (6) mounting a covering member of insulating material on the conductor layer of said silicon diaphragm assembly; and (7) bonding said covering member to said conductor layer by Anodic Bonding.
Claim 14
Independent Claim
140 words
A method for forming a semiconductor pressure transducer assembly comprising the steps of: (1) forming a pressure sensitive silicon diaphragm; (2) diffusing at least one piezoresistive element on the pressure sensitive diaphragm, the resistance value of the piezoresistive element varying depending upon strain appearing in the diaphragm; (3) diffusing a conducting path on said silicon diaphragm to provide an electrical connection for said at least one piezoresistive element; (4) forming a passivating layer covering a surface of said silicon diaphragm on which the at least one piezoresistive element and said conductive path are diffused; (5) providing a layer of conductor on the passivating layer, to form a silicon diaphragm assembly; (6) mounting a covering member of insulating material on the conductor layer of said silicon diaphragm assembly; and (7) bonding said covering member to said conductor layer by Anodic Bonding.
Claim 15
Dependent Claim
23 words
A method as claimed in claim 12, wherein said covering member is formed of glass and the conductor layer is formed of silicon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-10-12 | 1985-04-13 | 1985-10-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-10-12 | 1989-04-13 | 1989-10-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-10-12 | 1993-04-13 | 1993-10-13 | $7700.00 | Window Closed / Lapsed |