Semiconductor fiber optical detection

Claim 2

A coupler for converting light signals transmitted by an optical fiber to electrical signals wherein the optical path in said coupler is longer than the length dimension of said coupler comprising in combination: a coupler body of semiconductor material having a length dimension governed by the optical absorption coefficient of said semiconductor material and the wave length of said light signals and having width and height dimensions less than said length dimension; a region of p conductivity type along a first side of said body essentially parallel to said length dimension and having an external electrical connection; a region of n conductivity type along a second side of said body opposite to said first side and having an external electrical connection; internal reflection means on each of the remaining sides of said body that are essentially parallel to said length dimension; and alignment means positioning the end of an optical fiber adjacent one end of said body with the axis of said optical fiber parallel with said length dimension of said body.

Claim 3

The coupler of claim 1 wherein said l dimension is governed by the optical absorption coefficient of the semiconductor material of said body and the wavelength of said transmitted light signals.

Claim 4

The coupler of claim 2 wherein said semiconductor material is silicon.

Claim 5

A semiconductor optical detector for a silica-based optical fiber having a diameter of the order of the width and thickness of said detector and wherein there is propagated light signals of a wavelength in the vicinity of 0.5 to 2 microns comprising in combination: a body of semiconductor material having a length dimension governed by the optical absorption coefficient of said semiconductor material and the wavelength of said propagated light signals; alignment means positioning the end of said optical fiber adjacent to one end of said semiconductor body with the axis of said optical fiber parallel with said length dimension of said semiconductor body; an antireflecting coating on the end of said semiconductor body adjacent said optical fiber, said semiconductor body having parallel to said length dimension thereof respectively a p region and an n region separated from each other, an electrical contact to said p and said n region and a reflecting member electrically independent of said p region and said n region and over said semiconductor body.

Claim 6

A semiconductor optical detector for a silica-based optical fiber having a diameter of the order of the width and thickness of said detector and wherein there is propagated light signals of a wavelength in the vicinity of 0.5 to 2 microns comprising in combination: a body of semiconductor material having a length dimension governed by the optical absorption coefficient of said semiconductor material and the wavelength of said propagated light signals; alignment means positioning the end of said optical fiber adjacent to one end of said semiconductor body with the axis of said optical fiber parallel with said length dimension of said semiconductor body; an antireflecting coating on the end of said semiconductor body adjacent said optical fiber, said semiconductor body having parallel to said length dimension thereof respectively a p region and an n region separated from each other, an electrical contact to said p and said n region and a reflecting member electrically independent of said p region and said n region and over said semiconductor body.

Claim 7

The detector of claim 4 wherein said semicondcutor material is silicon.

Claim 8

The process of fabricating a semiconductor body for optical fiber signal detection purposes comprising in combination the steps of: providing a semiconductor crystal member having broad area first and second surfaces separated by a region having a thickness corresponding to a vertical dimension of said body, said crystal member being oriented so that the fast etch rate crystallographic plane is perpendicular to said first surface; applying an etch resist on said first surface in a rectangular pattern to define the length and width dimensions of said body; etching said crystal member forming thereby said semiconductor detector body having a shape that slopes away from said etch resist along a slower etch rate crystallographic plane along both sides and along at least one optical fiber signal receiving end; forming p and n conductivity type regions along respectively each sloping side; providing an ohmic contact each to said p and n regions; and providing optical fiber retention means aligning the axis of an optical fiber with said optical fiber signal receiving end of said body.

Claim 9

The process of fabricating a semiconductor body for optical fiber signal detection purposes comprising in combination the steps of: providing a semiconductor crystal member having broad area first and second surfaces separated by a region having a thickness corresponding to a vertical dimension of said body, said crystal member being oriented so that the fast etch rate crystallographic plane is perpendicular to said first surface; applying an etch resist on said first surface in a rectangular pattern to define the length and width dimensions of said body; etching said crystal member forming thereby said semiconductor detector body having a shape that slopes away from said etch resist along a slower etch rate crystallographic plane along both sides and along at least one optical fiber signal receiving end; forming p and n conductivity type regions along respectively each sloping side; providing an ohmic contact each to said p and n regions; and providing optical fiber retention means aligning the axis of an optical fiber with said optical fiber signal receiving end of said body.

Claim 10

The process of claim 6 wherein said optical fiber retention means is the groove between identical bodies in an adjacent row having each intersection between pairs of members in the adjacent row aligned with the centerline of a detector body.

Claim 11

The process of claim 6 wherein said semiconductor crystal member is silicon, said fast etch rate crystallographic plane is 100 and said slow crystallographic plane is 111.