Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
273 words
A layered inorganic photosensitive device which comprises (a) a substrate; (b) a layer of hole injecting material capable of injecting holes, this layer being comprised of trigonal selenium, the hole injecting layer having a thickness of from about 0.5 microns to about 10 microns; (c) a hole transport layer in operative contact with the hole injecting layer, this layer being comprised of a halogen doped selenium arsenic alloy, where in the percentage by weight of selenium present is from about 99.5 percent to about 99.9 percent, the percentage by weight of arsenic present is from about 0.1 percent to about 0.5 percent, and the halogen is present in an amount of from about 10 parts per million, to about 200 parts per million, the hole transport layer having a thickness of from about 5 microns to about 60 microns; (d) a charge generating layer overcoated on the hole transport layer comprised of an inorganic photoconductive material, the charge generating layer having a thickness of from about 0.1 microns to about 5 microns; (e) a hole trapping layer contained on the generating material, the hole trapping layer being comprised of a halogen doped selenium arsenic alloy wherein the amount of selenium present by weight ranges from about 95 percent to about 99.9 percent, the amount of arsenic present ranges from about 0.1 percent to about 5 percent, and the amount of halogen present ranges from about 10 parts per million to 200 parts per million, the hole trapping layer having a thickness of from about 0.01 microns about 5 microns, and; (f) a layer of electrically insulating organic resin overlaying the hole trapping layer.
Claim 2
Dependent Claim
273 words
A layered inorganic photosensitive device which comprises (a) a substrate; (b) a layer of hole injecting material capable of injecting holes, this layer being comprised of trigonal selenium, the hole injecting layer having a thickness of from about 0.5 microns to about 10 microns; (c) a hole transport layer in operative contact with the hole injecting layer, this layer being comprised of a halogen doped selenium arsenic alloy, where in the percentage by weight of selenium present is from about 99.5 percent to about 99.9 percent, the percentage by weight of arsenic present is from about 0.1 percent to about 0.5 percent, and the halogen is present in an amount of from about 10 parts per million, to about 200 parts per million, the hole transport layer having a thickness of from about 5 microns to about 60 microns; (d) a charge generating layer overcoated on the hole transport layer comprised of an inorganic photoconductive material, the charge generating layer having a thickness of from about 0.1 microns to about 5 microns; (e) a hole trapping layer contained on the generating material, the hole trapping layer being comprised of a halogen doped selenium arsenic alloy wherein the amount of selenium present by weight ranges from about 95 percent to about 99.9 percent, the amount of arsenic present ranges from about 0.1 percent to about 5 percent, and the amount of halogen present ranges from about 10 parts per million to 200 parts per million, the hole trapping layer having a thickness of from about 0.01 microns about 5 microns, and; (f) a layer of electrically insulating organic resin overlaying the hole trapping layer.
Claim 3
Dependent Claim
87 words
A layered inorganic photosensitive device in accordance with claim 1 wherein the substrate is conductive, the charge generating layer is comprised of a selenium tellurium alloy, the hole trapping layer is comprised of a halogen doped selenium arsenic alloy wherein the amount of selenium present by weight is 99.9 percent, the amount of arsenic present by weight is 0.1 percent, and from about 50 parts per million to about 100 parts per million of the halogen chlorine, and the insulating organic resin overcoating is a polyester material.
Claim 4
Dependent Claim
53 words
A layered inorganic photosensitive device in accordance with claim 1 wherein the substrate is aluminum, the selenium arsenic hole trapping layer is comprised of 99.9 percent selenium and 0.1 percent arsenic, and 50 parts per million to 100 parts per million of halogen, and the insulating organic overcoating resin is a polyurethane material.
Claim 5
Dependent Claim
44 words
A layered inorganic photosensitive device in accordance with claim 1 wherein the thickness of the substrate layer ranges from about 5 mils to about 200 mils, and the thickness of the electrically insulating overcoating resin ranges from about 5 microns to about 25 microns.