US4265991A
Expired / Lapsed
US
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Electrophotographic photosensitive member and process for production thereof
Assignee: Canon Inc
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Filing: 1978-12-19
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Granted: 1981-05-05
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Expires: 1998-12-19
Abstract
Abstract A layer of amorphous silicon containing H, preferably 10-40 atomic %H, is used as a photoconductive layer for electrophotographic photosensitive member.
Inventors
- 👤 Yutaka Hirai
- 👤 Toshiyuki Komatsu
- 👤 Katsumi Nakagawa
- 👤 Teruo Misumi
- 👤 Tadaji Fukuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 05:06
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/14; C23C14/16; C23C14/0021; C23C14/0036; C23C14/0057; C23C16/00; C23C16/22; C23C16/24; C23C16/44; C23C16/455; C23C16/45523; C23C16/50; C23C16/505; C23C16/507; C23C16/509; G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08221; G03G5/08228; G03G5/08235; G03G5/08242; G03G5/08278; H; H10; H10F; H10F30/00; H10F30/10; H10F30/15; H10F71/00; H10F71/10; H10F71/103; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
54 words
An electrophotographic photosensitive member comprising a substrate for electrophotography and a photoconductive layer, said photoconductive layer being formed of amorphous silicon by utilizing electric discharge, containing 10-40 atomic percent of hydrogen and being 5-80 microns in thickness, and said photoconductive layer having a high dark resistance and a high SN ratio for electrophotographic processing.
Claim 2
Dependent Claim
54 words
An electrophotographic photosensitive member comprising a substrate for electrophotography and a photoconductive layer, said photoconductive layer being formed of amorphous silicon by utilizing electric discharge, containing 10-40 atomic percent of hydrogen and being 5-80 microns in thickness, and said photoconductive layer having a high dark resistance and a high SN ratio for electrophotographic processing.
Claim 3
Dependent Claim
35 words
An electrophotographic photosensitive member according to claim 1, in which said photoconductive layer is doped with 10 -6 -10 -3 atomic percent of an element of Group IIIA of the Periodic Table as an impurity.
Claim 4
Dependent Claim
28 words
An electrophotographic photosensitive member according to claim 2, in which said element of Group IIIA of the Periodic Table is selected from B, Al, Ga, In and Tl.
Claim 5
Dependent Claim
35 words
An electrophotographic photosensitive member according to claim 1, in which said photoconductive layer is doped with 10 -8 -10 -5 atomic percent of an element of Group VA of the Periodic Table as an impurity.
Claim 6
Dependent Claim
28 words
An electrophotographic photosensitive member according to claim 4, in which said element of Group VA of the Periodic Table is selected from N, P, As, Sb and Bi.
Claim 7
Dependent Claim
29 words
An electrophotographic photosensitive member according to claim 1, further comprising an antireflection layer overlying the surface of said photoconductive layer, said antireflection layer being 50-100 milli microns in thickness.
Claim 8
Dependent Claim
18 words
An electrophotographic photosensitive member according to claim 1, in which said substrate is in a shape of cylinder.
Claim 9
Dependent Claim
82 words
An electrophotographic photosensitive member comprising a substrate for electrophotography, a barrier layer capable of preventing injection of electric carrier from said substrate side when the charging treatment is applied to said photosensitive member, and a photoconductive layer overlying said barrier layer, said photoconductive layer being formed of amorphous silicon by utilizing electric discharge, containing 10-40 atomic percent of hydrogen and being 5-80 microns in thickness, and said photoconductive layer having a high dark resistance and a high SN ratio for electrophotographic processing.
Claim 10
Dependent Claim
82 words
An electrophotographic photosensitive member comprising a substrate for electrophotography, a barrier layer capable of preventing injection of electric carrier from said substrate side when the charging treatment is applied to said photosensitive member, and a photoconductive layer overlying said barrier layer, said photoconductive layer being formed of amorphous silicon by utilizing electric discharge, containing 10-40 atomic percent of hydrogen and being 5-80 microns in thickness, and said photoconductive layer having a high dark resistance and a high SN ratio for electrophotographic processing.
Claim 11
Dependent Claim
35 words
An electrophotographic photosensitive member according to claim 8, in which said photoconductive layer is doped with 10 -6 -10 -3 atomic percent of an element of Group IIIA of the Periodic Table as an impurity.
Claim 12
Dependent Claim
28 words
An electrophotographic photosensitive member according to claim 9, in which said element of Group IIIA of the Periodic Table is selected from B, Al, Ga, In and Tl.
Claim 13
Dependent Claim
35 words
An electrophotographic photosensitive member according to claim 8, in which said photoconductive layer is doped with 10 -8 -10 -5 atomic percent of an element of Group VA of the Periodic Table as an impurity.
Claim 14
Dependent Claim
28 words
An electrophotographic photosensitive member according to claim 11, in which said element of Group VA of the Periodic Table is selected from N, P, As, Sb and Bi.
Claim 15
Dependent Claim
29 words
An electrophotographic photosensitive member according to claim 8, further comprising an antireflection layer overlying the surface of said photoconductive layer, said antireflection layer being 50-100 milli microns in thickness.
Claim 16
Dependent Claim
18 words
An electrophotographic photosensitive member according to claim 9, in which said substrate is in a shape of cylinder.
Claim 17
Dependent Claim
72 words
An electrophotographic photosensitive member comprising a substrate for electrophotography, a photoconductive layer, said photoconductive layer being formed of amorphous silicon by utilizing electric discharge, containing 10-40 atomic percent of hydrogen and being 5-80 microns in thickness, said photoconductive layer also having a high dark resistance and a high SN ratio for electrophotographic processing, and a covering layer overlying the surface of said photoconductive layer, said covering layer being 0.5-70 microns in thickness.
Claim 18
Dependent Claim
72 words
An electrophotographic photosensitive member comprising a substrate for electrophotography, a photoconductive layer, said photoconductive layer being formed of amorphous silicon by utilizing electric discharge, containing 10-40 atomic percent of hydrogen and being 5-80 microns in thickness, said photoconductive layer also having a high dark resistance and a high SN ratio for electrophotographic processing, and a covering layer overlying the surface of said photoconductive layer, said covering layer being 0.5-70 microns in thickness.
Claim 19
Dependent Claim
35 words
An electrophotographic photosensitve member according to claim 15, in which said photoconductive layer is doped with 10 -6 -10 -3 atomic percent of an element of Group IIIA of the Periodic Table as an impurity.
Claim 20
Dependent Claim
28 words
An electrophotograpic photosensitive member according to claim 16, in which said element of Group IIIA of the Periodic Table is selected from B, Al, Ga, In and Tl.
Claim 21
Dependent Claim
35 words
An electrophotographic photosensitive member according to claim 15, in which said photoconductive layer is doped with 10 -8 -10 -5 atomic percent of an element of Group VA of the Periodic Table as an impurity.
Claim 22
Dependent Claim
28 words
An electrophotographic photosensitive member according to claim 18, in which said element of Group VA of the Periodic Table is selected from N, P, As, Sb and Bi.
Claim 23
Dependent Claim
18 words
An electrophotographic photosensitive member according to claim 15, in which said substrate is in a shape of cylinder.
References Cited (Backward Citations)
GB796398A
Cited
GB939095A
Cited
GB1104935A
Cited
GB1125444A
Cited
US3691104A
Cited
US3617354A
Cited
GB1332702A
Cited
GB1459839A
Cited
US4059461A
Cited
US4162505A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1984-05-04 | 1984-11-03 | 1985-05-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-05-04 | 1988-11-03 | 1989-05-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-05-04 | 1992-11-03 | 1993-05-05 | $7700.00 | Window Closed / Lapsed |